NSBC123EPDXV6T1G

NSBC123EPDXV6T1G
Mfr. #:
NSBC123EPDXV6T1G
制造商:
ON Semiconductor
描述:
Bipolar Transistors - Pre-Biased SSP SOT563 DUAL 2.2/2.2K
生命周期:
制造商新产品。
数据表:
NSBC123EPDXV6T1G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBC123EPDXV6T1G DatasheetNSBC123EPDXV6T1G Datasheet (P4-P6)NSBC123EPDXV6T1G Datasheet (P7)
ECAD Model:
产品属性
属性值
制造商:
安森美半导体
产品分类:
双极晶体管 - 预偏置
RoHS:
Y
配置:
双重的
晶体管极性:
NPN, PNP
典型输入电阻:
2.2 kOhms
典型电阻比:
1
安装方式:
贴片/贴片
包装/案例:
SOT-563-6
DC 集电极/基极增益 hfe 最小值:
8
集电极-发射极电压 VCEO 最大值:
50 V
连续集电极电流:
100 mA
峰值直流集电极电流:
100 mA
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
系列:
NSBC123EPDXV6
打包:
卷轴
高度:
0.55 mm
长度:
1.6 mm
宽度:
1.2 mm
品牌:
安森美半导体
通道数:
2 Channel
产品类别:
BJT - 双极晶体管 - 预偏置
出厂包装数量:
4000
子类别:
晶体管
单位重量:
0.000106 oz
Tags
NSBC123E, NSBC123, NSBC12, NSBC, NSB
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-563 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***emi
50V Dual Bipolar Digital Transistor
***ark
Brt Transistor, 50V, 2.2K/2.2K, Sot563; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
***emi
50V Dual PNP Bipolar Digital Transistor
***ponent Stockers USA
100 mA 50 V 2 CHANNEL PNP Si SMALL SIGNAL TRANSISTOR
***ark
Brt Transistor, 50V, 2.2K/2.2K, Sot-563; Transistor Polarity:dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
***emi
50V Dual NPN Bipolar Digital Transistor
***Yang
Trans Digital BJT NPN 50V 0.1A 6-Pin SOT-563 T/R - Tape and Reel
***ponent Stockers USA
100 mA 50 V 2 CHANNEL NPN Si SMALL SIGNAL TRANSISTOR
***ark
Brt Transistor, 50V, 2.2K/2.2K, Sot563; Transistor Polarity:dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ure Electronics
Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
***emi
Complementary Bipolar Digital Transistor (BRT)
***ment14 APAC
Transistor, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes
***nell
TRANS, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***th Star Micro
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series two complementary BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium.
型号 制造商 描述 库存 价格
NSBC123EPDXV6T1G
DISTI # NSBC123EPDXV6T1GOS-ND
ON SemiconductorTRANS PREBIAS NPN/PNP SOT563
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Limited Supply - Call
    NSBC123EPDXV6T1G
    DISTI # NSBC123EPDXV6T1G
    ON SemiconductorTrans Digital BJT NPN/PNP 50V 0.1A 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSBC123EPDXV6T1G)
    RoHS: Compliant
    Min Qty: 8000
    Container: Reel
    Americas - 0
    • 8000:$0.0779
    • 16000:$0.0769
    • 24000:$0.0759
    • 40000:$0.0749
    • 80000:$0.0739
    NSBC123EPDXV6T1G
    DISTI # 42K2335
    ON SemiconductorBRT TRANSISTOR, 50V, 2.2K/2.2K, SOT563,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:2.2kohm,Base-Emitter Resistor R2:2.2kohm,Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes0
    • 1:$0.1200
    NSBC123EPDXV6T1G
    DISTI # 49X8965
    ON SemiconductorBRT TRANSISTOR, 50V, 2.2K/2.2K, SOT563,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:2.2kohm,Base-Emitter Resistor R2:2.2kohm,Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes0
    • 1:$0.4030
    • 25:$0.3090
    • 50:$0.2580
    • 100:$0.2160
    • 250:$0.1820
    • 500:$0.1550
    • 1000:$0.1260
    • 2500:$0.1070
    NSBC123EPDXV6T1G
    DISTI # 863-NSBC123EPDXV6T1G
    ON SemiconductorBipolar Transistors - Pre-Biased SSP SOT563 DUAL 2.2/2.2K
    RoHS: Compliant
    0
    • 1:$0.3500
    • 10:$0.2660
    • 100:$0.1440
    • 1000:$0.1080
    • 4000:$0.0930
    • 8000:$0.0870
    • 24000:$0.0800
    • 48000:$0.0770
    • 100000:$0.0740
    NSBC123EPDXV6T1GON Semiconductor 
    RoHS: Not Compliant
    100000
    • 1000:$0.0900
    • 100:$0.1000
    • 500:$0.1000
    • 1:$0.1100
    • 25:$0.1100
    图片 型号 描述
    NSBC123EDXV6T1G

    Mfr.#: NSBC123EDXV6T1G

    OMO.#: OMO-NSBC123EDXV6T1G

    Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
    NSBC123EPDXV6T1G

    Mfr.#: NSBC123EPDXV6T1G

    OMO.#: OMO-NSBC123EPDXV6T1G

    Bipolar Transistors - Pre-Biased SSP SOT563 DUAL 2.2/2.2K
    NSBC123EF3T5G

    Mfr.#: NSBC123EF3T5G

    OMO.#: OMO-NSBC123EF3T5G

    Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
    NSBC123EPDXV6T1

    Mfr.#: NSBC123EPDXV6T1

    OMO.#: OMO-NSBC123EPDXV6T1

    Bipolar Transistors - Pre-Biased 100mA Complementary
    NSBC123EDXV6T1

    Mfr.#: NSBC123EDXV6T1

    OMO.#: OMO-NSBC123EDXV6T1-ON-SEMICONDUCTOR

    TRANS 2NPN PREBIAS 0.5W SOT563
    NSBC123EDXV6T1G

    Mfr.#: NSBC123EDXV6T1G

    OMO.#: OMO-NSBC123EDXV6T1G-ON-SEMICONDUCTOR

    TRANS 2NPN PREBIAS 0.5W SOT563
    NSBC123EPDXV6T1

    Mfr.#: NSBC123EPDXV6T1

    OMO.#: OMO-NSBC123EPDXV6T1-ON-SEMICONDUCTOR

    TRANS PREBIAS NPN/PNP SOT563
    NSBC123EF3T5G

    Mfr.#: NSBC123EF3T5G

    OMO.#: OMO-NSBC123EF3T5G-ON-SEMICONDUCTOR

    Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
    NSBC123EPDXV6T1G

    Mfr.#: NSBC123EPDXV6T1G

    OMO.#: OMO-NSBC123EPDXV6T1G-ON-SEMICONDUCTOR

    Bipolar Transistors - Pre-Biased SSP SOT563 DUAL 2.2/2.2K
    可用性
    库存:
    Available
    订购:
    1991
    输入数量:
    NSBC123EPDXV6T1G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$0.35
    US$0.35
    10
    US$0.27
    US$2.66
    100
    US$0.14
    US$14.40
    1000
    US$0.11
    US$108.00
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