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RQ3E100MNTB1

RQ3E100MNTB1
Mfr. #:
RQ3E100MNTB1
制造商:
Rohm Semiconductor
描述:
MOSFET
生命周期:
制造商新产品。
数据表:
RQ3E100MNTB1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
罗姆半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
HSMT-8
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
30 V
Id - 连续漏极电流：
10 A
Rds On - 漏源电阻：
8.8 mOhms
Vgs th - 栅源阈值电压：
2.5 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
9.9 nC
Pd - 功耗：
2 W
配置：
单身的
打包：
卷轴
晶体管类型：
1 N-Channel
品牌：
罗姆半导体
秋季时间：
6 ns
产品类别：
MOSFET
上升时间：
17 ns
出厂包装数量：
3000
子类别：
MOSFET
典型关断延迟时间：
31 ns
典型的开启延迟时间：
7 ns
Tags
RQ3E100M, RQ3E10, RQ3E1, RQ3E, RQ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hard Electronics
MOSFET N-CH 30V 10A HSMT8
***ark
MOSFET Transistor, P Channel, -12 A, -30 V, 10 mohm, -10 V, -1.8 V
***ure Electronics
Single P-Channel 30 V 19.7 mOhm 52 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***nell
MOSFET,P CH,30V,12A,SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.8V; Power D
***(Formerly Allied Electronics)
IRF8707TRPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC
*** Electronics
In a Pack of 10, IRF8707PBF N-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon
***ure Electronics
Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC
***ark
N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***Yang
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
***emi
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ
***ure Electronics
N-Channel 30 V 9.5 mOhm Surface Mount Logic Level PowerTrench Mosfet -SOIC-8
***et Europe
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS6680A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
*** Source Electronics
MOSFET P-CH 30V 19.7A 8-SOIC / Trans MOSFET P-CH 30V 19.7A 8-Pin SOIC N T/R
***ure Electronics
SI4425DDY Series 30 V 9.8 mOhm 80 nC P-Channel Surface Mount Mosfet - SOIC-8
***ment14 APAC
MOSFET, P-CH, 30V, 19.7A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-19.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):8.1mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-19.7A; Power Dissipation Pd:5.7W; Voltage Vgs Max:20V
***eco
Transistor MOSFET Negative Channel 30 Volt 13A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.011Ohm;ID 13A;SO-8;PD 2.5W;VGS +/-20V;VF 1
***ure Electronics
Single N-Channel 30 V 0.011 Ohm 52 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
***ical
Trans MOSFET N-CH 30V 13A 8-Pin SOIC Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***el Electronic
Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-SOIC (0.154, 3.90mm Width) Surface Mount MOSFET (Metal Oxide) N-Channel Tube 11m Ω @ 7.3A, 10V 13A Ta -55°C~150°C TJ MOSFET N-CH 30V 13A 8-SOIC
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipat
***emi
N-Channel Fast Switching PowerTrench® MOSFET, 30V, 13A, 11.3mΩ
***et Europe
Trans MOSFET N-CH 30V 13A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:13A; Package / Case:SOIC-8; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
型号 制造商 描述 库存 价格
RQ3E100MNTB1
DISTI # RQ3E100MNTB1TR-ND		ROHM SemiconductorMOSFET N-CH 30V 10A HSMT8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.4200
RQ3E100MNTB1
DISTI # RQ3E100MNTB1CT-ND		ROHM SemiconductorMOSFET N-CH 30V 10A HSMT8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2428In Stock
  • 1000:$0.4635
  • 500:$0.5871
  • 100:$0.7571
  • 10:$0.9580
  • 1:$1.0800
RQ3E100MNTB1
DISTI # RQ3E100MNTB1DKR-ND		ROHM SemiconductorMOSFET N-CH 30V 10A HSMT8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    RQ3E100MNTB1
    DISTI # RQ3E100MNTB1    		ROHM SemiconductorRQ3E100MNTB1 - Tape and Reel (Alt: RQ3E100MNTB1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.2819
    • 18000:$0.2899
    • 12000:$0.3069
    • 6000:$0.3259
    • 3000:$0.3479
    RQ3E100MNTB1
    DISTI # 755-RQ3E100MNTB1    		ROHM SemiconductorMOSFET
    RoHS: Compliant    		0
      RQ3E100MNTB1ROHM Semiconductor 3000
      • 1:¥23.4681
      • 100:¥12.2738
      • 1000:¥6.7015
      • 1500:¥4.5436
      • 3000:¥3.3850
      图片 型号 描述
      RQ3E100ATTB

      Mfr.#: RQ3E100ATTB

      OMO.#: OMO-RQ3E100ATTB

      		 MOSFET PCH -30V -31A POWER
      RQ3E100MNTB1

      Mfr.#: RQ3E100MNTB1

      OMO.#: OMO-RQ3E100MNTB1

      		 MOSFET
      RQ3E100BN

      Mfr.#: RQ3E100BN

      OMO.#: OMO-RQ3E100BN-1190

      		 全新原装
      RQ3E100BNFU7TB

      Mfr.#: RQ3E100BNFU7TB

      OMO.#: OMO-RQ3E100BNFU7TB-1190

      		 全新原装
      RQ3E100BNTB1

      Mfr.#: RQ3E100BNTB1

      OMO.#: OMO-RQ3E100BNTB1-1190

      		 全新原装
      RQ3E100MN

      Mfr.#: RQ3E100MN

      OMO.#: OMO-RQ3E100MN-1190

      		 全新原装
      RQ3E100MNFU

      Mfr.#: RQ3E100MNFU

      OMO.#: OMO-RQ3E100MNFU-1190

      		 全新原装
      RQ3E100MNFU7TB1

      Mfr.#: RQ3E100MNFU7TB1

      OMO.#: OMO-RQ3E100MNFU7TB1-1190

      		 全新原装
      RQ3E100MNTB

      Mfr.#: RQ3E100MNTB

      OMO.#: OMO-RQ3E100MNTB-1190

      		 全新原装
      RQ3E100MNTB1

      Mfr.#: RQ3E100MNTB1

      OMO.#: OMO-RQ3E100MNTB1-ROHM-SEMI

      		 MOSFET N-CH 30V 10A HSMT8
      可用性
      库存:
      Available
      订购:
      5500
      输入数量:
      RQ3E100MNTB1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$0.99
      US$0.99
      10
      US$0.84
      US$8.40
      100
      US$0.65
      US$64.60
      500
      US$0.57
      US$285.50
      1000
      US$0.45
      US$450.00
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