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IXTH6N120

IXTH6N120
Mfr. #:
IXTH6N120
制造商:
Littelfuse
描述:
MOSFET 6 Amps 1200V 2.700 Rds
生命周期:
制造商新产品。
数据表:
IXTH6N120 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
IXYS
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-247-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
1.2 kV
Id - 连续漏极电流：
6 A
Rds On - 漏源电阻：
2.4 Ohms
Vgs - 栅源电压：
20 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
300 W
配置：
单身的
频道模式：
增强
打包：
管子
高度：
21.46 mm
长度：
16.26 mm
系列：
IXTH6N120
晶体管类型：
1 N-Channel
宽度：
5.3 mm
品牌：
IXYS
秋季时间：
18 ns
产品类别：
MOSFET
上升时间：
33 ns
出厂包装数量：
30
子类别：
MOSFET
典型关断延迟时间：
42 ns
典型的开启延迟时间：
28 ns
单位重量：
0.229281 oz
Tags
IXTH6N1, IXTH6N, IXTH6, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 1200 V 700 mOhm 300 W Power Mosfet - TO-247 AD
***ical
Trans MOSFET N-CH Si 1.2KV 6A 3-Pin(3+Tab) TO-247AD
***S
new, original packaged
***el Nordic
Contact for details
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IRFPG50PBF N-channel MOSFET Transistor, 6.1 A, 1000 V, 3-Pin TO-247AC
*** Source Electronics
Trans MOSFET N-CH 1KV 6.1A 3-Pin(3+Tab) TO-247AC / MOSFET N-CH 1000V 6.1A TO-247AC
*** Stop Electro
Power Field-Effect Transistor, 6.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ark
N Channel Mosfet, 1Kv, 6.1A, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:6.1A; On Resistance Rds(On):2Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
***ment14 APAC
MOSFET TRANSISTOR N CH; Transistor Polarity:N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.1A; Package / Case:TO-247AC; Power Dissipation Pd:190W; Voltage Vds Typ:1kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, 1000V, 6.1A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:1000V; Current, Id Cont:6A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:24A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:180W; Power, Pd:180W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.65°C/W; Transistors, No. of:1; Voltage, Vds:1000V; Voltage, Vds Max:1000V
***ure Electronics
Single N-Channel 900 V 2.5 Ohms Flange Mount Power Mosfet - TO-247AC
***ical
Trans MOSFET N-CH 900V 4.7A 3-Pin(3+Tab) TO-247AC
***ark
Mosfet N-Channel 900V Rohs Compliant: No
***nell
MOSFET, N-CH, 900V, 4.7A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 2.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
***el Electronic
IC SDTV VIDEO AMP 4-CH 14-TSSOP
***(Formerly Allied Electronics)
IRFPF50PBF N-channel MOSFET Transistor, 6.7 A, 900 V, 3-Pin TO-247AC
***ure Electronics
Single N-Channel 900 V 1.6 Ohms Flange Mount Power Mosfet - TO-247AC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:900V; Continuous Drain Current, Id:6.7A; On Resistance, Rds(on):1.6ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 900V, 6.7A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.65°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:190W; Power Dissipation Pd:190W; Pulse Current Idm:27A; Termination Type:Through Hole; Voltage Vds:900V; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 1500 V, 1.6 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package
***ure Electronics
Single N-Channel 1500 V 1.9 Ohm 47 nC MDmesh™ K5 Power MOSFET - LFPAK-4
*** Electronics
STW12N150K5 STMicroelectronics MOSFET N-Ch 1500V 7A TO247 RoHS
***ark
Mosfet, N-Ch, 1.5Kv, 7A, 150Deg C, 250W Rohs Compliant: Yes
***el Electronic
16-bit Microcontrollers - MCU BL Auto Micro Processors
***r Electronics
Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFETs in TO-247 package
***ical
Trans MOSFET N-CH 1.05KV 4A 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
***r Electronics
Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 1200 V 290 mO 20 A Flange Mount Silicon Carbide Power Mosfet - HiP247™
***nell
MOSFET, N-CH, 1.2KV, 20A, HIP247; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.169ohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs: 3.5V;
***ark
Mosfet, N-Ch, 1.2Kv, 20A, Hip247; Mosfet Module Configuration:single; Channel Type:n Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:3Pins; Rds(On) Test Voltage:20V; Power Dissipation:175W; Msl:-Rohs Compliant: Yes
型号 制造商 描述 库存 价格
IXTH6N120
DISTI # 30284411		IXYS CorporationTrans MOSFET N-CH Si 1.2KV 6A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		570
  • 30:$9.0133
IXTH6N120
DISTI # IXTH6N120-ND		IXYS CorporationMOSFET N-CH 1200V 6A TO-247AD
RoHS: Compliant
Min Qty: 30
Container: Box		Temporarily Out of Stock
  • 30:$8.2617
IXTH6N120
DISTI # 747-IXTH6N120		IXYS CorporationMOSFET 6 Amps 1200V 2.700 Rds
RoHS: Compliant		113
  • 1:$11.5800
  • 10:$10.4300
  • 25:$8.6800
  • 50:$8.0600
  • 100:$7.8800
  • 250:$7.1900
  • 500:$6.5600
  • 1000:$6.2600
IXTH6N120IXYS CorporationSingle N-Channel 1200 V 700 mOhm 300 W Power Mosfet - TO-247 AD
RoHS: Compliant		967Tube
  • 2:$10.5200
  • 10:$8.8900
  • 25:$8.3100
  • 50:$7.9000
  • 100:$7.5100
IXTH6N120
DISTI # XSFP00000008501		IXYS CorporationPowerField-EffectTransistor,30AI(D),200V,0.075ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-247AC
RoHS: Compliant		780
  • 780:$13.1500
  • 30:$14.0300
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可用性
库存:
101
订购:
2084
输入数量:
IXTH6N120的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$11.58
US$11.58
10
US$10.43
US$104.30
25
US$8.26
US$206.50
50
US$8.06
US$403.00
100
US$7.88
US$788.00
250
US$7.19
US$1 797.50
500
US$6.56
US$3 280.00
1000
US$6.26
US$6 260.00
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