FGY60T120SQDN

FGY60T120SQDN
Mfr. #:
FGY60T120SQDN
制造商:
ON Semiconductor
描述:
IGBT Transistors IGBT 1200V 60A UFS
生命周期:
制造商新产品。
数据表:
FGY60T120SQDN 数据表
交货:
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ECAD Model:
更多信息:
FGY60T120SQDN 更多信息
产品属性
属性值
制造商:
安森美半导体
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-247-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
1200 V
集电极-发射极饱和电压:
1.7 V
最大栅极发射极电压:
25 V
25 C 时的连续集电极电流:
120 A
Pd - 功耗:
517 W
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
打包:
管子
连续集电极电流 Ic 最大值:
120 A
品牌:
安森美半导体
栅极-发射极漏电流:
200 nA
产品类别:
IGBT晶体管
出厂包装数量:
450
子类别:
IGBT
Tags
FGY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
FGY60T120SQDN 1200V 60A Ultra Field Stop IGBT
ON Semiconductor FGY60T120SQDN 1200V 60A Ultra Field Stop IGBT (Insulated Gate Bipolar Transistor) features a robust and cost effective Ultra Field Stop Trench construction. The FGY60T120SQDN provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The FGY60T120SQDN also features an integrated soft and fast co-packaged free wheeling diode with a low forward voltage for fast recovery.
型号 制造商 描述 库存 价格
FGY60T120SQDN
DISTI # V99:2348_22865638
ON SemiconductorIGBT 1200V 60A UFS0
  • 450000:$4.4170
  • 225000:$4.4230
  • 45000:$5.4410
  • 4500:$7.6630
  • 450:$8.0600
FGY60T120SQDN
DISTI # FGY60T120SQDNOS-ND
ON SemiconductorIGBT 1200V 60A UFS
RoHS: Not compliant
Min Qty: 1
Container: Tube
On Order
  • 900:$5.5172
  • 450:$6.0512
  • 25:$7.2968
  • 10:$7.6530
  • 1:$8.4700
FGY60T120SQDN
DISTI # FGY60T120SQDN
ON SemiconductorTrans IGBT Chip N-CH 1200V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGY60T120SQDN)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 4500:$4.0900
  • 2700:$4.1900
  • 1800:$4.2900
  • 450:$4.3900
  • 900:$4.3900
FGY60T120SQDN
DISTI # FGY60T120SQDN
ON SemiconductorTrans IGBT Chip N-CH 1200V 120A 3-Pin TO-247 Tube (Alt: FGY60T120SQDN)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 500:€4.2900
  • 1000:€4.2900
  • 100:€4.3900
  • 50:€4.4900
  • 25:€4.7900
  • 10:€4.8900
  • 1:€6.0900
FGY60T120SQDN
DISTI # 85AC2840
ON SemiconductorIGBT 1200V 60A UFS0
  • 500:$4.4100
  • 250:$4.5500
  • 100:$5.4300
  • 50:$5.8300
  • 25:$6.2400
  • 10:$6.8500
  • 1:$7.6300
FGY60T120SQDN
DISTI # 863-FGY60T120SQDN
ON SemiconductorIGBT Transistors IGBT 1200V 60A UFS
RoHS: Compliant
0
  • 1:$8.0600
  • 10:$7.2800
  • 25:$6.9500
  • 100:$6.0300
  • 250:$5.7600
  • 500:$5.2500
  • 1000:$4.5700
FGY60T120SQDN
DISTI # 3010444
ON SemiconductorIGBT, 1.2KV, 120A, 175DEG C, 517W
RoHS: Compliant
0
  • 250:$6.4100
  • 100:$7.5900
  • 50:$8.2000
  • 10:$8.8100
  • 5:$9.9700
  • 1:$10.7600
FGY60T120SQDN
DISTI # 3010444
ON SemiconductorIGBT, 1.2KV, 120A, 175DEG C, 517W0
  • 100:£4.3700
  • 50:£4.7100
  • 10:£5.0400
  • 5:£5.8400
  • 1:£6.3700
图片 型号 描述
FGY60T120SQDN

Mfr.#: FGY60T120SQDN

OMO.#: OMO-FGY60T120SQDN

IGBT Transistors IGBT 1200V 60A UFS
FGY60T120SQDN

Mfr.#: FGY60T120SQDN

OMO.#: OMO-FGY60T120SQDN-ON-SEMICONDUCTOR

IGBT 1200V 60A UFS
可用性
库存:
349
订购:
2332
输入数量:
FGY60T120SQDN的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$8.06
US$8.06
10
US$7.28
US$72.80
25
US$6.95
US$173.75
100
US$6.03
US$603.00
250
US$5.76
US$1 440.00
500
US$5.25
US$2 625.00
1000
US$4.57
US$4 570.00
2500
US$4.40
US$11 000.00
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