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BSC026N02KS

BSC026N02KS
Mfr. #:
BSC026N02KS
制造商:
Infineon Technologies
描述:
生命周期:
制造商新产品。
数据表:
BSC026N02KS 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
英飞凌科技
产品分类
FET - 单
系列
优化MOS
打包
Digi-ReelR 替代包装
部分别名
BSC026N02KSGAUMA1 BSC026N02KSGXT SP000379664
安装方式
贴片/贴片
商品名
优化MOS
包装盒
8-PowerTDFN
技术
硅
工作温度
-55°C ~ 150°C (TJ)
安装型
表面贴装
通道数
1 Channel
供应商-设备-包
PG-TDSON-8
配置
单四漏三源
FET型
MOSFET N 沟道，金属氧化物
最大功率
78W
晶体管型
1 N-Channel
漏源电压 Vdss
20V
输入电容-Ciss-Vds
7800pF @ 10V
FET-Feature
Logic Level Gate, 2.5V Drive
Current-Continuous-Drain-Id-25°C
25A (Ta), 100A (Tc)
Rds-On-Max-Id-Vgs
2.6 mOhm @ 50A, 4.5V
Vgs-th-Max-Id
1.2V @ 200μA
栅极电荷-Qg-Vgs
52.7nC @ 4.5V
钯功耗
2.8 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
9 ns
上升时间
115 ns
VGS-栅极-源极-电压
12 V
Id 连续漏极电流
25 A
Vds-漏-源-击穿电压
20 V
Rds-On-Drain-Source-Resistance
2.6 mOhms
晶体管极性
N通道
典型关断延迟时间
52 ns
典型开启延迟时间
21 ns
通道模式
增强
Tags
BSC026N02, BSC026N0, BSC026, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
BSC026N02KSGAUMA1
DISTI # V72:2272_06384322		Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant		4849
  • 3000:$0.6278
  • 1000:$0.6342
  • 500:$0.7785
  • 250:$0.8718
  • 100:$0.8814
  • 25:$1.0937
  • 10:$1.1069
  • 1:$1.2548
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8909In Stock
  • 1000:$0.8016
  • 500:$1.0154
  • 100:$1.3094
  • 10:$1.6570
  • 1:$1.8700
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8909In Stock
  • 1000:$0.8016
  • 500:$1.0154
  • 100:$1.3094
  • 10:$1.6570
  • 1:$1.8700
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.6901
BSC026N02KSGAUMA1
DISTI # 30701482		Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 10000:$0.5798
  • 5000:$0.6029
BSC026N02KSGAUMA1
DISTI # 26195427		Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant		4849
  • 3000:$0.6278
  • 1000:$0.6342
  • 500:$0.7785
  • 250:$0.8718
  • 100:$0.8814
  • 25:$1.0937
  • 11:$1.1069
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1		Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC026N02KSGAUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.6789
  • 10000:$0.6549
  • 20000:$0.6309
  • 30000:$0.6099
  • 50000:$0.5989
BSC026N02KSGAUMA1
DISTI # 726-BSC026N02KSGAUMA		Infineon Technologies AGMOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
RoHS: Compliant		2883
  • 1:$1.5500
  • 10:$1.3300
  • 100:$1.0200
  • 500:$0.8970
  • 1000:$0.7080
BSC026N02KS G
DISTI # 726-BSC026N02KSG		Infineon Technologies AGMOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
RoHS: Compliant		7566
  • 1:$1.3700
  • 10:$1.1700
  • 100:$0.8920
  • 500:$0.7880
BSC026N02KSGInfineon Technologies AGPower Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		40500
  • 1000:$0.5700
  • 500:$0.6000
  • 100:$0.6200
  • 25:$0.6500
  • 1:$0.7000
BSC026N02KSGAUMA1
DISTI # 7528154P		Infineon Technologies AGMOSFET N-CHANNEL 20V 25A OPTIMOS2 TDSON8, RL3490
  • 50:£0.8500
  • 250:£0.6650
  • 1250:£0.4650
  • 2500:£0.4400
BSC026N02KSGAUMA1
DISTI # 1775434		Infineon Technologies AGMOSFET, N CH, 100A, 20V, PG-TDSON-8
RoHS: Compliant		0
  • 1:$2.1700
  • 10:$1.8500
  • 100:$1.4100
  • 500:$1.2500
  • 1000:$0.9840
  • 5000:$0.9840
BSC026N02KSGAUMA1
DISTI # C1S322000653078		Infineon Technologies AGMOSFETs
RoHS: Compliant		4849
  • 250:$0.9013
  • 100:$0.9038
  • 25:$1.1116
  • 10:$1.1161
BSC026N02KSGAUMA1
DISTI # C1S322000644539		Infineon Technologies AGMOSFETs
RoHS: Compliant		5000
  • 5000:$0.6420
图片 型号 描述
BSC024NE2LS

Mfr.#: BSC024NE2LS

OMO.#: OMO-BSC024NE2LS

 MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC020N025S G

Mfr.#: BSC020N025S G

OMO.#: OMO-BSC020N025S-G-INFINEON-TECHNOLOGIES

 MOSFET N-CH 25V 100A TDSON-8
BSC020N03LSG,1N4148W T/R

Mfr.#: BSC020N03LSG,1N4148W T/R

OMO.#: OMO-BSC020N03LSG-1N4148W-T-R-1190

 全新原装
BSC022N03LSG

Mfr.#: BSC022N03LSG

OMO.#: OMO-BSC022N03LSG-1190

 全新原装
BSC022N03S 30V,50A,FD100

Mfr.#: BSC022N03S 30V,50A,FD100

OMO.#: OMO-BSC022N03S-30V-50A-FD100-1190

 全新原装
BSC022N03S,MOSFET,30V,50

Mfr.#: BSC022N03S,MOSFET,30V,50

OMO.#: OMO-BSC022N03S-MOSFET-30V-50-1190

 全新原装
BSC025N03MS G

Mfr.#: BSC025N03MS G

OMO.#: OMO-BSC025N03MS-G-1190

 Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP
BSC026N08NS5

Mfr.#: BSC026N08NS5

OMO.#: OMO-BSC026N08NS5-1190

 POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 80V, 0.0026OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
BSC028N06LS3G

Mfr.#: BSC028N06LS3G

OMO.#: OMO-BSC028N06LS3G-1190

 23 A, 60 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET
BSC028N06LS3GATMA1

Mfr.#: BSC028N06LS3GATMA1

OMO.#: OMO-BSC028N06LS3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 100A TDSON-8
可用性
库存:
Available
订购:
5000
输入数量:
BSC026N02KS的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$0.00
US$0.00
10
US$0.00
US$0.00
100
US$0.00
US$0.00
500
US$0.00
US$0.00
1000
US$0.00
US$0.00
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