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FDMC86102LZ

FDMC86102LZ
Mfr. #:
FDMC86102LZ
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET 100V N-Channel PowerTrench MOSFET
生命周期:
制造商新产品。
数据表:
FDMC86102LZ 数据表
交货:
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支付:
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ECAD Model:
更多信息:
FDMC86102LZ 更多信息
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
Power-33-8
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
100 V
Id - 连续漏极电流：
7 A
Rds On - 漏源电阻：
24 mOhms
Vgs th - 栅源阈值电压：
1.6 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
15.3 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
41 W
配置：
单身的
商品名：
动力战壕
打包：
卷轴
高度：
0.8 mm
长度：
3.3 mm
系列：
FDMC86102LZ
晶体管类型：
1 N-Channel
宽度：
3.3 mm
品牌：
安森美半导体/飞兆半导体
正向跨导 - 最小值：
24 S
秋季时间：
2.5 ns
产品类别：
MOSFET
上升时间：
2.3 ns
出厂包装数量：
3000
子类别：
MOSFET
典型关断延迟时间：
19 ns
典型的开启延迟时间：
7.1 ns
单位重量：
0.005832 oz
Tags
FDMC86102, FDMC8610, FDMC861, FDMC86, FDMC8, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Shielded Gate Power Trench® MOSFET 100V, 22A, 24mΩ
***nell
MOSFET, N CH, 100V, 22A, POWER 33-8; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:41W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
***ark
TUBE // Automotive MOSFET 55V, 49A, 17.5 mOhm, 42 nC Qg, D2PAK
***ical
Trans MOSFET N-CH Si 55V 49A Automotive 3-Pin(2+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***roFlash
Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Benefits: Advanced Planar Technology; Low On-Resistance; Dynamic dV/dT and dI/dT capability; 175C Operating Temperature; Fast Switching; Fully Avalanche Rated; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***ment14 APAC
MOSFET, N CH, 55V, 49A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0175ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
***emi
N-Channel PowerTrench® MOSFET 30V, 12A, 11.5mΩ
*** Source Electronics
MOSFET N-CH 30V 20A POWER33 / Trans MOSFET N-CH Si 30V 12A 8-Pin WDFN EP T/R
***nell
MOSFET, N CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
***ure Electronics
Single N-Channel 600 V 230 mOhm 31 nC CoolMOS™ Power Mosfet - TO-220-3FP
***ical
Trans MOSFET N-CH 600V 16.8A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N-CH, 600V, 16.8A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 16.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.207ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
*** Source Electronics
MOSFET N CH 60V 13.5A 8PQFN / Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
***emi
N-Channel PowerTrench® MOSFET 60V, 22A, 8.2mΩ
***ure Electronics
FDMS86520L Series 60 V 22 A 8.2 mOhm N-Ch PowerTrench® MOSFET - Power 56
*** Stop Electro
Power Field-Effect Transistor, 13.5A I(D), 60V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 60V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
***sible Micro
Transistor, MOSFET, N-CH, 60V, 25A, 2.5 mOhms, QFN, SMD
***Yang
Trans MOSFET N-CH 60V 25A 8-Pin Power 56 T/R - Product that comes on tape, but is not reeled
***ure Electronics
FDMS86500L Series 60 V 158 A 2.5 mOhm N-Channel PowerTrench® MOSFET - POWER-56
***emi
N-Channel PowerTrench® MOSFET 60V, 158A, 2.5mΩ
*** Stop Electro
Power Field-Effect Transistor, 25A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***enic
60V 158A 2.1m´Î@10V25A 104W 1.8V@250uA 50pF@30V N Channel 9.42nF@30V 54nC@0~4.5V -55¡Í~+150¡Í@(Tj) Power-56-8 MOSFETs ROHS
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low RDS(on), fast switching speed and body diode reverse recovery performance.
***nell
MOSFET, N CH, 60V, 80A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Fairchild PowerTrench MOSFETs
FDMC8xxxx N-Ch Shielded Gate PowerTrench® MOSFETs
ON Semiconductor FDMC8xxxx N-Channel Shielded Gate PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. FDMC8xxxx MOSFETs are designed for use in DC-DC conversion applications.Learn More
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
型号 制造商 描述 库存 价格
FDMC86102LZ
DISTI # V72:2272_06337908		ON SemiconductorPT5 100V/20V NCH WITH ZENER PO1330
  • 1000:$0.6556
  • 500:$0.8315
  • 250:$0.9479
  • 100:$0.9636
  • 25:$1.1257
  • 10:$1.2508
  • 1:$1.6018
FDMC86102LZ
DISTI # V36:1790_06337908		ON SemiconductorPT5 100V/20V NCH WITH ZENER PO0
  • 3000000:$0.5242
  • 1500000:$0.5245
  • 300000:$0.5549
  • 30000:$0.6106
  • 3000:$0.6200
FDMC86102LZ
DISTI # FDMC86102LZCT-ND		ON SemiconductorMOSFET N-CH 100V 7A 8MLP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		23167In Stock
  • 1000:$0.7300
  • 500:$0.9247
  • 100:$1.1194
  • 10:$1.4360
  • 1:$1.6100
FDMC86102LZ
DISTI # FDMC86102LZDKR-ND		ON SemiconductorMOSFET N-CH 100V 7A 8MLP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		23167In Stock
  • 1000:$0.7300
  • 500:$0.9247
  • 100:$1.1194
  • 10:$1.4360
  • 1:$1.6100
FDMC86102LZ
DISTI # FDMC86102LZTR-ND		ON SemiconductorMOSFET N-CH 100V 7A 8MLP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		21000In Stock
  • 15000:$0.6048
  • 6000:$0.6284
  • 3000:$0.6615
FDMC86102LZ
DISTI # 33259028		ON SemiconductorPT5 100V/20V NCH WITH ZENER PO6000
  • 3000:$0.6004
FDMC86102LZ
DISTI # 32040017		ON SemiconductorPT5 100V/20V NCH WITH ZENER PO1330
  • 10:$1.6018
FDMC86102LZ
DISTI # 30578517		ON SemiconductorPT5 100V/20V NCH WITH ZENER PO130
  • 13:$1.9875
FDMC86102LZ
DISTI # FDMC86102LZ		ON SemiconductorTrans MOSFET N-CH 100V 7A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC86102LZ)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.5549
  • 18000:$0.5689
  • 12000:$0.5759
  • 6000:$0.5839
  • 3000:$0.5879
FDMC86102LZ
DISTI # FDMC86102LZ		ON SemiconductorTrans MOSFET N-CH 100V 7A 8-Pin Power 33 T/R (Alt: FDMC86102LZ)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
  • 150000:$0.7377
  • 75000:$0.7500
  • 30000:$0.7759
  • 15000:$0.8036
  • 9000:$0.8333
  • 6000:$0.8654
  • 3000:$0.9000
FDMC86102LZ
DISTI # FDMC86102LZ		ON SemiconductorTrans MOSFET N-CH 100V 7A 8-Pin Power 33 T/R (Alt: FDMC86102LZ)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.5589
  • 18000:€0.6019
  • 12000:€0.6519
  • 6000:€0.7109
  • 3000:€0.8689
FDMC86102LZ
DISTI # 84W8861		ON SemiconductorTrans MOSFET N-CH 100V 7A 8-Pin Power 33 T/R - Product that comes on tape, but is not reeled (Alt: 84W8861)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1000:$0.6960
  • 500:$0.8770
  • 250:$0.9330
  • 100:$0.9890
  • 50:$1.1300
  • 25:$1.2800
  • 1:$1.5000
FDMC86102LZ
DISTI # 54T8331		ON SemiconductorMOSFET, N CHANNEL, 100V, 0.019OHM, 22A, MLP-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.6200
  • 3000:$0.6200
FDMC86102LZ
DISTI # 84W8861		ON SemiconductorMOSFET, N CHANNEL, 100V, 0.019OHM, 22A, POWER 33-8,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:41WRoHS Compliant: Yes0
  • 1000:$0.6960
  • 500:$0.8770
  • 250:$0.9330
  • 100:$0.9890
  • 50:$1.1300
  • 25:$1.2800
  • 1:$1.5000
FDMC86102LZ
DISTI # 512-FDMC86102LZ		ON SemiconductorMOSFET 100V N-Channel PowerTrench MOSFET
RoHS: Compliant		58647
  • 1:$1.4700
  • 10:$1.2600
  • 100:$0.9680
  • 500:$0.8560
  • 1000:$0.6750
  • 3000:$0.5990
  • 9000:$0.5770
FDMC86102LZACTIVE COMPNTS/DIODES 50
    FDMC86102LZ
    DISTI # 8063507P    		ON SemiconductorMOSFETFAIRCHILDFDMC86102LZ, RL7065
    • 500:£0.5620
    • 250:£0.5700
    • 50:£0.5780
    • 25:£0.5840
    FDMC86102LZFairchild Semiconductor Corporation7A, 100V, 0.024OHM, N-CHANNEL, SI, POWER, MOSFET5
      FDMC86102LZ
      DISTI # 2822536      		ON SemiconductorMOSFET, N-CH, 100V, 22A, POWER 33-88216
      • 500:£0.6670
      • 250:£0.7100
      • 100:£0.7530
      • 10:£1.0300
      • 1:£1.3100
      FDMC86102LZ
      DISTI # 2323180      		ON SemiconductorMOSFET, N CH, 100V, 22A, POWER 33-8
      RoHS: Compliant      		0
      • 15000:$0.9670
      • 6000:$1.0100
      • 3000:$1.0700
      FDMC86102LZ
      DISTI # 2822536      		ON SemiconductorMOSFET, N-CH, 100V, 22A, POWER 33-8
      RoHS: Compliant      		7741
      • 5000:$0.8510
      • 1000:$0.8730
      • 500:$0.9470
      • 250:$1.1600
      • 100:$1.4100
      • 25:$2.0600
      • 5:$2.4100
      图片 型号 描述
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      		 Analog to Digital Converters - ADC 12B 1MSPS 8Ch Sgl End MicroPwr SAR ADC
      TMS320F28335ZJZQ

      Mfr.#: TMS320F28335ZJZQ

      OMO.#: OMO-TMS320F28335ZJZQ

      		 Digital Signal Processors & Controllers - DSP, DSC Digital Signal Controller
      IRS21844MTRPBF

      Mfr.#: IRS21844MTRPBF

      OMO.#: OMO-IRS21844MTRPBF

      		 Gate Drivers Hlf Brdg Drvr Sft Trn On Invrt ShutDwn
      AT45DB161E-MHF2B-T

      Mfr.#: AT45DB161E-MHF2B-T

      OMO.#: OMO-AT45DB161E-MHF2B-T

      		 NOR Flash 16M, 85MHz 2.3-3.6V DataFlash
      SR70-02CTG

      Mfr.#: SR70-02CTG

      OMO.#: OMO-SR70-02CTG

      		 TVS Diodes / ESD Suppressors 2CH 15KV 70V
      TPS3803G15DCKR

      Mfr.#: TPS3803G15DCKR

      OMO.#: OMO-TPS3803G15DCKR

      		 Supervisory Circuits Adj 1.5V V Detector
      1SMB5933BT3G

      Mfr.#: 1SMB5933BT3G

      OMO.#: OMO-1SMB5933BT3G

      		 Zener Diodes 22V 3W
      FDMC86520L

      Mfr.#: FDMC86520L

      OMO.#: OMO-FDMC86520L

      		 MOSFET 60V N-Chnl Pwr Trench MOSFET
      IRS21844MTRPBF

      Mfr.#: IRS21844MTRPBF

      OMO.#: OMO-IRS21844MTRPBF-INFINEON-TECHNOLOGIES

      		 Gate Drivers Hlf Brdg Drvr Sft Trn On Invrt ShutDwn
      ADS7951SBRGET

      Mfr.#: ADS7951SBRGET

      OMO.#: OMO-ADS7951SBRGET-TEXAS-INSTRUMENTS

      		 Analog to Digital Converters - ADC 12B 1MSPS 8Ch Sgl End MicroPwr SAR ADC
      可用性
      库存:
      58
      订购:
      2041
      输入数量:
      FDMC86102LZ的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$1.47
      US$1.47
      10
      US$1.26
      US$12.60
      100
      US$0.97
      US$96.80
      500
      US$0.86
      US$428.00
      1000
      US$0.68
      US$675.00
      由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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