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MRFE6VP61K25HR6

MRFE6VP61K25HR6
Mfr. #:
MRFE6VP61K25HR6
制造商:
NXP / Freescale
描述:
RF MOSFET Transistors VHV6 1.25KW ISM NI1230H
生命周期:
制造商新产品。
数据表:
MRFE6VP61K25HR6 数据表
交货:
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ECAD Model:
更多信息:
MRFE6VP61K25HR6 更多信息
产品属性
属性值
制造商：
恩智浦
产品分类：
射频 MOSFET 晶体管
RoHS：
Y
晶体管极性：
N通道
技术：
硅
Id - 连续漏极电流：
10 uA
Vds - 漏源击穿电压：
133 V
获得：
24 dB
输出功率：
1.25 kW
最高工作温度：
+ 150 C
安装方式：
贴片/贴片
包装/案例：
NI-1230
打包：
卷轴
配置：
单身的
工作频率：
1.8 MHz, 600 MHz
系列：
MRFE6VP61K25H
类型：
射频功率MOSFET
品牌：
恩智浦/飞思卡尔
Pd - 功耗：
1.333 kW
产品类别：
射频 MOSFET 晶体管
出厂包装数量：
150
子类别：
MOSFET
Vgs - 栅源电压：
10 V
Vgs th - 栅源阈值电压：
2.2 V
第 # 部分别名：
935314411128
单位重量：
0.464036 oz
Tags
MRFE6VP61K25H, MRFE6VP61, MRFE6VP6, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787
***roFlash
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***nell
TRANSISTOR, RF, 133V, NI-1230H-4S; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.333kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230;
***W
RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827
***roFlash
RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
***nell
TRANSISTOR, RF, 133V, NI-780H-4L; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: NI-780; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: -; SVHC: No SVHC (15-Jan-2019)
***ark
LDMOS, RF, 100W, NI-780; Transistor Type:RF MOSFET; Drain Source Voltage Vds:133V DC; Power Dissipation Pd:100W; Operating Frequency Range:1.8MHz to 2GHz; Operating Temperature Min:-40°C; Operating Temperature Max:150°C
***W
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V, CFM4F, RoHS
***ark
RF POWER FET, N CH, 125V, NI-780-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; No. of Pins:4;RoHS Compliant: Yes
***W
RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V, CFM4F, RoHS
*** Source Electronics
FET RF 2CH 130V 230MHZ NI1230 / Trans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R
***ure Electronics
MRFE6VPx Series 130 V 230 MHz RF Power Field Effect Transistor - NI-1230
***nell
TRANSISTOR, RF, 130V, NI-1230-4; Drain Source Voltage Vds: 130VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.667kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230; N
***(Formerly Allied Electronics)
N-channel MOSFET Transistor 190 A 100 V 4-Pin SOT-227
***ical
Trans MOSFET N-CH 100V 190A 4-Pin SOT-227
*** Source Electronics
Power MOSFET, 190 A | MOSFET N-CH 100V 190A SOT227
***ukat
N-Ch 100V 190A 568W 0,0065R SOT227
***ronik
N-CH 100V 190A 6,5mOhm SOT-227
***ure Electronics
Output & SW Modules - ECONO IGBT-e3
***nell
MOSFET, N-CH, 100V, 190A, SOT-227; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:568W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-227; No. of Pins:4; MSL:-; Operating Temperature Range:-55°C to +150°C
***ure Electronics
N-Channel 125 V 389 W HF/VHF/UHF MOS Field-Effect RF Power Transistor-M174
***roFlash
Rf Fet Transistor, 125 V, 20 A, 389 W, 230 Mhz, M174 Rohs Compliant: Yes
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***el Electronic
TDK - CGA2B3X7S2A102K050BB - Keramikvielschichtkondensator, SMD, 1000 pF, 100 V, 0402 [Metrisch 1005], ± 10%, X7S, Baureihe CGA
***nell
MOSFET, RF, 150W, 125V, 20A, M174; Drain Source Voltage Vds: 125V; Continuous Drain Current Id: 20A; Power Dissipation Pd: 389W; Operating Frequency Min: -; Operating Frequency Max: 230MHz; RF Transistor Case: M174; No. of Pin
***r Electronics
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
STAC2942 Series 130 V 40 A 350 W 21 dB N-channel RF SMT Power Transistor
***el Electronic
TDK - CGA5L3X7R2E104K160AA - SMD flerskiktig keramisk kondensator, 0.1 µF, 250 V, 1206 [3216 Metrisk], ± 10%, X7R, CGA Serien
***nell
RF TRANSISTOR, 130V, 175MHZ, STAC244B; Drain Source Voltage Vds: 130V; Continuous Drain Current Id: 40A; Power Dissipation Pd: 625W; Operating Frequency Min: -; Operating Frequency Max: 175MHz; RF Transistor Case: STAC244B; No. of Pins: 4Pins; Operating Temperature Max: 200°C; Product Range: -; MSL: -; SVHC: No SVHC (07-Jul-2017)
MRF6Vx Lateral N-Ch Broadband RF Power MOSFETs
NXP's MRF6Vx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More
MRFE6VP61K25H Wideband RF Power LDMOS MOSFETs
NXP's MRFE6VP61K25H Wideband RF Power LDMOS MOSFETs are high ruggedness devices that are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. Features include devices can be used in either a single-ended or in a push-pull configuration, are suitable for linear application with appropriate biasing, and these devices have an integrated ESD protection with greater negative gate-source voltage range for improved Class C operation.Learn More
型号 制造商 描述 库存 价格
MRFE6VP61K25HR6
DISTI # V72:2272_07204232		NXP SemiconductorsTrans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R57
  • 25:$159.5000
  • 10:$163.4100
  • 1:$171.9700
MRFE6VP61K25HR6
DISTI # MRFE6VP61K25HR6CT-ND		NXP SemiconductorsFET RF 2CH 133V 230MHZ NI-1230
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		62In Stock
  • 10:$167.3400
  • 1:$174.7200
MRFE6VP61K25HR6
DISTI # MRFE6VP61K25HR6DKR-ND		NXP SemiconductorsFET RF 2CH 133V 230MHZ NI-1230
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		62In Stock
  • 10:$167.3400
  • 1:$174.7200
MRFE6VP61K25HR6
DISTI # MRFE6VP61K25HR6TR-ND		NXP SemiconductorsFET RF 2CH 133V 230MHZ NI-1230
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 150:$158.8818
MRFE6VP61K25HR6
DISTI # 29730020		NXP SemiconductorsTrans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R1685
  • 1:$324.0000
MRFE6VP61K25HR6
DISTI # 25767383		NXP SemiconductorsTrans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R57
  • 25:$159.5600
  • 10:$163.4700
  • 1:$172.0600
MRFE6VP61K25HR6
DISTI # 29002535		NXP SemiconductorsTrans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R15
  • 1:$324.0000
MRFE6VP61K25HR6
DISTI # MRFE6VP61K25HR6		NXP SemiconductorsTrans MOSFET N-CH 133V 4-Pin NI-1230H T/R (Alt: MRFE6VP61K25HR6)
RoHS: Compliant
Min Qty: 150
Container: Tape and Reel		Europe - 0
  • 150:€141.3900
  • 300:€140.8900
  • 600:€140.3900
  • 900:€139.8900
  • 1500:€139.4900
MRFE6VP61K25HR6
DISTI # MRFE6VP61K25HR6		NXP SemiconductorsTrans MOSFET N-CH 133V 4-Pin NI-1230H T/R - Tape and Reel (Alt: MRFE6VP61K25HR6)
RoHS: Compliant
Min Qty: 150
Container: Reel		Americas - 0
  • 150:$174.0900
  • 300:$167.2900
  • 600:$160.6900
  • 900:$154.8900
  • 1500:$151.8900
MRFE6VP61K25HR6
DISTI # MRFE6VP61K25HR6		NXP SemiconductorsTrans MOSFET N-CH 133V 4-Pin NI-1230H T/R (Alt: MRFE6VP61K25HR6)
RoHS: Compliant
Min Qty: 150
Container: Tape and Reel		Asia - 0
    MRFE6VP61K25HR6
    DISTI # 19T6331    		NXP SemiconductorsWideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V0
    • 1:$273.8300
    • 10:$268.0500
    • 25:$250.6900
    • 150:$221.7700
    MRFE6VP61K25HR6
    DISTI # 31AC6674    		NXP SemiconductorsTRANSISTOR, RF, 133V, NI-1230H-4S,Drain Source Voltage Vds:133VDC,Continuous Drain Current Id:-,Power Dissipation Pd:1.333kW,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,RF Transistor Case:NI-1230,No. of RoHS Compliant: Yes134
    • 1:$196.5400
    • 10:$185.9800
    • 25:$176.5000
    • 50:$170.6200
    • 100:$156.5500
    • 250:$151.9000
    • 500:$147.1600
    MRFE6VP61K25HR6
    DISTI # 841-MRFE6VP61K25HR6    		NXP SemiconductorsRF MOSFET Transistors VHV6 1.25KW ISM NI1230H
    RoHS: Compliant    		384
    • 1:$174.7200
    • 5:$170.8300
    • 10:$167.3400
    • 25:$164.8700
    • 50:$161.8800
    • 100:$160.3900
    • 150:$158.8900
    MRFE6VP61K25HR5
    DISTI # 841-MRFE6VP61K25HR5    		NXP SemiconductorsRF MOSFET Transistors VHV6 1.25KW ISM NI1230H
    RoHS: Compliant    		83
    • 1:$173.2100
    • 5:$169.0400
    • 10:$164.8500
    • 25:$162.5400
    • 50:$162.5400
    MRFE6VP61K25HR6Freescale Semiconductor 
    RoHS: Not Compliant    		35
    • 1000:$157.1800
    • 500:$165.4600
    • 100:$172.2600
    • 25:$179.6400
    • 1:$193.4600
    MRFE6VP61K25HR6
    DISTI # MRFE6VP61K25HR6    		NXP SemiconductorsRF POWER TRANSISTOR
    RoHS: Compliant    		6980
    • 1:$164.6600
    • 10:$160.3200
    • 25:$158.2400
    MRFE6VP61K25HR6
    DISTI # 2776247    		NXP SemiconductorsTRANSISTOR, RF, 133V, NI-1230H-4S
    RoHS: Compliant    		137
    • 1:£180.0000
    • 5:£149.0000
    MRFE6VP61K25HR6
    DISTI # C1S537101512836    		NXP SemiconductorsTrans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R
    RoHS: Compliant    		67
    • 25:$159.5600
    • 10:$163.4700
    • 1:$172.0600
    MRFE6VP61K25HR6
    DISTI # C1S233100254455    		NXP SemiconductorsTrans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R
    RoHS: Compliant    		15
    • 10:$306.0000
    • 5:$313.0000
    • 1:$367.0000
    MRFE6VP61K25HR6
    DISTI # 2776247    		NXP SemiconductorsTRANSISTOR, RF, 133V, NI-1230H-4S
    RoHS: Compliant    		134
    • 1:$285.4400
    • 5:$275.9200
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    可用性
    库存:
    264
    订购:
    2247
    输入数量:
    MRFE6VP61K25HR6的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$174.72
    US$174.72
    5
    US$170.83
    US$854.15
    10
    US$167.34
    US$1 673.40
    25
    US$164.87
    US$4 121.75
    50
    US$161.88
    US$8 094.00
    100
    US$160.39
    US$16 039.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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