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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SIHB22N60S-E3 DISTI # 74R0202 | Vishay Intertechnologies | MOSFET, N CHANNEL, 600V, 22A, D2PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:600V,On Resistance Rds(on):160mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,No. of Pins:3 RoHS Compliant: Yes | 0 | |
| SIHB22N60S-E3 DISTI # 781-SIHB22N60S-E3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | 0 | |
| SIHB22N60SE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | Europe - 200 | |
| SIHB22N60S-E3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | Americas - | |
| SIHB22N60S-E3 DISTI # 1794783 | Vishay Intertechnologies | MOSFET, N CH, 600V, 22A, TO263 RoHS: Compliant | 0 |
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| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: SIHB22N60EF-GE3 OMO.#: OMO-SIHB22N60EF-GE3 |
MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode |
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Mfr.#: SIHB22N60AE-GE3 OMO.#: OMO-SIHB22N60AE-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
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Mfr.#: SIHB22N60ET5-GE3 OMO.#: OMO-SIHB22N60ET5-GE3 |
MOSFET 600V Vds E Series D2PAK TO-263 |
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Mfr.#: SIHB22N60S-E3 OMO.#: OMO-SIHB22N60S-E3-126 |
IGBT Transistors MOSFET 600V N-Channel Superjunction D2PAK |
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Mfr.#: SIHB22N60AEL-GE3 OMO.#: OMO-SIHB22N60AEL-GE3-VISHAY |
MOSFET N-CHAN 600V |
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Mfr.#: SIHB22N60AE-GE3 OMO.#: OMO-SIHB22N60AE-GE3-VISHAY |
MOSFET N-CH 600V 20A D2PAK |
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Mfr.#: SIHB22N60E OMO.#: OMO-SIHB22N60E-1190 |
Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: SIHB22N60E-GE3 OMO.#: OMO-SIHB22N60E-GE3-VISHAY |
MOSFET N-CH 600V 21A D2PAK |
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Mfr.#: SIHB22N60ET1-GE3 OMO.#: OMO-SIHB22N60ET1-GE3-VISHAY |
MOSFET N-CH 600V 21A TO263 |
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Mfr.#: SIHB22N60S-GE3 OMO.#: OMO-SIHB22N60S-GE3-VISHAY |
MOSFET N-CH 650V TO263 |
