IXyH100N65C3

IXyH100N65C3
Mfr. #:
IXyH100N65C3
制造商:
Littelfuse
描述:
IGBT Transistors 650V/200A XPT C3-Class TO-247
生命周期:
制造商新产品。
数据表:
IXyH100N65C3 数据表
交货:
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HTML Datasheet:
IXyH100N65C3 DatasheetIXyH100N65C3 Datasheet (P4-P6)
ECAD Model:
更多信息:
IXyH100N65C3 更多信息
产品属性
属性值
制造商:
IXYS
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-247-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
650 V
集电极-发射极饱和电压:
1.85 V
最大栅极发射极电压:
30 V
25 C 时的连续集电极电流:
200 A
Pd - 功耗:
830 W
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
系列:
IXYH100N65
打包:
管子
连续集电极电流 Ic 最大值:
200 A
品牌:
IXYS
栅极-发射极漏电流:
100 nA
产品类别:
IGBT晶体管
出厂包装数量:
30
子类别:
IGBT
商品名:
XPT
单位重量:
1.340411 oz
Tags
IXYH10, IXYH1, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 200A
***i-Key
IGBT 650V 200A 830W TO247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
型号 制造商 描述 库存 价格
IXYH100N65C3
DISTI # V36:1790_07768386
Littelfuse IncTrans IGBT Chip N-CH 650V 200A 830000mW 3-Pin(3+Tab) TO-247AD0
  • 30000:$4.0970
  • 15000:$4.1000
  • 3000:$4.4990
  • 300:$5.2560
  • 30:$5.3860
IXYH100N65C3
DISTI # IXYH100N65C3-ND
IXYS CorporationIGBT 650V 200A 830W TO247
Min Qty: 1
Container: Tube
316In Stock
  • 1000:$4.7912
  • 500:$5.5010
  • 250:$6.0333
  • 100:$6.3172
  • 25:$7.2756
  • 10:$7.6300
  • 1:$8.4500
IXYH100N65C3
DISTI # 747-IXYH100N65C3
IXYS CorporationIGBT Transistors 650V/200A XPT C3-Class TO-247
RoHS: Compliant
66
  • 1:$8.8700
  • 10:$7.9800
  • 25:$7.2700
  • 50:$6.6500
  • 100:$6.5600
  • 250:$5.9800
  • 500:$5.5000
  • 1000:$4.7900
IXYH100N65C3IXYS CorporationIGBT Transistors 650V/200A XPT C3-Class TO-247
RoHS: Compliant
Americas -
    IXYH100N65C3
    DISTI # IXYH100N65C3
    IXYS Corporation650V 200A 830W TO247AD
    RoHS: Compliant
    28
    • 1:€8.3900
    • 5:€5.3900
    • 30:€4.3900
    • 60:€4.2300
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    IGBT Transistors 650V FS Trench IGBT Gen3
    可用性
    库存:
    66
    订购:
    2049
    输入数量:
    IXyH100N65C3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$8.87
    US$8.87
    10
    US$7.98
    US$79.80
    25
    US$7.27
    US$181.75
    50
    US$6.65
    US$332.50
    100
    US$6.56
    US$656.00
    250
    US$5.98
    US$1 495.00
    500
    US$5.50
    US$2 750.00
    1000
    US$4.79
    US$4 790.00
    2500
    US$4.73
    US$11 825.00
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