MJF3055G

MJF3055G
Mfr. #:
MJF3055G
制造商:
ON Semiconductor
描述:
Bipolar Transistors - BJT 10A 90V 30W NPN
生命周期:
制造商新产品。
数据表:
MJF3055G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MJF3055G DatasheetMJF3055G Datasheet (P4-P5)
ECAD Model:
产品属性
属性值
制造商:
安森美半导体
产品分类:
双极晶体管 - BJT
RoHS:
Y
安装方式:
通孔
包装/案例:
TO-220FP-3
晶体管极性:
NPN
配置:
单身的
集电极-发射极电压 VCEO 最大值:
90 V
集电极-基极电压 VCBO:
90 V
发射极基极电压 VEBO:
5 V
集电极-发射极饱和电压:
1 V
最大直流集电极电流:
10 A
增益带宽积 fT:
2 MHz
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
系列:
MJF3055
高度:
9.24 mm
长度:
10.63 mm
打包:
管子
宽度:
4.9 mm
品牌:
安森美半导体
连续集电极电流:
10 A
DC 集电极/基极增益 hfe 最小值:
20
Pd - 功耗:
30 W
产品类别:
BJT - 双极晶体管
出厂包装数量:
50
子类别:
晶体管
单位重量:
0.081130 oz
Tags
MJF30, MJF3, MJF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans GP BJT NPN 90V 10A 2000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
MJF Series 90 V 10 A NPN Complementary Silicon Power Transistor - TO-220FP
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 10A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***ment14 APAC
BIPOLAR Transistor, NPN, 90V TO-220; Tra; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:90V;
***nell
TRANSISTOR, NPN, 90V, 10A, TO-220FP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 90V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 30W; DC Collector Current: 10A; DC Current Gain hFE: 20hFE; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
***r Electronics
Power Bipolar Transistor, 10A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***et
TRANS GP BJT NPN 90V 10A 3PIN TO-220
***el Electronic
RES SMD 83.2K OHM 1% 1/2W 1206
***(Formerly Allied Electronics)
ON Semi D44H11G NPN Bipolar Transistor, 10 A, 80 V, 3-Pin TO-220AB
***Yang
Trans GP BJT NPN 80V 10A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
*** Stop Electro
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***enic
80V 2W 10A 40@4A1V 50MHz 1V@8A400mA NPN -55¡Í~+150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
***trelec
Power Transistor, TO-220, NPN, 80V
***nell
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 70W; DC Collector Current: 10A; DC Current Gain hFE: 60hFE; Transistor Case Styl
***th Star Micro
. . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.
***roFlash
Transistor, Bipolar; Si; NPN; Power; VCEO 80VDC; IC 10A; PD 36W; TO-220; hFE 40; VCEO 80V
***Yang
Trans GP BJT NPN 80V 10A 3-Pin(3+Tab) TO-220 Full-Pak Rail - Rail/Tube
***ure Electronics
MJF Series 80 V 10 A Flange Mount NPN Complementary Power Transistor - TO-220
***r Electronics
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***ponent Sense
Bipolar Transistors - BJT 10A 80V 50W NPN
***ponent Stockers USA
10 A 80 V NPN Si POWER TRANSISTOR TO-220AB
***enic
80V 36W 10A 40@4A1V 50MHz 1V@8A400mA NPN -55¡Í~+150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
***th Star Micro
. . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.
***nell
TRANSISTOR, BIPOL, NPN, 80V, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 36W; DC Collector Current: 10A; DC Current Gain hFE: 40hFE; Transi
型号 制造商 描述 库存 价格
MJF3055G
DISTI # MJF3055GOS-ND
ON SemiconductorTRANS NPN 90V 10A TO220FP
RoHS: Compliant
Min Qty: 1
Container: Tube
1093In Stock
  • 1000:$0.7245
  • 500:$0.9177
  • 100:$1.1109
  • 50:$1.3524
  • 1:$1.5900
MJF3055G
DISTI # MJF3055G
ON SemiconductorTrans GP BJT NPN 90V 10A 3-Pin(3+Tab) TO-220 Full-Pak Rail - Rail/Tube (Alt: MJF3055G)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 1425
  • 1:$1.1849
  • 10:$1.0419
  • 25:$1.0389
  • 50:$1.0359
  • 100:$0.8249
  • 500:$0.7869
  • 1000:$0.6209
MJF3055G
DISTI # 45J1508
ON SemiconductorTrans GP BJT NPN 90V 10A 3-Pin(3+Tab) TO-220 Full-Pak Rail - Bulk (Alt: 45J1508)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 1:$1.5100
  • 10:$1.2900
  • 100:$0.9900
  • 500:$0.8750
  • 1000:$0.6900
  • 2500:$0.6120
  • 10000:$0.5890
MJF3055G
DISTI # 45J1508
ON SemiconductorBIPOLAR TRANSISTOR, NPN, 90V TO-220FP,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:90V,Transition Frequency ft:2MHz,Power Dissipation Pd:30W,DC Collector Current:10A,DC Current Gain hFE:20hFE,No. of Pins:3Pins RoHS Compliant: Yes503
  • 1:$0.5120
  • 10:$0.5120
  • 100:$0.5120
  • 500:$0.5120
  • 1000:$0.5120
  • 2500:$0.5120
  • 10000:$0.5120
MJF3055G.
DISTI # 27AC8986
ON SemiconductorBIP T0220FP NPN 10A 60V ROHS COMPLIANT: YES1425
  • 10000:$0.5890
  • 2500:$0.6120
  • 1000:$0.6900
  • 500:$0.8750
  • 100:$0.9900
  • 10:$1.2900
  • 1:$1.5100
MJF3055G
DISTI # 863-MJF3055G
ON SemiconductorBipolar Transistors - BJT 10A 90V 30W NPN
RoHS: Compliant
1121
  • 1:$1.5100
  • 10:$1.2900
  • 100:$0.9900
  • 500:$0.8750
  • 1000:$0.6900
  • 2500:$0.6120
  • 10000:$0.5890
MJF3055
DISTI # 863-MJF3055
ON SemiconductorBipolar Transistors - BJT 10A 90V 30W NPN
RoHS: Not compliant
0
    MJF3055GON Semiconductor 
    RoHS: Compliant
    Europe - 7612
      MJF3055G.
      DISTI # 1364622
      ON Semiconductor 
      RoHS: Compliant
      503
      • 10000:$0.9330
      • 2500:$0.9690
      • 1000:$1.1000
      • 500:$1.3900
      • 100:$1.5700
      • 10:$2.0400
      • 1:$2.4000
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      可用性
      库存:
      747
      订购:
      2730
      输入数量:
      MJF3055G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$1.58
      US$1.58
      10
      US$1.35
      US$13.50
      100
      US$1.08
      US$108.00
      500
      US$0.94
      US$472.50
      1000
      US$0.78
      US$782.00
      2500
      US$0.73
      US$1 822.50
      5000
      US$0.70
      US$3 510.00
      10000
      US$0.68
      US$6 750.00
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