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IPP65R110CFDAAKSA1

IPP65R110CFDAAKSA1
Mfr. #:
IPP65R110CFDAAKSA1
制造商:
Infineon Technologies
描述:
MOSFET N-Ch 650V 31.2A TO220-3
生命周期:
制造商新产品。
数据表:
IPP65R110CFDAAKSA1 数据表
交货:
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支付:
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ECAD Model:
更多信息:
IPP65R110CFDAAKSA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
650 V
Id - 连续漏极电流：
31.2 A
Rds On - 漏源电阻：
110 mOhms
配置：
单身的
商品名：
酷摩
打包：
管子
高度：
15.65 mm
长度：
10 mm
系列：
CoolMOS CFDA
晶体管类型：
1 N-Channel
宽度：
4.4 mm
品牌：
英飞凌科技
产品类别：
MOSFET
出厂包装数量：
500
子类别：
MOSFET
第 # 部分别名：
IPP65R110CFDA IPP65R11CFDAXK SP000895234
单位重量：
0.211644 oz
Tags
IPP65R110CFDA, IPP65R11, IPP65R1, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube
*** Source Electronics
Metal Oxide Semiconductor Field Effect Transistor
***i-Key
MOSFET N-CH 650V TO-220-3
***ronik
N-CH 650V 31,2A 110mOhm TO220-3
***ark
MOSFET, AEC-Q101, N-CH, 650V, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 650V, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, AEC-Q101, CAN N, 650V, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS Series; Standard di Qualifica Automotive:AEC-Q101; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型号 制造商 描述 库存 价格
IPP65R110CFDAAKSA1
DISTI # IPP65R110CFDAAKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V TO-220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		458In Stock
  • 1000:$3.8455
  • 500:$4.5597
  • 100:$5.6310
  • 10:$6.8670
  • 1:$7.6900
IPP65R110CFDAAKSA1
DISTI # IPP65R110CFDAAKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R110CFDAAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$3.4900
  • 1000:$3.3900
  • 2000:$3.2900
  • 3000:$3.1900
  • 5000:$3.0900
IPP65R110CFDAAKSA1
DISTI # IPP65R110CFDA		Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube (Alt: IPP65R110CFDA)
RoHS: Compliant
Min Qty: 500
Container: Tube		Asia - 0
    IPP65R110CFDAAKSA1
    DISTI # 726-IPP65R110CFDAAKS    		Infineon Technologies AGMOSFET N-Ch 650V 31.2A TO220-3
    RoHS: Compliant    		263
    • 1:$6.6100
    • 10:$5.6200
    • 100:$4.8700
    • 250:$4.6200
    • 500:$4.1500
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    可用性
    库存:
    736
    订购:
    2719
    输入数量:
    IPP65R110CFDAAKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$6.61
    US$6.61
    10
    US$5.61
    US$56.10
    100
    US$4.87
    US$487.00
    250
    US$4.62
    US$1 155.00
    500
    US$4.14
    US$2 070.00
    1000
    US$3.49
    US$3 490.00
    2500
    US$3.32
    US$8 300.00
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