ZXMN3A06DN8TA

Mfr. #:: ZXMN3A06DN8TA
制造商:: Diodes Incorporated
描述:: Darlington Transistors MOSFET Dl 30V N-Chnl UMOS
生命周期:: 制造商新产品。
数据表:: ZXMN3A06DN8TA 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: ZXMN3A06DN8TA 更多信息

产品属性
属性值

制造商: 二极管公司

产品分类: FET - 阵列

系列: ZXMN3

打包: 切割胶带 (CT) 替代包装

单位重量: 0.002610 oz

安装方式: 贴片/贴片

包装盒: 8-SOIC (0.154", 3.90mm Width)

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: 8-SO

配置: 双双漏

FET型: 2 N-Channel (Dual)

最大功率: 1.8W

晶体管型: 2 N-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: 796pF @ 25V

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 4.9A

Rds-On-Max-Id-Vgs: 35 mOhm @ 9A, 10V

Vgs-th-Max-Id: 1V @ 250μA (Min)

栅极电荷-Qg-Vgs: 17.5nC @ 10V

钯功耗: 2.1 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 9.4 ns

上升时间: 6.4 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 6.2 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 35 mOhms

晶体管极性: N通道

典型关断延迟时间: 21.6 ns

典型开启延迟时间: 3 ns

通道模式: 增强

Tags: ZXMN3A06DN8T, ZXMN3A06DN, ZXMN3A06D, ZXMN3A06, ZXMN3A0, ZXMN3A, ZXMN3, ZXMN, ZXM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ZXMN3A06DN8TA 更多信息

Power MOSFETs: Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.

Market price

型号	制造商	描述	库存	价格
ZXMN3A06DN8TA DISTI # V72:2272_06708088	Zetex / Diodes Inc	Trans MOSFET N-CH 30V 6.2A Automotive 8-Pin SOIC T/R RoHS: Compliant	500	500:$0.6091 250:$0.6655 100:$0.6725 25:$0.8727 10:$0.8819 1:$1.0408
ZXMN3A06DN8TA DISTI # ZXMN3A06DN8CT-ND	Diodes Incorporated	MOSFET 2N-CH 30V 4.9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1385In Stock	100:$0.9160 10:$1.1590 1:$1.3100
ZXMN3A06DN8TA DISTI # ZXMN3A06DN8TR-ND	Diodes Incorporated	MOSFET 2N-CH 30V 4.9A 8-SOIC RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	1000In Stock	500:$0.6897
ZXMN3A06DN8TA DISTI # 27023504	Zetex / Diodes Inc	Trans MOSFET N-CH 30V 6.2A Automotive 8-Pin SOIC T/R RoHS: Compliant	6000	500:$0.4125
ZXMN3A06DN8TA DISTI # 31339432	Zetex / Diodes Inc	Trans MOSFET N-CH 30V 6.2A Automotive 8-Pin SOIC T/R RoHS: Compliant	500	16:$1.0408
ZXMN3A06DN8TA DISTI # ZXMN3A06DN8TA	Diodes Incorporated	Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC T/R - Tape and Reel (Alt: ZXMN3A06DN8TA) RoHS: Not Compliant Min Qty: 500 Container: Reel	Americas - 1000	500:$0.4969 1000:$0.4729 2000:$0.4509 3000:$0.4299 5000:$0.4209
ZXMN3A06DN8TA DISTI # ZXMN3A06DN8TA	Diodes Incorporated	Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC T/R (Alt: ZXMN3A06DN8TA) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0	1000:$0.5778 2000:$0.5523 3000:$0.5289 5000:$0.5144 10000:$0.5075 25000:$0.4941 50000:$0.4815
ZXMN3A06DN8TA DISTI # 70438829	Diodes Incorporated	MOSFET Dual N-Channel 30V 6.2A SOIC8 RoHS: Compliant	0	25:$0.8400 50:$0.8100 100:$0.7300 250:$0.6500
ZXMN3A06DN8TA DISTI # 522-ZXMN3A06DN8TA	Diodes Incorporated	MOSFET Dl 30V N-Chnl UMOS RoHS: Compliant	269	1:$1.0900 10:$0.9240 100:$0.7100 500:$0.6280
ZXMN3A06DN8TA	Diodes Incorporated	4900 MA, 30 V, 2 CHANNEL, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, SOIC-8	372	79:$0.4480 17:$0.6400 1:$1.2800
ZXMN3A06DN8TA DISTI # 7082444P	Zetex / Diodes Inc	MOSFET DUAL N-CHANNEL 30V 6.2A SOIC8, RL	770	50:£0.6680 100:£0.5380 250:£0.5080 500:£0.4960
ZXMN3A06DN8TA	Zetex / Diodes Inc		1017
ZXMN3A06DN8TA DISTI # C1S205700136699	Diodes Incorporated	Trans MOSFET N-CH 30V 6.2A Automotive 8-Pin SOIC T/R RoHS: Compliant	500	501:$0.5005

图片	型号	描述
	Mfr.#: ZXMN3A14FQTA OMO.#: OMO-ZXMN3A14FQTA	MOSFET MOSFET BVDSS 25V-30V
	Mfr.#: ZXMN3A03E6TA OMO.#: OMO-ZXMN3A03E6TA	MOSFET 30V N Chnl UMOS
	Mfr.#: ZXMN3A01E6TC OMO.#: OMO-ZXMN3A01E6TC	MOSFET 30V N Chnl UMOS
	Mfr.#: ZXMN3A02N8TA OMO.#: OMO-ZXMN3A02N8TA	MOSFET 30V N Chnl UMOS
	Mfr.#: ZXMN3A03E6TC OMO.#: OMO-ZXMN3A03E6TC	MOSFET 30V N Chnl UMOS
	Mfr.#: ZXMN3A01FTA/7N3 OMO.#: OMO-ZXMN3A01FTA-7N3-1190	全新原装
	Mfr.#: ZXMN3A01FTAPBF OMO.#: OMO-ZXMN3A01FTAPBF-1190	全新原装
	Mfr.#: ZXMN3AM832 OMO.#: OMO-ZXMN3AM832-1190	全新原装
	Mfr.#: ZXMN3A04DN8TA-CUT TAPE OMO.#: OMO-ZXMN3A04DN8TA-CUT-TAPE-1190	全新原装
	Mfr.#: ZXMN3A14FQTA OMO.#: OMO-ZXMN3A14FQTA-DIODES	30V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN3A06DN8TA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes