BSC030N08NS5ATMA1

Mfr. #:: BSC030N08NS5ATMA1
制造商:: Infineon Technologies
描述:: MOSFET N-Ch 80V 100A
生命周期:: 制造商新产品。
数据表:: BSC030N08NS5ATMA1 数据表
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更多信息:: BSC030N08NS5ATMA1 更多信息

产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

打包: 卷轴

部分别名: BSC030N08NS5 SP001077098

单位重量: 0.017870 oz

安装方式: 贴片/贴片

包装盒: TDSON-8

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 139 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 13 ns

上升时间: 12 ns

VGS-栅极-源极-电压: +/- 20 V

Id 连续漏极电流: 100 A

Vds-漏-源-击穿电压: 80 V

VGS-th-Gate-Source-Threshold-Voltage: 2.2 V

Rds-On-Drain-Source-Resistance: 4.5 mOhms

晶体管极性: N通道

典型关断延迟时间: 43 ns

典型开启延迟时间: 20 ns

Qg-门电荷: 61 nC

正向跨导最小值: 55 S

通道模式: 增强

Tags: BSC030N0, BSC030N, BSC030, BSC03, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC030N08NS5ATMA1 描述

***ure Electronics: Single N-Channel 80 V 3 mOhm 61 nC OptiMOS Power Mosfet - TDSON-8

***ark: Mosfet, N-Ch, 80V, 100A, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0026Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

BSC030N08NS5ATMA1 更多信息

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Market price

型号	制造商	描述	库存	价格
BSC030N08NS5ATMA1 DISTI # V72:2272_06378848	Infineon Technologies AG	Trans MOSFET N-CH 80V 100A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	587	500:$0.8286 250:$1.1693 100:$1.1822 25:$1.3817 10:$1.4325 1:$1.6386
BSC030N08NS5ATMA1 DISTI # BSC030N08NS5ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 100A 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4688In Stock	1000:$1.1295 500:$1.3632 100:$1.7526 10:$2.1810 1:$2.4100
BSC030N08NS5ATMA1 DISTI # BSC030N08NS5ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 100A 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4688In Stock	1000:$1.1295 500:$1.3632 100:$1.7526 10:$2.1810 1:$2.4100
BSC030N08NS5ATMA1 DISTI # BSC030N08NS5ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 100A 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.9831
BSC030N08NS5ATMA1 DISTI # 31035271	Infineon Technologies AG	Trans MOSFET N-CH 80V 100A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	587	500:$0.8286 250:$1.1693 100:$1.1822 25:$1.3817 10:$1.4325 9:$1.6386
BSC030N08NS5ATMA1 DISTI # BSC030N08NS5ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC030N08NS5ATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.7919 10000:$0.7629 20000:$0.7359 30000:$0.7109 50000:$0.6979
BSC030N08NS5ATMA1 DISTI # BSC030N08NS5	Infineon Technologies AG	Trans MOSFET N-CH 80V 100A 8-Pin TDSON T/R (Alt: BSC030N08NS5) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 0
BSC030N08NS5ATMA1 DISTI # SP001077098	Infineon Technologies AG	Trans MOSFET N-CH 80V 100A 8-Pin TDSON T/R (Alt: SP001077098) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€1.0069 10000:€0.8389 20000:€0.7749 30000:€0.7189 50000:€0.6709
BSC030N08NS5ATMA1 DISTI # 12AC9442	Infineon Technologies AG	MOSFET, N-CH, 80V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes	3412	1:$2.0300 10:$1.7200 25:$1.6100 50:$1.4900 100:$1.3800 250:$1.3000 500:$1.2100 1000:$0.9970
BSC030N08NS5ATMA1 DISTI # 726-BSC030N08NS5ATMA	Infineon Technologies AG	MOSFET N-Ch 80V 100A RoHS: Compliant	11	1:$2.0300 10:$1.7200 100:$1.3800 500:$1.2100 1000:$0.9970 2500:$0.9290 5000:$0.8940
BSC030N08NS5ATMA1 DISTI # 2709870	Infineon Technologies AG	MOSFET, N-CH, 80V, 100A, TDSON RoHS: Compliant	3412	1:$3.8200 10:$3.4600 100:$2.7800
BSC030N08NS5ATMA1 DISTI # 2709870	Infineon Technologies AG	MOSFET, N-CH, 80V, 100A, TDSON RoHS: Compliant	3806	1:£1.7700 10:£1.2400 100:£1.0500 250:£0.9880 500:£0.9260
BSC030N08NS5ATMA1 DISTI # C1S322000456314	Infineon Technologies AG	MOSFETs	587	250:$1.1693 100:$1.1822 25:$1.3817 10:$1.4325

图片	型号	描述
	Mfr.#: BSC030N04NS G OMO.#: OMO-BSC030N04NS-G	MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC030N04NSGXT OMO.#: OMO-BSC030N04NSGXT	MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC030N03LSG OMO.#: OMO-BSC030N03LSG-1190	Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSC030N03LSGATMA1 OMO.#: OMO-BSC030N03LSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 100A TDSON-8
	Mfr.#: BSC030N03MS OMO.#: OMO-BSC030N03MS-1190	全新原装
	Mfr.#: BSC030N03MS G OMO.#: OMO-BSC030N03MS-G-1190	Trans MOSFET N-CH 30V 21A 8-Pin TDSON EP
	Mfr.#: BSC030N03MSG OMO.#: OMO-BSC030N03MSG-1190	全新原装
	Mfr.#: BSC030N04NS OMO.#: OMO-BSC030N04NS-1190	全新原装
	Mfr.#: BSC030N04NSGATMA1 OMO.#: OMO-BSC030N04NSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 40V 100A TDSON-8
	Mfr.#: BSC030N08NS5 OMO.#: OMO-BSC030N08NS5-1190	Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP

BSC030N08NS5ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes