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BUP213

BUP213
Mfr. #:
BUP213
制造商:
Infineon Technologies
描述:
IGBT Transistors IGBT CHIP NPT TECH 1200V 15A
生命周期:
制造商新产品。
数据表:
BUP213 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BUP213 DatasheetBUP213 Datasheet (P4-P6)BUP213 Datasheet (P7-P8)
ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-220-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
1200 V
最大栅极发射极电压：
20 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
打包：
管子
连续集电极电流 Ic 最大值：
32 A
高度：
9.25 mm
长度：
10 mm
宽度：
4.4 mm
品牌：
英飞凌科技
产品类别：
IGBT晶体管
出厂包装数量：
500
子类别：
IGBT
单位重量：
0.211644 oz
Tags
BUP21, BUP2, BUP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***ark
; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:32A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:200W; Package/Case:TO-220AB ;RoHS Compliant: Yes
***nell
IGBT, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:1200V; Current Ic Continuous a Max:32A; Voltage, Vce Sat Max:2.7V; Power Dissipation:200W; Case Style:TO-220AB; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:64A; Device Marking:BUP213; No. of Pins:3; Pin Format:GCE; Power, Pd:200W; Power, Ptot:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:95ns; Time, Rise:70ns; Transistors, No. of:1
型号 制造商 描述 库存 价格
BUP213
DISTI # BUP213IN-ND		Infineon Technologies AGIGBT 1200V 32A 200W TO220
RoHS: Not compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
    BUP213
    DISTI # 726-BUP213    		Infineon Technologies AGIGBT Transistors IGBT CHIP NPT TECH 1200V 15A
    RoHS: Compliant    		0
      BUP213 E3045A
      DISTI # 726-BUP213E3045A      		Infineon Technologies AGIGBT Transistors IGBT CHIP NPT TECH 1200V 15A
      RoHS: Compliant      		0
        BUP213Infineon Technologies AGInsulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
        RoHS: Not Compliant        		1634
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          可用性
          库存:
          Available
          订购:
          5000
          输入数量:
          BUP213的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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