IPB083N15N5LFATMA1

Mfr. #:: IPB083N15N5LFATMA1
制造商:: Infineon Technologies
描述:: MOSFET N-CH 150V 105A TO263-3
生命周期:: 制造商新产品。
数据表:: IPB083N15N5LFATMA1 数据表
交货:: DHL FedEx Ups TNT EMS
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产品属性
属性值

Tags: IPB083, IPB08, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB083N15N5LFATMA1 描述

***i-Key: MOSFET N-CH 150V 105A TO263-3

***et Europe: DIFFERENTIATED MOSFETS

***ark: Mosfet, N-Ch, 150V, 105A, 179W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:105A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.0069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.1V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 150V, 105A, 179W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:105A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.1V; Power Dissipation Pd:179W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CAN N, 150V, 105A, 179W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:105A; Tensione Drain Source Vds:150V; Resistenza di Attivazione Rds(on):0.0069ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.1V; Dissipazione di Potenza Pd:179W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. | Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management

Market price

型号	制造商	描述	库存	价格
IPB083N15N5LFATMA1 DISTI # V36:1790_18205009	Infineon Technologies AG	DIFFERENTIATED MOSFETS	0
IPB083N15N5LFATMA1 DISTI # IPB083N15N5LFATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 150V 105A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	881In Stock	500:$3.5977 100:$4.4430 10:$5.4180 1:$6.0700
IPB083N15N5LFATMA1 DISTI # IPB083N15N5LFATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 105A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	881In Stock	500:$3.5977 100:$4.4430 10:$5.4180 1:$6.0700
IPB083N15N5LFATMA1 DISTI # IPB083N15N5LFATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 150V 105A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$2.7986 1000:$2.9459
IPB083N15N5LFATMA1 DISTI # SP001503862	Infineon Technologies AG	DIFFERENTIATED MOSFETS (Alt: SP001503862) RoHS: Compliant Min Qty: 1000	Europe - 1000	1000:€3.2900 2000:€2.5900 4000:€2.3900 6000:€2.2900 10000:€2.0900
IPB083N15N5LFATMA1 DISTI # IPB083N15N5LFATMA1	Infineon Technologies AG	DIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB083N15N5LFATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$2.6900 2000:$2.5900 4000:$2.4900 6000:$2.3900 10000:$2.3900
IPB083N15N5LFATMA1 DISTI # 93AC7101	Infineon Technologies AG	MOSFET, N-CH, 150V, 105A, 179W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:105A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.0069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.1V,Power RoHS Compliant: Yes	986	500:$2.5400 250:$2.8300 100:$2.9800 50:$3.1400 25:$3.2900 10:$3.4400 1:$4.0500
IPB083N15N5LFATMA1 DISTI # 726-IPB083N15N5LF	Infineon Technologies AG	MOSFET RoHS: Compliant	447	1:$5.0600 10:$4.3000 100:$3.7300 250:$3.5400 500:$3.1700 1000:$2.6700 2000:$2.5400
IPB083N15N5LFATMA1 DISTI # XSKDRABV0021209	Infineon Technologies AG	RoHS: Compliant	3000 in Stock0 on Order	3000:$3.9240 1000:$4.2000
IPB083N15N5LFATMA1 DISTI # 2986459	Infineon Technologies AG	MOSFET, N-CH, 150V, 105A, 179W, TO-263 RoHS: Compliant	986	1000:$3.6900 500:$4.2100 250:$4.6500 100:$4.9100 10:$5.6000 1:$7.1200
IPB083N15N5LFATMA1 DISTI # 2986459	Infineon Technologies AG	MOSFET, N-CH, 150V, 105A, 179W, TO-263 RoHS: Compliant	986	500:£2.4500 250:£2.7800 100:£2.9400 10:£3.4100 1:£4.4400

IPB083N15N5LFATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes