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SI4446DY-T1-E3

SI4446DY-T1-E3
Mfr. #:
SI4446DY-T1-E3
制造商:
Vishay / Siliconix
描述:
MOSFET RECOMMENDED ALT 781-SI4840BDY-GE3
生命周期:
制造商新产品。
数据表:
SI4446DY-T1-E3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4446DY-T1-E3 DatasheetSI4446DY-T1-E3 Datasheet (P4-P6)
ECAD Model:
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
E
技术：
硅
安装方式：
贴片/贴片
包装/案例：
SO-8
商品名：
沟槽场效应晶体管
打包：
卷轴
高度：
1.75 mm
长度：
4.9 mm
系列：
SI4
宽度：
3.9 mm
品牌：
威世 / Siliconix
产品类别：
MOSFET
出厂包装数量：
2500
子类别：
MOSFET
第 # 部分别名：
SI4446DY-E3
单位重量：
0.006596 oz
Tags
SI444, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
MOSFET N-CH 40V 3.9A 8-SOIC / Trans MOSFET N-CH 40V 3.9A 8-Pin SOIC N T/R
*** Electronics
VISHAY SILICONIX SI4446DY-T1-E3 MOSFET Transistor, N Channel, 3.9 A, 40 V, 0.033 ohm, 10 V, 1.6 V
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:5200mA; Drain Source Voltage, Vds:40V; On Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.6V; Power Dissipation, Pd:1.1W ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 40V, 3.9A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
型号 制造商 描述 库存 价格
SI4446DY-T1-E3
DISTI # V36:1790_14141982		Vishay IntertechnologiesTrans MOSFET N-CH 40V 3.9A 8-Pin SOIC N T/R
RoHS: Compliant		0
    SI4446DY-T1-E3
    DISTI # SI4446DY-T1-E3TR-ND    		Vishay SiliconixMOSFET N-CH 40V 3.9A 8-SOIC
    Min Qty: 2500
    Container: Tape & Reel (TR)    		Limited Supply - Call
      SI4446DY-T1-E3
      DISTI # SI4446DY-T1-E3CT-ND      		Vishay SiliconixMOSFET N-CH 40V 3.9A 8-SOIC
      Min Qty: 1
      Container: Cut Tape (CT)      		Limited Supply - Call
        SI4446DY-T1-E3
        DISTI # SI4446DY-T1-E3DKR-ND        		Vishay SiliconixMOSFET N-CH 40V 3.9A 8-SOIC
        Min Qty: 1
        Container: Digi-Reel®        		Limited Supply - Call
          图片 型号 描述
          SI4446DY-T1-E3

          Mfr.#: SI4446DY-T1-E3

          OMO.#: OMO-SI4446DY-T1-E3

          		 MOSFET RECOMMENDED ALT 781-SI4840BDY-GE3
          SI4446DY-T1-E3

          Mfr.#: SI4446DY-T1-E3

          OMO.#: OMO-SI4446DY-T1-E3-VISHAY

          		 MOSFET N-CH 40V 3.9A 8-SOIC
          SI4446DY-T1-GE3

          Mfr.#: SI4446DY-T1-GE3

          OMO.#: OMO-SI4446DY-T1-GE3-VISHAY

          		 MOSFET N-CH 40V 3.9A 8-SOIC
          可用性
          库存:
          Available
          订购:
          5500
          输入数量:
          SI4446DY-T1-E3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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