FS215R04A1E3DBOMA1

Mfr. #:: FS215R04A1E3DBOMA1
制造商:: Infineon Technologies
描述:: IGBT Modules
生命周期:: 制造商新产品。
数据表:: FS215R04A1E3DBOMA1 数据表
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产品属性
属性值

制造商：: 英飞凌

产品分类：: IGBT 模块

RoHS：: Y

打包：: 托盘

品牌：: 英飞凌科技

湿气敏感：: 是的

产品类别：: IGBT 模块

出厂包装数量：: 16

子类别：: IGBT

第 # 部分别名：: FS215R04A1E3D SP001002716

Tags: FS21, FS2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FS215R04A1E3DBOMA1 描述

***or: FS215R04 - IGBT MODULE

***et: HYBRID PACK 1

***ineon: HybridPACK 1 with the ultra thin wafer 400Vces chipset is an automotive qualified power module designed for Hybrid Electric Vehicle (HEV) applications. The chipset is optimized for working voltages of 100V to about 250V and has lowest conduction and switching losses. It reduces the chip power losses up to 25% compared to the same chip size with latest 650Vces IGBT technology. | Summary of Features: Complete 3-phase Six-Pack with NTC in one compact module; High efficient 400Vces Ultra Thin Wafer Trench-Field-Stop IGBT3 with matching 400V Emitter Controlled 3 diode.; Increased diode current capability optimized for generator mode in hybrid electric vehicles; 25% reduced gate charge compared to IGBT3 650V reduces gate driver power losses; Enhanced wire bonding; Rugged Al 2O 3 ceramic for automotive applications with high thermal cycle requirements; Copper base plate for optimized cooling | Benefits: High efficient system approach for DCL voltages up to 200V; High reliability; Same mounting as HybridPACK1 modules with 650V chipset (modular approach) | Target Applications: hybrid; cav; drives

Market price

型号	制造商	描述	库存	价格
FS215R04A1E3DBOMA1 DISTI # FS215R04A1E3DBOMA1-ND	Infineon Technologies AG	IGBT MODULES RoHS: Compliant Min Qty: 16 Container: Tray	Temporarily Out of Stock	16:$263.4050
FS215R04A1E3DBOMA1 DISTI # FS215R04A1E3DBOMA1	Infineon Technologies AG	HYBRID PACK 1 - Trays (Alt: FS215R04A1E3DBOMA1) RoHS: Compliant Min Qty: 16 Container: Tray	Americas - 0
FS215R04A1E3DBOMA1 DISTI # FS215R04A1E3DBOMA1	Infineon Technologies AG	HYBRID PACK 1 - Bulk (Alt: FS215R04A1E3DBOMA1) RoHS: Compliant Min Qty: 2 Container: Bulk	Americas - 0	20:$222.8900 10:$226.9900 6:$234.8900 4:$243.6900 2:$252.7900
FS215R04A1E3DBOMA1 DISTI # 726-FS215R04A1E3DBOM	Infineon Technologies AG	IGBT Modules RoHS: Compliant	0	1:$280.8100 5:$274.0600 10:$267.2500 25:$263.5100
FS215R04A1E3DBOMA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor RoHS: Not Compliant	16	1000:$230.9100 500:$243.0600 100:$253.0500 25:$263.9000 1:$284.1900

FS215R04A1E3DBOMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes