IS66WVE2M16EALL-70BLI-TR

IS66WVE2M16EALL-70BLI-TR
Mfr. #:
IS66WVE2M16EALL-70BLI-TR
制造商:
ISSI
描述:
SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V~1.95V, VDDQ 1.7V~1.95V,48 Ball BGA (6x8 mm), RoHS
生命周期:
制造商新产品。
数据表:
IS66WVE2M16EALL-70BLI-TR 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IS66WVE2M16EALL-70BLI-TR 更多信息
产品属性
属性值
制造商:
国际空间站
产品分类:
静态随机存取存储器
打包:
卷轴
系列:
IS66WVE2M16EALL
品牌:
国际空间站
湿气敏感:
是的
产品类别:
静态随机存取存储器
出厂包装数量:
2500
子类别:
内存和数据存储
Tags
IS66WVE2M16E, IS66WVE2, IS66WVE, IS66WV, IS66W, IS66, IS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
PSRAM Async 32M-Bit 2M x 16 70ns 48-Pin TFBGA T/R
***ark
32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V
***i-Key
IC PSRAM 32M PARALLEL 48TFBGA
Pseudo SRAM/CellularRAM
ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has a SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature which does not require physical refresh. These CellularRAM devics are designed in accordance to the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.
图片 型号 描述
IS66WVE2M16EALL-70BLI

Mfr.#: IS66WVE2M16EALL-70BLI

OMO.#: OMO-IS66WVE2M16EALL-70BLI

SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V~1.95V, VDDQ 1.7V~1.95V,48 Ball BGA (6x8 mm), RoHS
IS66WVE2M16ECLL-70BLI

Mfr.#: IS66WVE2M16ECLL-70BLI

OMO.#: OMO-IS66WVE2M16ECLL-70BLI

SRAM 32Mb,Pseudo SRAM 2M x 16 70ns
IS66WVE2M16ECLL-70BLI-TR

Mfr.#: IS66WVE2M16ECLL-70BLI-TR

OMO.#: OMO-IS66WVE2M16ECLL-70BLI-TR

SRAM 32Mb,Pseudo SRAM Asynch/Pg 2Mx16 55ns
IS66WVE2M16EALL-70BLI-TR

Mfr.#: IS66WVE2M16EALL-70BLI-TR

OMO.#: OMO-IS66WVE2M16EALL-70BLI-TR

SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V~1.95V, VDDQ 1.7V~1.95V,48 Ball BGA (6x8 mm), RoHS
IS66WVE2M16EBLL-70BLI

Mfr.#: IS66WVE2M16EBLL-70BLI

OMO.#: OMO-IS66WVE2M16EBLL-70BLI-INTEGRATED-SILICON-SOLUTION

SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE2M16EALL-70BLI

Mfr.#: IS66WVE2M16EALL-70BLI

OMO.#: OMO-IS66WVE2M16EALL-70BLI-INTEGRATED-SILICON-SOLUTION

SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V 1.95V, VDDQ 1.7V 1.95V,48 Ball BGA (6x8 mm), RoHS
IS66WVE2M16ECLL-70BLI

Mfr.#: IS66WVE2M16ECLL-70BLI

OMO.#: OMO-IS66WVE2M16ECLL-70BLI-INTEGRATED-SILICON-SOLUTION

SRAM 32Mb,Pseudo SRAM 2M x 16 70ns
IS66WVE2M16EBLL-55BLI

Mfr.#: IS66WVE2M16EBLL-55BLI

OMO.#: OMO-IS66WVE2M16EBLL-55BLI-INTEGRATED-SILICON-SOLUTION

SRAM 32Mb,Pseudo SRAM Asynch/Pg 2Mx16 55ns
IS66WVE2M16EBLL-55B

Mfr.#: IS66WVE2M16EBLL-55B

OMO.#: OMO-IS66WVE2M16EBLL-55B-1190

全新原装
IS66WVE2M16EBLL70BLI

Mfr.#: IS66WVE2M16EBLL70BLI

OMO.#: OMO-IS66WVE2M16EBLL70BLI-1190

Unclassified
可用性
库存:
Available
订购:
5000
输入数量:
IS66WVE2M16EALL-70BLI-TR的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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