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SGP23N60UFDTU

SGP23N60UFDTU
Mfr. #:
SGP23N60UFDTU
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors Dis High Perf IGBT
生命周期:
制造商新产品。
数据表:
SGP23N60UFDTU 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SGP23N60UFDTU Datasheet
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-220-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
集电极-发射极饱和电压：
2.1 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
23 A
Pd - 功耗：
100 W
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
系列：
SGP23N60UFD
打包：
管子
连续集电极电流 Ic 最大值：
23 A
高度：
9.4 mm
长度：
10.1 mm
宽度：
4.7 mm
品牌：
安森美半导体/飞兆半导体
连续集电极电流：
23 A
栅极-发射极漏电流：
+/- 100 nA
产品类别：
IGBT晶体管
出厂包装数量：
1000
子类别：
IGBT
第 # 部分别名：
SGP23N60UFDTU_NL
单位重量：
0.063493 oz
Tags
SGP23N60UFD, SGP23N60U, SGP23, SGP2, SGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220 Rail
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***nell
IGBT, 600V, 7A, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Ope
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IGBT, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
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***nell
IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
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Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, N, 600V, 10A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:10A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
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Trans IGBT Chip N-CH 600V 24A 110000mW 3-Pin(3+Tab) TO-220AB Tube
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***nsix Microsemi
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ineon SCT
Infineon's 600 V, 10 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
型号 制造商 描述 库存 价格
SGP23N60UFDTU
DISTI # C1S541901576781		ON SemiconductorTrans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		5200
  • 2000:$0.9020
  • 500:$1.2700
  • 5:$2.0700
SGP23N60UFDTU
DISTI # SGP23N60UFDTU-ND		ON SemiconductorIGBT 600V 23A 100W TO220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
  • 1000:$1.0099
SGP23N60UFDTU
DISTI # SGP23N60UFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: SGP23N60UFDTU)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.7909
  • 2000:$0.7859
  • 4000:$0.7759
  • 6000:$0.7659
  • 10000:$0.7469
SGP23N60UFDTU
DISTI # 512-SGP23N60UFDTU		ON SemiconductorIGBT Transistors Dis High Perf IGBT
RoHS: Compliant		0
    SGP23N60UFDTU
    DISTI # XSFP00000158817    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		1346
    • 1000:$1.9400
    • 1346:$1.7600
    图片 型号 描述
    SGP23N60UFTU

    Mfr.#: SGP23N60UFTU

    OMO.#: OMO-SGP23N60UFTU

    		 IGBT Transistors Dis High Perf IGBT
    SGP23N60UFDTU

    Mfr.#: SGP23N60UFDTU

    OMO.#: OMO-SGP23N60UFDTU

    		 IGBT Transistors Dis High Perf IGBT
    SGP23N60

    Mfr.#: SGP23N60

    OMO.#: OMO-SGP23N60-1190

    		 全新原装
    SGP23N60RUFD

    Mfr.#: SGP23N60RUFD

    OMO.#: OMO-SGP23N60RUFD-1190

    		 全新原装
    SGP23N60UF

    Mfr.#: SGP23N60UF

    OMO.#: OMO-SGP23N60UF-1190

    		 全新原装
    SGP23N60UFD

    Mfr.#: SGP23N60UFD

    OMO.#: OMO-SGP23N60UFD-1190

    		 全新原装
    SGP23N60UFD G23N60UFD

    Mfr.#: SGP23N60UFD G23N60UFD

    OMO.#: OMO-SGP23N60UFD-G23N60UFD-1190

    		 全新原装
    SGP23N60UFDTU_NL

    Mfr.#: SGP23N60UFDTU_NL

    OMO.#: OMO-SGP23N60UFDTU-NL-1190

    		 全新原装
    SGP23N60UFDTU

    Mfr.#: SGP23N60UFDTU

    OMO.#: OMO-SGP23N60UFDTU-ON-SEMICONDUCTOR

    		 IGBT Transistors Dis High Perf IGBT
    SGP23N60UFTU

    Mfr.#: SGP23N60UFTU

    OMO.#: OMO-SGP23N60UFTU-ON-SEMICONDUCTOR

    		 IGBT 600V 23A 100W TO220-3
    可用性
    库存:
    Available
    订购:
    4000
    输入数量:
    SGP23N60UFDTU的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$2.13
    US$2.13
    10
    US$1.81
    US$18.10
    100
    US$1.45
    US$145.00
    500
    US$1.27
    US$635.00
    1000
    US$1.05
    US$1 050.00
    2000
    US$0.98
    US$1 960.00
    5000
    US$0.94
    US$4 715.00
    10000
    US$0.91
    US$9 070.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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