SCT3160KLGC11

SCT3160KLGC11
Mfr. #:
SCT3160KLGC11
制造商:
Rohm Semiconductor
描述:
MOSFET N-Ch 1200V SiC 17A 160mOhm TrenchMOS
生命周期:
制造商新产品。
数据表:
SCT3160KLGC11 数据表
交货:
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支付:
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ECAD Model:
更多信息:
SCT3160KLGC11 更多信息
产品属性
属性值
制造商:
罗姆半导体
产品分类:
MOSFET
RoHS:
Y
技术:
碳化硅
安装方式:
通孔
包装/案例:
TO-247-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
1200 V
Id - 连续漏极电流:
17 A
Rds On - 漏源电阻:
160 mOhms
Vgs th - 栅源阈值电压:
2.7 V
Vgs - 栅源电压:
- 4 V, 22 V
Qg - 门电荷:
42 nC
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
Pd - 功耗:
103 W
配置:
单身的
频道模式:
增强
打包:
管子
系列:
SCT3x
晶体管类型:
1 N-Channel
品牌:
罗姆半导体
正向跨导 - 最小值:
2.5 S
秋季时间:
25 ns
产品类别:
MOSFET
上升时间:
18 ns
出厂包装数量:
450
子类别:
MOSFET
典型关断延迟时间:
24 ns
典型的开启延迟时间:
14 ns
第 # 部分别名:
SCT3160KL
单位重量:
0.211644 oz
Tags
SCT316, SCT31, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
N-Channel Silicon Carbide Power Mosfet 1200V/17A Rohs Compliant: Yes
***ure Electronics
SCT3160KL Series 1200 V 17 A 208 mOhm N-Channel SiC Power Mosfet - TO-247N
***ical
Trans MOSFET N-CH SiC 1.2KV 17A 3-Pin(3+Tab) TO-247N Tube
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
型号 制造商 描述 库存 价格
SCT3160KLGC11
DISTI # V99:2348_18340123
ROHM SemiconductorSCT3160KLGC110
  • 1:$6.3047
SCT3160KLGC11
DISTI # SCT3160KLGC11-ND
ROHM SemiconductorMOSFET NCH 1.2KV 17A TO247N
RoHS: Compliant
Min Qty: 1
Container: Tube
900In Stock
  • 510:$6.6340
  • 120:$7.6184
  • 30:$8.7740
  • 10:$9.2020
  • 1:$10.1900
SCT3160KLGC11
DISTI # SCT3160KLGC11
ROHM SemiconductorROHSCT3160KLGC11 - Rail/Tube (Alt: SCT3160KLGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 4500:$5.3900
  • 2250:$5.5900
  • 1350:$5.8900
  • 900:$6.2900
  • 450:$6.6900
SCT3160KLGC11
DISTI # SCT3160KLGC11
ROHM SemiconductorROHSCT3160KLGC11 (Alt: SCT3160KLGC11)
RoHS: Compliant
Min Qty: 450
Asia - 0
    SCT3160KLGC11
    DISTI # SCT3160KLGC11
    ROHM SemiconductorROHSCT3160KLGC11 (Alt: SCT3160KLGC11)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 250:€4.8300
    • 100:€5.0500
    • 50:€5.1100
    • 10:€5.1600
    • 5:€5.4700
    • 1:€6.0500
    SCT3160KLGC11
    DISTI # 05AC9467
    ROHM SemiconductorMOSFET, N-CH, 1.2KV, 17A, TO-247N-3,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V RoHS Compliant: Yes20
    • 250:$8.0700
    • 100:$8.4600
    • 50:$9.1000
    • 25:$9.7500
    • 10:$10.2200
    • 1:$11.3100
    SCT3160KLGC11.
    DISTI # 32AC3230
    ROHM SemiconductorN-CHANNEL SILICON CARBIDE POWER MOSFET 1200V/17A ROHS COMPLIANT: YES550
    • 250:$8.0700
    • 100:$8.4600
    • 50:$9.1000
    • 25:$9.7500
    • 10:$10.4300
    • 1:$11.5400
    SCT3160KLGC11
    DISTI # 755-SCT3160KLGC11
    ROHM SemiconductorMOSFET N-Ch 1200V SiC 17A 160mOhm TrenchMOS
    RoHS: Compliant
    0
    • 1:$10.1800
    • 10:$9.2000
    • 25:$8.7700
    • 100:$7.6100
    • 250:$7.2700
    SCT3160KLGC11
    DISTI # 1501496
    ROHM SemiconductorMOSFET N-CHANNEL 17A 1200V SIC TO-247, EA3
    • 50:£4.8400
    • 12:£4.9400
    • 6:£5.1300
    • 3:£5.2700
    • 1:£5.5000
    SCT3160KLGC11ROHM Semiconductor 76
    • 25:$9.7125
    • 8:$10.5000
    • 1:$11.8125
    SCT3160KLGC11
    DISTI # SCT3160KLGC11
    ROHM SemiconductorSiC-N-Ch 1200V 17A 103W 0,208R TO247
    RoHS: Compliant
    317
    • 1:€8.9500
    • 5:€8.0500
    • 10:€7.6000
    • 30:€7.3500
    SCT3160KLGC11
    DISTI # TMOS1921
    ROHM SemiconductorSiC-N 1200V 160mOhm 17A TO247
    RoHS: Compliant
    Stock DE - 0Stock HK - 0Stock US - 0
    • 450:$7.4800
    SCT3160KLGC11ROHM SemiconductorRoHS(ship within 1day)95
    • 1:$7.5600
    • 10:$6.4200
    • 50:$5.6700
    • 100:$5.4400
    • 500:$5.3700
    • 1000:$5.2500
    SCT3160KLGC11ROHM SemiconductorSCT3160KL Series 1200 V 17 A 208 mOhm N-Channel SiC Power Mosfet - TO-247N11199
    • 1:¥73.0000
    • 100:¥46.5000
    • 450:¥36.0000
    SCT3160KLGC11
    DISTI # 2678788
    ROHM SemiconductorMOSFET, N-CH, 1.2KV, 17A, TO-247N
    RoHS: Compliant
    138
    • 120:$11.4000
    • 30:$13.1300
    • 10:$13.7700
    • 1:$15.2400
    SCT3160KLGC11
    DISTI # 2678788
    ROHM SemiconductorMOSFET, N-CH, 1.2KV, 17A, TO-247N140
    • 100:£6.2500
    • 50:£6.6300
    • 10:£7.0100
    • 5:£8.3500
    • 1:£8.9400
    SCT3160KLGC11ROHM SemiconductorMOSFET N-Ch 1200V SiC 17A 160mOhm TrenchMOS
    RoHS: Compliant
    Americas - 450
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      1200V/160mohm SiC MOSFET TO-247-3L
      C2M0080120D

      Mfr.#: C2M0080120D

      OMO.#: OMO-C2M0080120D-WOLFSPEED

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      可用性
      库存:
      Available
      订购:
      5000
      输入数量:
      SCT3160KLGC11的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$10.18
      US$10.18
      10
      US$9.20
      US$92.00
      25
      US$8.77
      US$219.25
      100
      US$7.61
      US$761.00
      250
      US$7.27
      US$1 817.50
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