SIA527DJ-T1-GE3

Name: Vishay - SIA527DJ-T1-GE3
Brand: Vishay
SKU: OMO-3518518
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIA527DJ-T1-GE3
制造商:: Vishay
描述:: MOSFET N/P-CH 12V 4.5A SC-70-6
生命周期:: 制造商新产品。
数据表:: SIA527DJ-T1-GE3 数据表
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更多信息:: SIA527DJ-T1-GE3 更多信息

产品属性
属性值

制造商: 威世硅

产品分类: FET - 阵列

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

单位重量: 0.000988 oz

安装方式: 贴片/贴片

商品名: 沟槽场效应晶体管

包装盒: PowerPAKR SC-70-6 Dual

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: PowerPAKR SC-70-6 Dual

配置: 1 N-Channel 1 P-Channel

FET型: N 和 P 沟道

最大功率: 7.8W

晶体管型: 1 N-Channel 1 P-Channel

漏源电压 Vdss: 12V

输入电容-Ciss-Vds: 500pF @ 6V

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 4.5A

Rds-On-Max-Id-Vgs: 29 mOhm @ 5A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

栅极电荷-Qg-Vgs: 15nC @ 8V

钯功耗: 7.8 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 10 ns

上升时间: 10 ns

VGS-栅极-源极-电压: + /- 8 V

Id 连续漏极电流: 4.5 A

Vds-漏-源-击穿电压: 12 V

VGS-th-Gate-Source-Threshold-Voltage: 1 V - 1 V

Rds-On-Drain-Source-Resistance: 41 mOhms

晶体管极性: N 沟道 P 沟道

典型关断延迟时间: 22 ns

典型开启延迟时间: 10 ns

Qg-门电荷: 5.6 nC

通道模式: 增强

Tags: SIA5, SIA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA527DJ-T1-GE3 描述

***et Europe: Trans MOSFET N/P-CH 12V 4.5A/4.5A 6-Pin PowerPAK SC-70 T/R

*** Americas: N- AND P-CHANNEL 12-V (D-S) MOSFET

***ark: N/P-Ch PPAK SC-70 12V 29/41mohms @ 4.5V

***ronik: N+P-MOS-FET 4,5A 12V PP-SC70-6

SIA527DJ-T1-GE3 更多信息

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

N & P Channel Pair Thermally Enhanced MOSFETs: Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.

Market price

型号	制造商	描述	库存	价格
SIA527DJ-T1-GE3 DISTI # V72:2272_09216728	Vishay Intertechnologies	Trans MOSFET N/P-CH Si 12V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	4416	3000:$0.1770 1000:$0.2034 500:$0.2497 250:$0.2869 100:$0.3187 25:$0.4239 10:$0.4710 1:$0.6063
SIA527DJ-T1-GE3 DISTI # V36:1790_09216728	Vishay Intertechnologies	Trans MOSFET N/P-CH Si 12V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	0	6000000:$0.1636 3000000:$0.1638 600000:$0.1750 60000:$0.1925 6000:$0.1953
SIA527DJ-T1-GE3 DISTI # SIA527DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	36100In Stock	1000:$0.2206 500:$0.2855 100:$0.3634 10:$0.4870 1:$0.5700
SIA527DJ-T1-GE3 DISTI # SIA527DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	36100In Stock	1000:$0.2206 500:$0.2855 100:$0.3634 10:$0.4870 1:$0.5700
SIA527DJ-T1-GE3 DISTI # SIA527DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	33000In Stock	30000:$0.1613 15000:$0.1701 6000:$0.1827 3000:$0.1953
SIA527DJ-T1-GE3 DISTI # 27089799	Vishay Intertechnologies	Trans MOSFET N/P-CH Si 12V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	4416	38:$0.6063
SIA527DJ-T1-GE3 DISTI # SIA527DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 12V 4.5A/4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA527DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 12000
SIA527DJ-T1-GE3 DISTI # SIA527DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 12V 4.5A/4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA527DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1559 18000:€0.1669 12000:€0.1809 6000:€0.2109 3000:€0.3089
SIA527DJ-T1-GE3 DISTI # 67X6801	Vishay Intertechnologies	N- AND P-CHANNEL 12-V (D-S) MOSFET	0	50000:$0.1550 30000:$0.1620 20000:$0.1740 10000:$0.1860 5000:$0.2020 1:$0.2070
SIA527DJ-T1-GE3 DISTI # 78-SIA527DJ-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs SC-70 N&P PAIR RoHS: Compliant	622	1:$0.5600 10:$0.4330 100:$0.3210 500:$0.2640 1000:$0.2040 3000:$0.1850 6000:$0.1730 9000:$0.1620

SIA527DJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes