SIS412DN-T1-GE3

Mfr. #:: SIS412DN-T1-GE3
制造商:: Vishay
描述:: MOSFET N-CH 30V 12A 1212-8 PPAK
生命周期:: 制造商新产品。
数据表:: SIS412DN-T1-GE3 数据表
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更多信息:: SIS412DN-T1-GE3 更多信息

产品属性
属性值

制造商: 威世硅

产品分类: 集成电路芯片

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SIS412DN-GE3

安装方式: 贴片/贴片

包装盒: PowerPAKR 1212-8

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: PowerPAKR 1212-8

配置: 单四漏三源

FET型: MOSFET N 沟道，金属氧化物

最大功率: 15.6W

晶体管型: 1 N-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: 435pF @ 15V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 12A (Tc)

Rds-On-Max-Id-Vgs: 24 mOhm @ 7.8A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

栅极电荷-Qg-Vgs: 12nC @ 10V

钯功耗: 3.2 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 10 ns

上升时间: 12 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 12 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 24 mOhms

晶体管极性: N通道

典型关断延迟时间: 15 ns

典型开启延迟时间: 15 ns

正向跨导最小值: 17 S

通道模式: 增强

Tags: SIS412DN-T1-GE3, SIS412DN-T1-G, SIS412DN-T1, SIS412DN-T, SIS412D, SIS412, SIS41, SIS4, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS412DN-T1-GE3 描述

***ure Electronics: SiS412DN Series N-Channel 30 V 24 mOhms SMT Power Mosfet - PowerPAK-1212-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:12A; On Resistance Rds(On):0.02Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; No. Of Pins:8Pinsrohs Compliant: No

***ment14 APAC: MOSFET, N-CH, 30V, 12A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:15.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:15.6W; Voltage Vgs Max:20V

SIS412DN-T1-GE3 更多信息

TrenchFET® Gen III Power MOSFET: The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Market price

型号	制造商	描述	库存	价格
SIS412DN-T1-GE3 DISTI # V36:1790_07433130	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	39000	3000:$0.2134
SIS412DN-T1-GE3 DISTI # V72:2272_07433130	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	4134	3000:$0.2061 1000:$0.2232 500:$0.2668 250:$0.3099 100:$0.3109 25:$0.3807 10:$0.3822 1:$0.4481
SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 12A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	61677In Stock	1000:$0.2719 500:$0.3399 100:$0.4589 10:$0.5950 1:$0.6800
SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 12A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	61677In Stock	1000:$0.2719 500:$0.3399 100:$0.4589 10:$0.5950 1:$0.6800
SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 12A 1212-8 PPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	60000In Stock	3000:$0.2392
SIS412DN-T1-GE3 DISTI # 30544025	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	39000	3000:$0.2134
SIS412DN-T1-GE3 DISTI # 30214242	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	9000	3000:$0.2521
SIS412DN-T1-GE3 DISTI # 29055604	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	4134	3000:$0.2061 1000:$0.2232 500:$0.2668 250:$0.3099 100:$0.3109 31:$0.3807
SIS412DN-T1-GE3 DISTI # 30605326	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	2978	1000:$0.3417 500:$0.4322 100:$0.4437 50:$0.5419 32:$0.8135
SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS412DN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 3000	3000:$0.2179 6000:$0.2109 12000:$0.2029 18000:$0.1969 30000:$0.1919
SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R (Alt: SIS412DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 3000	3000:$2.4200 6000:$1.6690 9000:$1.2410 15000:$1.0083 30000:$0.9132 75000:$0.8800 150000:$0.8491
SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R (Alt: SIS412DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.4999 6000:€0.3409 12000:€0.2929 18000:€0.2709 30000:€0.2519
SIS412DN-T1-GE3 DISTI # 55R1906	Vishay Intertechnologies	MOSFET, N CHANNEL, 40V, 12A, POWERPAK8,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:40V,On Resistance Rds(on):20mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,No. of Pins:8, RoHS Compliant: Yes	12853	1:$0.7160 10:$0.6330 25:$0.5880 50:$0.5430 100:$0.4990 500:$0.3810 1000:$0.3140
SIS412DN-T1-GE3. DISTI # 15AC0289	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:15.6W,No. of Pins:8Pins , RoHS Compliant: No	3000	1:$0.2180 3000:$0.2110 6000:$0.2030 12000:$0.1960 18000:$0.1920 30000:$0.1880
SIS412DN-T1-GE3 DISTI # 70459588	Vishay Siliconix	MOSFET N-CH 30V 12A 1212-8 PPAK RoHS: Compliant	0	3000:$0.6670 6000:$0.5120
SIS412DN-T1-GE3 DISTI # 781-SIS412DN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	41611	1:$0.6000 10:$0.4790 100:$0.3640 500:$0.3000 1000:$0.2400 3000:$0.2180 6000:$0.2030 9000:$0.1960 24000:$0.1880
SIS412DN-T1-GE3	Vishay Siliconix	POWER FIELD-EFFECT TRANSISTOR, 8.7A I(D), 30V, 0.024OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	800	201:$0.2100 45:$0.3000 1:$0.6000
SIS412DN-T1-GE3	Vishay Intertechnologies		2375
SIS412DNT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SIS412DN-T1-GE3	Vishay Intertechnologies	INSTOCK	611
SIS412DN-T1-GE3 DISTI # 1779238	Vishay Intertechnologies	MOSFET, N-CH, 30V, 12A, POWERPAK8 RoHS: Compliant	13032	1:$0.9500 10:$0.7590 100:$0.5770 500:$0.4750 1000:$0.3810 3000:$0.3460 6000:$0.3400
SIS412DN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	Americas - 6000	3000:$0.2150 6000:$0.2030 12000:$0.1970 24000:$0.1940
SI7804DN-T1-E3	Vishay Intertechnologies	MOSFET 30V 10A 0.0185Ohm	Americas -
SIS412DN-T1-GE3 DISTI # C1S804000723543	Vishay Intertechnologies	MOSFETs RoHS: Compliant	4134	250:$0.3109 100:$0.3118 25:$0.3822 10:$0.3840
SIS412DN-T1-GE3 DISTI # C1S806001139235	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2978	1000:$0.2680 500:$0.3390 100:$0.3480 50:$0.4250 10:$0.6380
SIS412DN-T1-GE3 DISTI # C1S803601813916	Vishay Intertechnologies	MOSFETs RoHS: Compliant	39000	3000:$0.2134
SIS412DN-T1-GE3 DISTI # 1779238	Vishay Intertechnologies	MOSFET, N-CH, 30V, 12A, POWERPAK8 RoHS: Compliant	13603	5:£0.4180 25:£0.3920 100:£0.2810 250:£0.2570 500:£0.2320

图片	型号	描述
	Mfr.#: SIS412DN-T1-GE3 OMO.#: OMO-SIS412DN-T1-GE3	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SIS412DN-T1-GE3-CUT TAPE OMO.#: OMO-SIS412DN-T1-GE3-CUT-TAPE-1190	全新原装
	Mfr.#: SIS412DN OMO.#: OMO-SIS412DN-1190	全新原装
	Mfr.#: SIS412DN-T1 OMO.#: OMO-SIS412DN-T1-1190	全新原装
	Mfr.#: SIS412DN-T1-E3 OMO.#: OMO-SIS412DN-T1-E3-1190	全新原装
	Mfr.#: SIS412DN-T1-GE OMO.#: OMO-SIS412DN-T1-GE-1190	全新原装
	Mfr.#: SIS412DN-T1-GE3 OMO.#: OMO-SIS412DN-T1-GE3-VISHAY	MOSFET N-CH 30V 12A 1212-8 PPAK
	Mfr.#: SIS412DN-T1-GE3 QFN8 OMO.#: OMO-SIS412DN-T1-GE3-QFN8-1190	全新原装
	Mfr.#: SIS412DN-T1-GE3-W OMO.#: OMO-SIS412DN-T1-GE3-W-1190	全新原装
	Mfr.#: SIS412DN-TI-GE3 OMO.#: OMO-SIS412DN-TI-GE3-1190	全新原装

SIS412DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes