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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| BSC090N03MSGATMA1 DISTI # V72:2272_06390969 | Infineon Technologies | Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant | 2154 |
|
| BSC090N03MSGATMA1 DISTI # V36:1790_06390969 | Infineon Technologies | Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant | 0 |
|
| BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1CT-ND | Infineon Technologies | MOSFET N-CH 30V 48A TDSON-8 Min Qty: 1 Container: Cut Tape (CT) | 6764In Stock |
|
| BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1DKR-ND | Infineon Technologies | MOSFET N-CH 30V 48A TDSON-8 Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1TR-ND | Infineon Technologies | MOSFET N-CH 30V 48A TDSON-8 Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSC090N03MSGATMA1 DISTI # 32892194 | Infineon Technologies | Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R | 5000 |
|
| BSC090N03MSGATMA1 DISTI # 26195690 | Infineon Technologies | Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R | 2154 |
|
| BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1 | Infineon | Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP - Tape and Reel (Alt: BSC090N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 5000 |
|
| BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1 | Infineon | Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP - Bulk (Alt: BSC090N03MSGATMA1) RoHS: Compliant Min Qty: 1786 Container: Bulk | Americas - 0 |
|
| BSC090N03MSGATMA1. DISTI # 31AC8220 | INFINEON | TRANSITIONAL MOSFETS ROHS COMPLIANT: YES RoHS: Compliant | 0 |
|
| BSC090N03MS G DISTI # 726-BSC090N03MSG | Infineon | MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M RoHS: Compliant | 8587 |
|
| BSC090N03MSGATMA1 DISTI # 726-BSC090N03MSGATMA | Infineon | MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M RoHS: Compliant | 3387 |
|
| BSC090N03MSGATMA1 | INFINEON | Single N-Channel 30 V 9 mOhm 18 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant Min Qty: 1 | 200Cut Tape/Mini-Reel |
|
| BSC090N03MSGATMA1 | Infineon Technologies | Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, N-Channel, MOSFET RoHS: Compliant | 15000 |
|
| BSC090N03MSGATMA1 DISTI # 1658273 | Infineon | On a Reel of 5000, BSC090N03MSGATMA1 N-Channel MOSFET, 48 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon, RL Min Qty: 5000 Container: Reel | 0 |
|
| BSC090N03MSGATMA1 DISTI # 9062940 | Infineon | In a Pack of 25, BSC090N03MSGATMA1 N-Channel MOSFET, 48 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon, PK Min Qty: 25 Container: Package | 0 |
|
| BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1 | INFINEON TECHNOLOGIES | Transistor: N-MOSFET,unipolar,30V,43A,32W,PG-TDSON-8 | 4988 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: BSC090N03MS G OMO.#: OMO-BSC090N03MS-G |
MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M |
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Mfr.#: BSC090N03MSGATMA1 OMO.#: OMO-BSC090N03MSGATMA1 |
MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M |
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|
Mfr.#: BSC090N03MSGXT OMO.#: OMO-BSC090N03MSGXT |
MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M |
|
Mfr.#: BSC090N03MS OMO.#: OMO-BSC090N03MS-1190 |
Transistor: N-MOSFET, unipolar, 30V, 43A, 32W, PG-TDSON-8 |
|
|
Mfr.#: BSC090N03MSG OMO.#: OMO-BSC090N03MSG-1190 |
Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
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Mfr.#: BSC090N03MSG 48A 30V |
全新原装 |
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Mfr.#: BSC090N03MSGATMA1 |
MOSFET N-CH 30V 48A TDSON-8 |
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Mfr.#: BSC090N03MSGATMA1 , TDZ |
全新原装 |
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|
Mfr.#: BSC090N03MSGXT OMO.#: OMO-BSC090N03MSGXT-1190 |
MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M |
|
|
Mfr.#: BSC090N03MSGATMA1-CUT TAPE |
全新原装 |