GS881E32CD-250

GS881E32CD-250
Mfr. #:
GS881E32CD-250
制造商:
GSI Technology
描述:
SRAM 2.5 or 3.3V 256K x 32 8M
生命周期:
制造商新产品。
数据表:
GS881E32CD-250 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
GS881E32CD-250 更多信息
产品属性
属性值
制造商:
GSI技术
产品分类:
静态随机存取存储器
打包:
托盘
系列:
GS881E32CD
品牌:
GSI技术
湿气敏感:
是的
产品类别:
静态随机存取存储器
出厂包装数量:
72
子类别:
内存和数据存储
商品名:
同步突发
Tags
GS881E32CD-25, GS881E32CD-2, GS881E32CD, GS881E32C, GS881E32, GS881E3, GS881E, GS881, GS88, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Quad 2.5V/3.3V 8M-Bit 256K x 32 5.5ns/2.5ns 165-Pin FBGA Tray
***ure Electronics
CY62157EV30 Series 8 Mb (512 K x 16) 2.2 - 3.6 V 45 ns Static RAM - VFBGA-48
***el Electronic
CYPRESS SEMICONDUCTOR - CY62157EV30LL-45BVXI - IC, SRAM, 8MB, 512KX16, 3V, VFBGA48
***ment14 APAC
IC, SRAM, 8MB, 512KX16, 3V, VFBGA48; Memory Size:8Mbit; Memory Configuration:512K x 16; Access Time:45ns; Supply Voltage Range:2.2V to 3.6V; Memory Case Style:FBGA; No. of Pins:48; Operating Temperature Range:-40°C to +85°C; SVHC:No SVHC (20-Jun-2011); Frequency:1MHz; Memory Configuration:512K x 16; Memory Size:8Mbit; Memory Type:SRAM; Memory Voltage Vcc:3V; Package / Case:FBGA; Supply Voltage Max:3.6V; Supply Voltage Min:2.2V; Termination Type:SMD
***se
8Mb LP SRAM 512K x 16 2.7 ~ 3.6V 48ball TFBGA (8 x 10mm) 55ns Industrial Temp
***et
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 48-Pin FBGA
***-Wing Technology
Surface Mount Tray SRAM - Asynchronous SRAM ic memory 55ns 0.75mm 8Mb 2.7V
***i-Key
IC SRAM 8MBIT PARALLEL 48FPBGA
***hard Electronics
Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 6 X 10 MM, 1.20 MM HEIGHT, FBGA-48
***et
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 70ns 48-Pin FBGA
***ponent Stockers USA
512K X 16 STANDARD SRAM 70 ns PBGA48
***S
French Electronic Distributor since 1988
***et
SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.1ns 165-Pin BGA
*** Stop Electro
ZBT SRAM, 256KX36, 3.1ns, CMOS, PBGA165
***or
IC SRAM 9MBIT PARALLEL 165TFBGA
***ure Electronics
CY7C1354CV25 9 Mb (256 K x 36) 166 MHz 2.5 V Pipelined SRAM - FBGA-165
***ress Semiconductor SCT
Synchronous SRAM, NoBL, Pipeline, 9216 Kb Density, 166 MHz Frequency, BGA-165
***ical
SRAM Chip Sync Quad 2.5V 9M-bit 256K x 36 3.5ns 165-Pin FBGA Tray
***-Wing Technology
3A991.B.2.A Surface Mount CY7C1354 Tray ic memory 166MHz 3.5ns 15mm 180mA
***ponent Stockers USA
256K X 36 ZBT SRAM 3.5 ns PBGA165
***i-Key
IC SRAM 9MBIT PARALLEL 165FBGA
***pmh
STANDARD SRAM, 512KX16, 55NS PBG
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
图片 型号 描述
GS881E36CD-200

Mfr.#: GS881E36CD-200

OMO.#: OMO-GS881E36CD-200

SRAM 2.5 or 3.3V 256K x 32 8M
GS881E32CGD-250I

Mfr.#: GS881E32CGD-250I

OMO.#: OMO-GS881E32CGD-250I

SRAM 2.5 or 3.3V 256K x 32 8M
GS881E36CD-333I

Mfr.#: GS881E36CD-333I

OMO.#: OMO-GS881E36CD-333I

SRAM 2.5 or 3.3V 256K x 32 8M
GS881E36CGT-250V

Mfr.#: GS881E36CGT-250V

OMO.#: OMO-GS881E36CGT-250V

SRAM 1.8/2.5V 256K x 36 9M
GS881E32CD-200V

Mfr.#: GS881E32CD-200V

OMO.#: OMO-GS881E32CD-200V

SRAM 1.8/2.5V 256K x 32 8M
GS881E32CGD-150IV

Mfr.#: GS881E32CGD-150IV

OMO.#: OMO-GS881E32CGD-150IV

SRAM 1.8/2.5V 256K x 32 8M
GS881E36CD-150IV

Mfr.#: GS881E36CD-150IV

OMO.#: OMO-GS881E36CD-150IV

SRAM 1.8/2.5V 256K x 32 8M
GS881E32CD-150IV

Mfr.#: GS881E32CD-150IV

OMO.#: OMO-GS881E32CD-150IV

SRAM 1.8/2.5V 256K x 32 8M
GS881E36CGD-250IV

Mfr.#: GS881E36CGD-250IV

OMO.#: OMO-GS881E36CGD-250IV

SRAM 1.8/2.5V 256K x 36 9M
GS881E32CGD-200I

Mfr.#: GS881E32CGD-200I

OMO.#: OMO-GS881E32CGD-200I

SRAM 2.5 or 3.3V 256K x 32 8M
可用性
库存:
Available
订购:
4000
输入数量:
GS881E32CD-250的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$9.62
US$9.62
25
US$8.93
US$223.25
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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