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IRFR4105ZTRPBF

IRFR4105ZTRPBF
Mfr. #:
IRFR4105ZTRPBF
制造商:
Infineon Technologies
描述:
MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg
生命周期:
制造商新产品。
数据表:
IRFR4105ZTRPBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFR4105ZTRPBF DatasheetIRFR4105ZTRPBF Datasheet (P4-P6)IRFR4105ZTRPBF Datasheet (P7-P9)IRFR4105ZTRPBF Datasheet (P10-P11)
ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-252-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
55 V
Id - 连续漏极电流：
30 A
Rds On - 漏源电阻：
24.5 mOhms
Vgs th - 栅源阈值电压：
4 V
Qg - 门电荷：
27 nC
最高工作温度：
+ 175 C
Pd - 功耗：
48 W
配置：
单身的
打包：
卷轴
高度：
2.3 mm
长度：
6.5 mm
晶体管类型：
1 N-Channel
宽度：
6.22 mm
品牌：
英飞凌科技
正向跨导 - 最小值：
16 S
秋季时间：
24 ns
产品类别：
MOSFET
上升时间：
40 ns
出厂包装数量：
2000
子类别：
MOSFET
第 # 部分别名：
SP001557018
单位重量：
0.139332 oz
Tags
IRFR4105ZTRP, IRFR4105ZT, IRFR4105Z, IRFR4105, IRFR41, IRFR4, IRFR, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 30 A, 55 V, 24.5 Mohm, 10 V, 4 V Rohs Compliant: Yes
***ure Electronics
Single N-Channel 55 V 24.5 mOhm 18 nC HEXFET® Power Mosfet - TO-252AA
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 19 Milliohms,ID 30A,D-Pak (TO-252AA),PD 48W
*** Source Electronics
Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) | MOSFET N-CH 55V 30A DPAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***icontronic
Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***nell
MOSFET, N, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0245ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P
***ineon SCT
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
***ure Electronics
Single N-Channel 55 V 24.5 mOhm 27 nC Automotive HEXFET® Power Mosfet - DPAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ment14 APAC
MOSFET,N CH,55V,30A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:48W; Voltage Vgs Max:20V
***ineon SCT
55V, N-Ch, 23 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS
***roFlash
Power Field-Effect Transistor, 30A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***ure Electronics
N-Channel 60 V 21 mOhm Surface Mount PowerTrench Mosfet TO-252-3
*** Source Electronics
Trans MOSFET N-CH 60V 38A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 8.5A D-PAK
***emi
N-Channel PowerTrench® MOSFET, 38A, 21mΩ
***r Electronics
Power Field-Effect Transistor, 38A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ark
MOSFET; Transistor Type:MOSFET; Continuous Drain Current, Id:8.5A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.017ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.4V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
***emi
N-Channel PowerTrench® MOSFET, 60V, 36A, 26mΩ
***ical
Trans MOSFET N-CH 60V 7A Automotive 3-Pin(2+Tab) TO-252AA T/R
*** Electronic Components
MOSFET 60V N-CHAN PwrTrench 60V 36A 26mOhm
***r Electronics
Power Field-Effect Transistor, 7A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***or
MOSFET N-CH 60V 7A/36A TO252AA
***ark
NMOS DPAK 60V 26 MOHM / REEL ROHS COMPLIANT: YES
***el Electronic
SENSOR PROX INDUCTIVE 9.6MM CYL
***r Electronics
Power Field-Effect Transistor, 36A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
***icroelectronics
P-channel 40 V, 0.0175 Ohm typ., 36 A STripFET F6 in a DPAK package
***nell
MOSFET, P-CH, -40V, -36A, 60W, TO-252; Transistor Polarity: P Channel; Continuous Drain Current Id: -36A; Drain Source Voltage Vds: -40V; On Resistance Rds(on): 0.0175ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET F6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***(Formerly Allied Electronics)
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.045Ohm; ID 27A; D-Pak (TO-252AA); PD 68W
***ure Electronics
Single N-Channel 55V 0.045 Ohm 34 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:27A; On Resistance Rds(On):0.045Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ure Electronics
Single N-Channel 60 V 0.022 Ohms Surface Mount Power Mosfet - TO-252
***p One Stop
Trans MOSFET N-CH 60V 25A Automotive 3-Pin(2+Tab) DPAK
***nell
MOSFET,N CH,W DIODE,60V,25A,TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 62W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Voltage Vgs Max: 20V
型号 制造商 描述 库存 价格
IRFR4105ZTRPBF
DISTI # V36:1790_13891653		Infineon Technologies AGTrans MOSFET N-CH Si 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2000
  • 20000000:$0.3073
  • 200000:$0.3386
  • 2000:$0.4050
IRFR4105ZTRPBF
DISTI # V72:2272_13891653		Infineon Technologies AGTrans MOSFET N-CH Si 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		999
  • 500:$0.4767
  • 250:$0.5094
  • 100:$0.5263
  • 25:$0.6383
  • 10:$0.6410
  • 1:$0.7197
IRFR4105ZTRPBF
DISTI # IRFR4105ZTRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 55V 30A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		11551In Stock
  • 1000:$0.5212
  • 500:$0.6458
  • 100:$0.8172
  • 10:$1.0200
  • 1:$1.1400
IRFR4105ZTRPBF
DISTI # IRFR4105ZTRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 55V 30A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		11551In Stock
  • 1000:$0.5212
  • 500:$0.6458
  • 100:$0.8172
  • 10:$1.0200
  • 1:$1.1400
IRFR4105ZTRPBF
DISTI # IRFR4105ZTRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 55V 30A DPAK
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		10000In Stock
  • 2000:$0.4758
IRFR4105ZTRPBF
DISTI # 31087049		Infineon Technologies AGTrans MOSFET N-CH Si 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		6000
  • 2000:$0.4752
IRFR4105ZTRPBF
DISTI # 30611315		Infineon Technologies AGTrans MOSFET N-CH Si 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2000
  • 1000:$0.4552
  • 500:$0.5177
  • 100:$0.6120
  • 50:$0.7471
  • 23:$1.1220
IRFR4105ZTRPBF
DISTI # 31016500		Infineon Technologies AGTrans MOSFET N-CH Si 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		999
  • 500:$0.4767
  • 250:$0.5094
  • 100:$0.5263
  • 25:$0.6383
  • 23:$0.6410
IRFR4105ZTRPBF
DISTI # IRFR4105ZTRPBF		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK T/R (Alt: IRFR4105ZTRPBF)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel		Asia - 0
    IRFR4105ZTRPBF
    DISTI # IRFR4105ZTRPBF    		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR4105ZTRPBF)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel    		Americas - 0
    • 2000:$0.3169
    • 4000:$0.3049
    • 8000:$0.2939
    • 12000:$0.2839
    • 20000:$0.2789
    IRFR4105ZTRPBF
    DISTI # SP001557018    		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK T/R (Alt: SP001557018)
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape and Reel    		Europe - 0
    • 2000:€0.3769
    • 4000:€0.3089
    • 8000:€0.2829
    • 12000:€0.2609
    • 20000:€0.2419
    IRFR4105ZTRPBF
    DISTI # 13AC9140    		Infineon Technologies AGMOSFET, N-CH, 55V, 30A, TO-252AA,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes917
    • 1:$1.1500
    • 10:$0.9910
    • 25:$0.9190
    • 50:$0.8480
    • 100:$0.7760
    • 250:$0.7340
    • 500:$0.6920
    • 1000:$0.5590
    IRFR4105ZTRPBF
    DISTI # 70019018    		Infineon Technologies AGIRFR4105ZTRPBF N-channel MOSFET Transistor,30 A,55 V,3-Pin TO-252AA
    RoHS: Compliant    		0
    • 2000:$1.1300
    IRFR4105ZTRPBF
    DISTI # 942-IRFR4105ZTRPBF    		Infineon Technologies AGMOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg
    RoHS: Compliant    		5807
    • 1:$0.9700
    • 10:$0.8240
    • 100:$0.6330
    • 500:$0.5590
    • 1000:$0.4410
    • 2000:$0.3920
    • 10000:$0.3770
    IRFR4105ZTRPBFInternational Rectifier 943
      IRFR4105ZTRPBF
      DISTI # 8274066P      		Infineon Technologies AGHEXFET N-CH MOSFET 30A 55V DPAK, RL3985
      • 100:£0.4750
      • 500:£0.4060
      • 1000:£0.3180
      • 2000:£0.2940
      IRFR4105ZTRPBF
      DISTI # IRFR4105ZPBF-GURT      		Infineon Technologies AGN-Ch 55V 30A 48W 0,0245R TO252AA
      RoHS: Compliant      		3450
      • 50:€0.3015
      • 100:€0.2615
      • 500:€0.2415
      • 3000:€0.2325
      IRFR4105ZTRPBF
      DISTI # C1S322000493555      		Infineon Technologies AGTrans MOSFET N-CH Si 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
      RoHS: Compliant      		2000
      • 2000:$0.3530
      • 1000:$0.3570
      • 500:$0.4060
      • 100:$0.4800
      • 50:$0.5860
      • 10:$0.8800
      IRFR4105ZTRPBF
      DISTI # C1S322000493564      		Infineon Technologies AGTrans MOSFET N-CH Si 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
      RoHS: Compliant      		999
      • 250:$0.5094
      • 100:$0.5263
      • 25:$0.6383
      • 10:$0.6410
      IRFR4105ZTRPBF
      DISTI # 2725969      		Infineon Technologies AGMOSFET, N-CH, 55V, 30A, TO-252AA
      RoHS: Compliant      		917
      • 1:$1.2500
      • 10:$1.0900
      • 100:$0.8910
      • 500:$0.7520
      • 1000:$0.6510
      IRFR4105ZTRPBF
      DISTI # XSFP00000108891      		Infineon Technologies AG 
      RoHS: Compliant      		2692
      • 2000:$0.6000
      • 2692:$0.5455
      IRFR4105ZTRPBF
      DISTI # 2725969      		Infineon Technologies AGMOSFET, N-CH, 55V, 30A, TO-252AA
      RoHS: Compliant      		957
      • 5:£0.6300
      • 25:£0.5570
      • 100:£0.4840
      • 250:£0.4490
      • 500:£0.4140
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      可用性
      库存:
      Available
      订购:
      1986
      输入数量:
      IRFR4105ZTRPBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$0.90
      US$0.90
      10
      US$0.77
      US$7.70
      100
      US$0.59
      US$59.20
      500
      US$0.52
      US$261.50
      1000
      US$0.41
      US$413.00
      由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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