GS8162Z18DGD-333IV

GS8162Z18DGD-333IV
Mfr. #:
GS8162Z18DGD-333IV
制造商:
GSI Technology
描述:
SRAM 1.8/2.5V 1M x 18 18M
生命周期:
制造商新产品。
数据表:
GS8162Z18DGD-333IV 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
GS8162Z18DGD-333IV 更多信息
产品属性
属性值
制造商:
GSI技术
产品分类:
静态随机存取存储器
RoHS:
Y
内存大小:
18 Mbit
组织:
1 M x 18
访问时间:
5 ns
最大时钟频率:
333 MHz
接口类型:
平行线
电源电压 - 最大值:
2.7 V
电源电压 - 最小值:
1.7 V
电源电流 - 最大值:
240 mA, 300 mA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
安装方式:
贴片/贴片
包装/案例:
BGA-165
打包:
托盘
内存类型:
特别提款权
系列:
GS8162Z18DGD
类型:
NBT PL/FT
品牌:
GSI技术
湿气敏感:
是的
产品类别:
静态随机存取存储器
出厂包装数量:
18
子类别:
内存和数据存储
商品名:
静态随机存取存储器
Tags
GS8162Z18DGD-33, GS8162Z18DGD-3, GS8162Z18DGD, GS8162Z18DG, GS8162Z18D, GS8162Z1, GS8162Z, GS8162, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    I***k
    I***k
    SK

    Super :)

    2019-04-07
    A***n
    A***n
    RU

    Ordered 20 diodes on march 3. The order was long. The seller sent it quickly, to the territory of russia the order was quickly, and then lost. The seller twice extended the buyer's protection period. The item was not tracked, such delivery was chosen by the seller. I had no hope of ever seeing the diodes, but today, may 28, i found the opened package in the mailbox. My mailbox is locked. The box was not opened. The address on the package is correct. There were 19 diodes in the package. Testing with the multimeter confirmed their correctness. Because of one diode scandal there is no sense, especially since it is clearly the fault of the person who delivered the goods, not the seller.

    2019-05-28
***et
SRAM Chip Sync Dual 1.8V/2.5V 18M-Bit 1M x 18 5ns/3ns 165-Pin FBGA
NBT SRAMs
GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. 
图片 型号 描述
GS8162Z18DGB-250I

Mfr.#: GS8162Z18DGB-250I

OMO.#: OMO-GS8162Z18DGB-250I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8162Z18DGD-150IV

Mfr.#: GS8162Z18DGD-150IV

OMO.#: OMO-GS8162Z18DGD-150IV

SRAM 1.8/2.5V 1M x 18 18M
GS8162Z18DB-250IV

Mfr.#: GS8162Z18DB-250IV

OMO.#: OMO-GS8162Z18DB-250IV

SRAM 1.8/2.5V 1M x 18 18M
GS8162Z18DD-150IV

Mfr.#: GS8162Z18DD-150IV

OMO.#: OMO-GS8162Z18DD-150IV

SRAM 1.8/2.5V 1M x 18 18M
GS8162Z18DGB-150

Mfr.#: GS8162Z18DGB-150

OMO.#: OMO-GS8162Z18DGB-150

SRAM 2.5 or 3.3V 1M x 18 18M
GS8162Z18DB-200

Mfr.#: GS8162Z18DB-200

OMO.#: OMO-GS8162Z18DB-200

SRAM 2.5 or 3.3V 1M x 18 18M
GS8162Z18DD-150

Mfr.#: GS8162Z18DD-150

OMO.#: OMO-GS8162Z18DD-150

SRAM 2.5 or 3.3V 1M x 18 18M
GS8162Z18DB-150V

Mfr.#: GS8162Z18DB-150V

OMO.#: OMO-GS8162Z18DB-150V

SRAM 1.8/2.5V 1M x 18 18M
GS8162Z18DGB-250

Mfr.#: GS8162Z18DGB-250

OMO.#: OMO-GS8162Z18DGB-250

SRAM 2.5 or 3.3V 1M x 18 18M
GS8162Z18DD-400I

Mfr.#: GS8162Z18DD-400I

OMO.#: OMO-GS8162Z18DD-400I

SRAM 2.5 or 3.3V 1M x 18 18M
可用性
库存:
Available
订购:
5500
输入数量:
GS8162Z18DGD-333IV的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$31.69
US$31.69
25
US$29.43
US$735.75
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