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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| BSC882N03LSGATMA1 DISTI # BSC882N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC882N03LSGATMA1 DISTI # BSC882N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC882N03LSGATMA1 DISTI # BSC882N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSC882N03LSGATMA1 DISTI # V36:1790_06384706 | Infineon Technologies AG | OPTIMOS 3 M-SERIES POWER-MOSFET RoHS: Compliant | 0 |
|
| BSC882N03LSGATMA1 DISTI # BSC882N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 34V 100A 8-Pin TDSON - Tape and Reel (Alt: BSC882N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC882N03LSGATMA1 DISTI # SP000686916 | Infineon Technologies AG | Trans MOSFET N-CH 34V 100A 8-Pin TDSON (Alt: SP000686916) RoHS: Compliant Min Qty: 5000 | Europe - 0 |
|
| BSC882N03LSGATMA1 DISTI # 68AC4409 | Infineon Technologies AG | TRANSITIONAL MOSFETS,Transistor Polarity:N Channel,Drain Source Voltage Vds:34V,On Resistance Rds(on):4.2mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power Dissipation Pd:-,Transistor Case Style:-,No. of RoHS Compliant: Yes | 5000 |
|
| BSC882N03LS G DISTI # 726-BSC882N03LSG | Infineon Technologies AG | MOSFET N-Ch 34V 100A SON-8 RoHS: Compliant | 4998 |
|
| BSC882N03LSGATMA1 | Infineon Technologies AG | Infineon N-Channel Power MOSFET RoHS: Not Compliant | 5000 |
|
| BSC882N03LSGATMA1 DISTI # 2781055 | Infineon Technologies AG | TRANSITIONAL MOSFETS RoHS: Compliant | 5000 |
|
| BSC882N03LSGATMA1 DISTI # 2781055 | Infineon Technologies AG | TRANSITIONAL MOSFETS | 5000 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: BSC882N03LS G OMO.#: OMO-BSC882N03LS-G |
MOSFET N-Ch 34V 100A SON-8 |
|
Mfr.#: BSC882N03LS OMO.#: OMO-BSC882N03LS-1190 |
全新原装 |
|
|
Mfr.#: BSC882N03LSG OMO.#: OMO-BSC882N03LSG-1190 |
Trans MOSFET N-CH 34V 100A 8-Pin TDSON (Alt: BSC882N03LS G) |
|
|
Mfr.#: BSC882N03MS OMO.#: OMO-BSC882N03MS-1190 |
全新原装 |
|
|
Mfr.#: BSC882N03MS G OMO.#: OMO-BSC882N03MS-G-1190 |
MOSFET N-Ch 30V 22A TDSON-8 |
|
|
Mfr.#: BSC882N03MSG OMO.#: OMO-BSC882N03MSG-1190 |
Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC882N03MSGATMA1 |
MOSFET N-CH 34V 22A TDSON-8 |
|
|
Mfr.#: BSC882N03MSGXT OMO.#: OMO-BSC882N03MSGXT-1190 |
全新原装 |
|
|
Mfr.#: BSC882N03LSGATMA1 |
MOSFET N-CH TDSON-8 |
|
|
Mfr.#: BSC882N03LS G OMO.#: OMO-BSC882N03LS-G-317 |
RF Bipolar Transistors MOSFET N-Ch 34V 100A SON-8 |
