SIA810DJ-T1-GE3

SIA810DJ-T1-GE3
Mfr. #:
SIA810DJ-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3
生命周期:
制造商新产品。
数据表:
SIA810DJ-T1-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA810DJ-T1-GE3 DatasheetSIA810DJ-T1-GE3 Datasheet (P4-P6)SIA810DJ-T1-GE3 Datasheet (P7-P9)SIA810DJ-T1-GE3 Datasheet (P10)
ECAD Model:
产品属性
属性值
制造商:
威世
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
PowerPAK-SC70-6
商品名:
沟槽场效应晶体管
打包:
卷轴
高度:
0.75 mm
长度:
2.05 mm
系列:
新航
宽度:
2.05 mm
品牌:
威世 / Siliconix
产品类别:
MOSFET
出厂包装数量:
3000
子类别:
MOSFET
第 # 部分别名:
SIA810DJ-GE3
单位重量:
0.000988 oz
Tags
SIA81, SIA8, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
***i-Key
MOSFET N-CH 20V 4.5A SC70-6
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:4500mA; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.077ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:1V; Power Dissipation, Pd:1.9W ;RoHS Compliant: Yes
型号 制造商 描述 库存 价格
SIA810DJ-T1-GE3
DISTI # SIA810DJ-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.4158
SIA810DJ-T1-GE3
DISTI # SIA810DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA810DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.3929
  • 6000:$0.3809
  • 12000:$0.3649
  • 18000:$0.3549
  • 30000:$0.3459
SIA810DJ-T1-GE3
DISTI # 781-SIA810DJ-T1-GE3
Vishay IntertechnologiesMOSFET 20V 4.5A 6.5W 53mohm @ 4.5V
RoHS: Compliant
0
    图片 型号 描述
    SIA810DJ-T1-GE3

    Mfr.#: SIA810DJ-T1-GE3

    OMO.#: OMO-SIA810DJ-T1-GE3

    MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3
    SIA810DJ-T1-E3

    Mfr.#: SIA810DJ-T1-E3

    OMO.#: OMO-SIA810DJ-T1-E3

    MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3
    SIA810DJ-T1-GE3

    Mfr.#: SIA810DJ-T1-GE3

    OMO.#: OMO-SIA810DJ-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 20V 4.5A 6.5W 53mohm @ 4.5V
    SIA810DJ-T1-E3

    Mfr.#: SIA810DJ-T1-E3

    OMO.#: OMO-SIA810DJ-T1-E3-VISHAY

    MOSFET N-CH 20V 4.5A SC-70-6
    可用性
    库存:
    Available
    订购:
    5500
    输入数量:
    SIA810DJ-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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