GS66508T-E02-MR

GS66508T-E02-MR
Mfr. #:
GS66508T-E02-MR
制造商:
GaN Systems
描述:
MOSFET 650V 30A E-Mode GaN
生命周期:
制造商新产品。
数据表:
GS66508T-E02-MR 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
GS66508T-E02-MR 更多信息
产品属性
属性值
制造商
氮化镓系统
产品分类
晶体管 - FET、MOSFET - 单
打包
卷轴
安装方式
贴片/贴片
技术
氮化镓
通道数
1 Channel
配置
单身的
最高工作温度
+ 150 C
最低工作温度
- 55 C
VGS-栅极-源极-电压
10 V
Vds-漏-源-击穿电压
650 V
VGS-th-Gate-Source-Threshold-Voltage
1.6 V
Rds-On-Drain-Source-Resistance
55 mOhms
晶体管极性
N通道
Qg-门电荷
6.5 nC
通道模式
增强
Tags
GS66508T, GS66508, GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
型号 制造商 描述 库存 价格
GS66508T-E02-MR
DISTI # 499-GS66508T-E02-MR
GaN SystemsMOSFET 650V 30A E-Mode GaN
RoHS: Compliant
3144
  • 1:$16.2500
  • 10:$15.7300
  • 25:$14.9900
  • 250:$13.9200
GS66508T-E02-MR
DISTI # GS66508T-E02-MR
GaN SystemsGAN POWER TRANSISTOR
RoHS: Compliant
750
  • 250:$12.9800
图片 型号 描述
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

MOSFET 650V 30A E-Mode GaN
GS66508P-E05-MR

Mfr.#: GS66508P-E05-MR

OMO.#: OMO-GS66508P-E05-MR

MOSFET 650V 30A E-Mode GaN
GS66508B-EVBDB

Mfr.#: GS66508B-EVBDB

OMO.#: OMO-GS66508B-EVBDB-1190

Power Management IC Development Tools GS66508B Half Bridge Daughter Board
GS66508P-E05-MR

Mfr.#: GS66508P-E05-MR

OMO.#: OMO-GS66508P-E05-MR-1190

MOSFET 650V 30A E-Mode GaN
GS66508T-E02

Mfr.#: GS66508T-E02

OMO.#: OMO-GS66508T-E02-1190

全新原装
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR-1190

MOSFET 650V 30A E-Mode GaN
GS66508P-E05-TY

Mfr.#: GS66508P-E05-TY

OMO.#: OMO-GS66508P-E05-TY-128

MOSFET 650V 30A E-Mode GaN Preproduction Units
GS66508P-E04-TY

Mfr.#: GS66508P-E04-TY

OMO.#: OMO-GS66508P-E04-TY-128

MOSFET 650V 30A E-Mode GaN Preproduction Units
GS66508T-E01-TY

Mfr.#: GS66508T-E01-TY

OMO.#: OMO-GS66508T-E01-TY-128

MOSFET Top cooled 650V GaN Transisto
可用性
库存:
Available
订购:
2500
输入数量:
GS66508T-E02-MR的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$19.47
US$19.47
10
US$18.50
US$184.96
100
US$17.52
US$1 752.30
500
US$16.55
US$8 274.75
1000
US$15.58
US$15 576.00
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