SI8489EDB-T2-E1

Name: Vishay - SI8489EDB-T2-E1
Brand: Vishay
SKU: OMO-2826759
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI8489EDB-T2-E1
制造商:: Vishay
描述:: IGBT Transistors MOSFET -20V 44mOhm@10V 5.4A P-Ch G-III
生命周期:: 制造商新产品。
数据表:: SI8489EDB-T2-E1 数据表
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更多信息:: SI8489EDB-T2-E1 更多信息

产品属性
属性值

制造商: 威世硅

产品分类: FET - 单

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

安装方式: 贴片/贴片

商品名: MICROFOOT TrenchFET

包装盒: 4-UFBGA

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: 4-Microfoot

配置: 单身的

FET型: MOSFET P 沟道，金属氧化物

最大功率: 780mW

晶体管型: 1 P-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: 765pF @ 10V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: -

Rds-On-Max-Id-Vgs: 44 mOhm @ 1.5A, 10V

Vgs-th-Max-Id: 1.2V @ 250μA

栅极电荷-Qg-Vgs: 27nC @ 10V

钯功耗: 900 mW

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 25 ns

上升时间: 20 ns

VGS-栅极-源极-电压: 12 V

Id 连续漏极电流: - 700 mA

Vds-漏-源-击穿电压: - 20 V

VGS-th-Gate-Source-Threshold-Voltage: - 0.5 V to - 1.2 V

Rds-On-Drain-Source-Resistance: 44 mOhms

晶体管极性: P-通道

典型关断延迟时间: 50 ns

典型开启延迟时间: 27 ns

Qg-门电荷: 9.5 nC

正向跨导最小值: 10 S

Tags: SI848, SI84, SI8

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

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Packaging Boxes

SI8489EDB-T2-E1 描述

***ied Electronics & Automation: SI8489EDB-T2-E1 P-channel MOSFET Transistor; 4.3 A; 20 V; 4-Pin MICRO FOOT

***et: Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R

***ronik: P-CH 20V 5,4A 36mOhm MICROFOOT

SI8489EDB-T2-E1 更多信息

MicroFoot® Power MOSFETs: Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

型号	制造商	描述	库存	价格
SI8489EDB-T2-E1 DISTI # V72:2272_09216538	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R RoHS: Compliant	4770	3000:$0.1492 1000:$0.1535 500:$0.1906 250:$0.2240 100:$0.2266 25:$0.2848 10:$0.2883 1:$0.3521
SI8489EDB-T2-E1 DISTI # SI8489EDB-T2-E1TR-ND	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.1749
SI8489EDB-T2-E1 DISTI # SI8489EDB-T2-E1CT-ND	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.1976 500:$0.2557 100:$0.3487 10:$0.4650 1:$0.5500
SI8489EDB-T2-E1 DISTI # SI8489EDB-T2-E1DKR-ND	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.1976 500:$0.2557 100:$0.3487 10:$0.4650 1:$0.5500
SI8489EDB-T2-E1 DISTI # 30195830	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R RoHS: Compliant	4770	3000:$0.1492 1000:$0.1535 500:$0.1906 250:$0.2240 100:$0.2266 49:$0.2848
SI8489EDB-T2-E1 DISTI # SI8489EDB-T2-E1	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8489EDB-T2-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1489 6000:$0.1439 12000:$0.1389 18000:$0.1349 30000:$0.1309
SI8489EDB-T2-E1 DISTI # 70617010	Vishay Siliconix	SI8489EDB-T2-E1 P-channel MOSFET Transistor,4.3 A,20 V,4-Pin MICRO FOOT RoHS: Compliant	0	300:$0.2900 600:$0.2600 1500:$0.2300 3000:$0.2100
SI8489EDB-T2-E1 DISTI # 78-SI8489EDB-T2-E1	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs MICRO FOOT 1 x 1 RoHS: Compliant	12622	1:$0.4900 10:$0.3710 100:$0.2750 500:$0.2260 1000:$0.1750 3000:$0.1710
SI8489EDB-T2-E1 DISTI # 8181438P	Vishay Intertechnologies	TRANS MOSFET P-CH 20V 5.4A, RL	2940	60:£0.2550 200:£0.2440 400:£0.2220 800:£0.2010
SI8489EDB-T2-E1 DISTI # C1S803604064229	Vishay Intertechnologies	MOSFETs	4770	250:$0.2240 100:$0.2266 25:$0.2848 10:$0.2883
SI8489EDB-T2-E1	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs MICRO FOOT 1 x 1 RoHS: Compliant	Americas - 6000

SI8489EDB-T2-E1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes