IPB60R199CP

IPB60R199CP
Mfr. #:
IPB60R199CP
制造商:
Infineon Technologies
描述:
Trans MOSFET N-CH 650V 16A 3-Pin TO-263 T/R (Alt: IPB60R199CP)
生命周期:
制造商新产品。
数据表:
IPB60R199CP 数据表
交货:
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ECAD Model:
更多信息:
IPB60R199CP 更多信息
产品属性
属性值
制造商
中频
产品分类
FET - 单
系列
CoolMOS CP
打包
卷轴
部分别名
IPB60R199CPATMA1 IPB60R199CPXT SP000223256
单位重量
0.139332 oz
安装方式
贴片/贴片
商品名
酷摩
包装盒
TO-252-3
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
139 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
5 ns
上升时间
5 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
16 A
Vds-漏-源-击穿电压
650 V
Rds-On-Drain-Source-Resistance
199 mOhms
晶体管极性
N通道
典型关断延迟时间
50 ns
典型开启延迟时间
10 ns
通道模式
增强
Tags
IPB60R199CP, IPB60R199, IPB60R19, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型号 制造商 描述 库存 价格
IPB60R199CPATMA1
DISTI # IPB60R199CPATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 650V 16A TO-263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2In Stock
  • 500:$2.4392
  • 100:$3.0123
  • 10:$3.6730
  • 1:$4.1100
IPB60R199CPATMA1
DISTI # IPB60R199CPATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 650V 16A TO-263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2In Stock
  • 500:$2.4392
  • 100:$3.0123
  • 10:$3.6730
  • 1:$4.1100
IPB60R199CPATMA1
DISTI # IPB60R199CPATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 650V 16A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$1.9972
IPB60R199CPAATMA1
DISTI # IPB60R199CPAATMA1-ND
Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
  • 1000:$2.1791
IPB60R199CP
DISTI # IPB60R199CP
Infineon Technologies AGTrans MOSFET N-CH 650V 16A 3-Pin TO-263 T/R (Alt: IPB60R199CP)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 0
    IPB60R199CP
    DISTI # SP000223256
    Infineon Technologies AGTrans MOSFET N-CH 650V 16A 3-Pin TO-263 T/R (Alt: SP000223256)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 0
    • 1000:€1.6900
    • 2000:€1.6900
    • 4000:€1.5900
    • 6000:€1.4900
    • 10000:€1.3900
    IPB60R199CP
    DISTI # SP000223256
    Infineon Technologies AGTrans MOSFET N-CH 650V 16A 3-Pin TO-263 T/R (Alt: SP000223256)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 0
    • 1000:€2.2900
    • 2000:€1.7900
    • 4000:€1.5900
    • 6000:€1.5900
    • 10000:€1.3900
    IPB60R199CPXT
    DISTI # IPB60R199CPATMA1
    Infineon Technologies AGTrans MOSFET N-CH 650V 16A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R199CPATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 1000:$1.6900
    • 2000:$1.6900
    • 4000:$1.6900
    • 6000:$1.6900
    • 10000:$1.6900
    IPB60R199CPAXT
    DISTI # IPB60R199CPAATMA1
    Infineon Technologies AGTrans MOSFET N-CH 600V 16A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R199CPAATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 1000:$1.9900
    • 2000:$1.8900
    • 4000:$1.7900
    • 6000:$1.7900
    • 10000:$1.6900
    IPB60R199CPAATMA1
    DISTI # SP000539966
    Infineon Technologies AGTrans MOSFET N-CH 600V 16A 3-Pin TO-263 T/R (Alt: SP000539966)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 0
    • 1000:€2.4900
    • 2000:€1.9900
    • 4000:€1.7900
    • 6000:€1.6900
    • 10000:€1.5900
    IPB60R199CPATMA1
    DISTI # 33P7135
    Infineon Technologies AGMOSFET, N CHANNEL, 650V, 16A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes30
    • 1:$3.4400
    • 10:$2.9200
    • 25:$2.7900
    • 50:$2.6600
    • 100:$2.5300
    • 250:$2.4000
    • 500:$2.1600
    IPB60R199CPATMA1.
    DISTI # 27AC6720
    Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:139W,No. of Pins:3Pins RoHS Compliant: Yes0
      IPB60R199CPATMA1
      DISTI # 726-IPB60R199CPATMA1
      Infineon Technologies AGMOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP
      RoHS: Compliant
      0
      • 1:$3.4400
      • 10:$2.9200
      • 100:$2.5300
      • 250:$2.4000
      • 500:$2.1600
      • 1000:$1.8200
      IPB60R199CP
      DISTI # 726-IPB60R199CP
      Infineon Technologies AGMOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP
      RoHS: Compliant
      0
      • 1:$3.4400
      • 10:$2.9200
      • 100:$2.5300
      • 250:$2.4000
      • 500:$2.1600
      • 1000:$1.8200
      • 2000:$1.7300
      IPB60R199CPA
      DISTI # 726-IPB60R199CPA
      Infineon Technologies AGMOSFET N-Ch 600V 16A D2PAK-2 CoolMOS CPA
      RoHS: Compliant
      0
        IPB60R199CPATMA1
        DISTI # 1664018
        Infineon Technologies AGMOSFET, N, TO-263
        RoHS: Compliant
        33
        • 1:£2.9500
        • 10:£2.2300
        • 100:£1.9300
        • 250:£1.8400
        • 500:£1.6600
        IPB60R199CPATMA1
        DISTI # 1664018
        Infineon Technologies AGMOSFET, N, TO-263
        RoHS: Compliant
        30
        • 1:$5.4400
        • 10:$4.6300
        • 100:$4.0100
        • 250:$3.8100
        • 500:$3.4300
        • 1000:$2.8800
        • 2000:$2.7500
        • 5000:$2.6300
        IPB60R199CPInfineon Technologies AG600V,16A,N channel Power MOSFET58
        • 1:$2.8500
        • 100:$2.3800
        • 500:$2.1000
        • 1000:$2.0400
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        IPB60R520CPATMA1

        Mfr.#: IPB60R520CPATMA1

        OMO.#: OMO-IPB60R520CPATMA1-INFINEON-TECHNOLOGIES

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        Mfr.#: IPB60R950C6

        OMO.#: OMO-IPB60R950C6-1190

        MOSFET N-Ch 650V 4.4A D2PAK-2 CoolMOS C6
        IPB60R199CPA

        Mfr.#: IPB60R199CPA

        OMO.#: OMO-IPB60R199CPA-128

        MOSFET N-Ch 600V 16A D2PAK-2 CoolMOS CPA
        可用性
        库存:
        Available
        订购:
        5500
        输入数量:
        IPB60R199CP的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格(美元)
        数量
        单价
        小计金额
        1
        US$2.37
        US$2.37
        10
        US$2.25
        US$22.51
        100
        US$2.13
        US$213.24
        500
        US$2.01
        US$1 006.95
        1000
        US$1.90
        US$1 895.50
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