IPI65R150CFDXKSA1

IPI65R150CFDXKSA1
Mfr. #:
IPI65R150CFDXKSA1
制造商:
Infineon Technologies
描述:
RF Bipolar Transistors MOSFET N-Ch 700V 72A I2PAK-3
生命周期:
制造商新产品。
数据表:
IPI65R150CFDXKSA1 数据表
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产品属性
属性值
制造商
英飞凌科技
产品分类
晶体管 - FET、MOSFET - 单
系列
IPI65R150
打包
管子
部分别名
IPI65R150CFD IPI65R150CFDXK SP000907028
单位重量
0.073511 oz
商品名
酷摩
包装盒
TO-262-3
技术
通道数
1 Channel
晶体管型
1 N-Channel
Id 连续漏极电流
72 A
Vds-漏-源-击穿电压
700 V
Rds-On-Drain-Source-Resistance
150 mOhms
晶体管极性
N通道
Tags
IPI65R1, IPI65, IPI6, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 700V 22.4A 3-Pin(3+Tab) TO-262
***i-Key
MOSFET N-CH 650V 22.4A TO-262
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
型号 制造商 描述 库存 价格
IPI65R150CFDXKSA1
DISTI # IPI65R150CFDXKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 22.4A TO-262
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
  • 500:$2.2182
IPI65R150CFDXKSA1
DISTI # SP000907028
Infineon Technologies AGTrans MOSFET N-CH 700V 22.4A 3-Pin(3+Tab) TO-262 (Alt: SP000907028)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.5900
  • 10:€1.4900
  • 25:€1.4900
  • 50:€1.3900
  • 100:€1.3900
  • 500:€1.3900
  • 1000:€1.3900
IPI65R150CFDXKSA1Infineon Technologies AGPower Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant
13500
  • 1000:$1.5900
  • 500:$1.6800
  • 100:$1.7500
  • 25:$1.8200
  • 1:$1.9600
IPI65R150CFDXKSA1
DISTI # 726-IPI65R150CFDXKSA
Infineon Technologies AGMOSFET N-Ch 700V 72A I2PAK-3
RoHS: Compliant
0
    图片 型号 描述
    IPI65R150CFD

    Mfr.#: IPI65R150CFD

    OMO.#: OMO-IPI65R150CFD-1190

    Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    IPI65R150CFDXKSA1

    Mfr.#: IPI65R150CFDXKSA1

    OMO.#: OMO-IPI65R150CFDXKSA1-INFINEON-TECHNOLOGIES

    RF Bipolar Transistors MOSFET N-Ch 700V 72A I2PAK-3
    可用性
    库存:
    Available
    订购:
    3500
    输入数量:
    IPI65R150CFDXKSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$2.24
    US$2.24
    10
    US$2.12
    US$21.23
    100
    US$2.01
    US$201.15
    500
    US$1.90
    US$949.90
    1000
    US$1.79
    US$1 788.00
    由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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