IPD60R380C6ATMA1

IPD60R380C6ATMA1
Mfr. #:
IPD60R380C6ATMA1
制造商:
Infineon Technologies
描述:
MOSFET N-Ch 600V 10.6A DPAK-2
生命周期:
制造商新产品。
数据表:
IPD60R380C6ATMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
TO-252-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
600 V
Id - 连续漏极电流:
10.6 A
Rds On - 漏源电阻:
340 mOhms
Vgs th - 栅源阈值电压:
2.5 V
Vgs - 栅源电压:
20 V
Qg - 门电荷:
32 nC
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
83 W
配置:
单身的
频道模式:
增强
商品名:
酷摩
打包:
卷轴
高度:
2.3 mm
长度:
6.5 mm
系列:
CoolMOS C6
晶体管类型:
1 N-Channel
宽度:
6.22 mm
品牌:
英飞凌科技
秋季时间:
9 ns
产品类别:
MOSFET
上升时间:
10 ns
出厂包装数量:
2500
子类别:
MOSFET
典型关断延迟时间:
110 ns
典型的开启延迟时间:
15 ns
第 # 部分别名:
IPD60R380C6 SP001117716
单位重量:
0.139332 oz
Tags
IPD60R380C, IPD60R380, IPD60R38, IPD60R3, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 380 mOhm 32 nC CoolMOS™ Power Mosfet - TO-252-3
*** Stop Electro
Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ment14 APAC
MOSFET,N CH,600V,10.6A,TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.6A; Power Dissipation Pd:83W; Voltage Vgs Max:30V
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ical
Trans MOSFET N-CH 600V 9.1A 3-Pin(2+Tab) DPAK T/R
***i-Key Marketplace
COOLMOS N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***ical
Trans MOSFET N-CH 700V 10.6A Automotive 3-Pin(2+Tab) DPAK T/R
***nell
MOSFET, N-CH, 650V, 10.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.6A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS E6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
*** Stop Electro
Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
*** Source Electronics
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R / CoolMOS Power Transistor
*** Stop Electro
Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:650V; On Resistance Rds(on):385mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9A; Package / Case:TO-252; Power Dissipation Pd:83W; Pulse Current Idm:27A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package
***ark
MOSFET, N-CH, 600V, 11A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 600V, 11A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***icroelectronics
N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a DPAK package
***r Electronics
Power Field-Effect Transistor, 13A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***enic
500V 13A 240m´Î@10V6.5A 110W 3V@250uA 1.35pF@100V N Channel 710pF@100v 19.5nC@0~10V -55¡Í~+150¡Í@(Tj) TO-252-3 MOSFETs ROHS
***icroelectronics
N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
***ark
Mosfet, N-Ch, 650V, 11A, To-252 Rohs Compliant: Yes
***el Electronic
Cap Ceramic 0.047uF 500V X7R 20% SMD 1812 125C Embossed T/R
***icroelectronics SCT
Power MOSFETs, 650V, 11A, DPAK, Tape and Reel
***enic
650V 11A 320m´Î@10V5.5A 110W 3V@250uA 1.1pF@100V N Channel 718pF@100V 19.5nC@10V -55¡Í~+150¡Í@(Tj) DPAK MOSFETs ROHS
型号 制造商 描述 库存 价格
IPD60R380C6ATMA1
DISTI # V72:2272_06383823
Infineon Technologies AGTrans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
80
  • 75000:$0.7690
  • 30000:$0.8060
  • 15000:$0.8430
  • 6000:$0.8801
  • 3000:$0.9171
  • 1000:$0.9541
  • 500:$0.9911
  • 250:$1.0703
  • 100:$1.0814
  • 50:$1.2503
  • 25:$1.3892
  • 10:$1.4112
  • 1:$1.8219
IPD60R380C6ATMA1
DISTI # IPD60R380C6ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 600V 10.6A TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1844In Stock
  • 1000:$0.9328
  • 500:$1.1258
  • 100:$1.3703
  • 10:$1.7050
  • 1:$1.9000
IPD60R380C6ATMA1
DISTI # IPD60R380C6ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 600V 10.6A TO252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1844In Stock
  • 1000:$0.9328
  • 500:$1.1258
  • 100:$1.3703
  • 10:$1.7050
  • 1:$1.9000
IPD60R380C6ATMA1
DISTI # IPD60R380C6ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 600V 10.6A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
On Order
  • 12500:$0.7949
  • 5000:$0.8119
  • 2500:$0.8432
IPD60R380C6ATMA1
DISTI # 32874244
Infineon Technologies AGTrans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
80
  • 8:$0.8634
IPD60R380C6ATMA1
DISTI # IPD60R380C6ATMA1
Infineon Technologies AGTrans MOSFET N-CH 600V 10.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R380C6ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.7209
  • 15000:$0.7339
  • 10000:$0.7599
  • 5000:$0.7879
  • 2500:$0.8179
IPD60R380C6ATMA1
DISTI # SP001117716
Infineon Technologies AGTrans MOSFET N-CH 600V 10.6A 3-Pin TO-252 T/R (Alt: SP001117716)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€0.7389
  • 15000:€0.7889
  • 10000:€0.8669
  • 5000:€0.9699
  • 2500:€1.2439
IPD60R380C6ATMA1
DISTI # 30T1835
Infineon Technologies AGMOSFET, N CHANNEL, 650V, 10.6A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.6A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.34ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1000:$0.8320
  • 500:$1.0000
  • 100:$1.1400
  • 10:$1.4300
  • 1:$1.6900
IPD60R380C6ATMA1
DISTI # 726-IPD60R380C6ATMA1
Infineon Technologies AGMOSFET N-Ch 600V 10.6A DPAK-2
RoHS: Compliant
5525
  • 1:$1.6700
  • 10:$1.4200
  • 100:$1.1300
  • 500:$0.9940
  • 1000:$0.8240
IPD60R380C6
DISTI # 726-IPD60R380C6
Infineon Technologies AGMOSFET N-Ch 600V 10.6A DPAK-2
RoHS: Compliant
15
  • 1:$1.6700
  • 10:$1.4200
  • 100:$1.1300
  • 500:$0.9940
  • 1000:$0.8240
IPD60R380C6ATMA1
DISTI # 7533011P
Infineon Technologies AGMOSFET N-CH 600V 10.6A COOLMOS C6 TO252, RL6156
  • 1250:£0.5950
  • 626:£0.6850
  • 126:£0.7900
  • 26:£0.9450
IPD60R380C6ATMA1
DISTI # 1860805
Infineon Technologies AGMOSFET,N CH,600V,10.6A,TO252
RoHS: Compliant
5009
  • 2500:$1.1900
  • 1000:$1.2100
  • 500:$1.4500
  • 100:$1.6500
  • 10:$2.0700
  • 1:$2.5800
IPD60R380C6ATMA1
DISTI # 1860805
Infineon Technologies AGMOSFET,N CH,600V,10.6A,TO2525024
  • 500:£0.7420
  • 250:£0.7920
  • 100:£0.8400
  • 25:£1.0500
  • 5:£1.1500
图片 型号 描述
STM32G070RBT6

Mfr.#: STM32G070RBT6

OMO.#: OMO-STM32G070RBT6

ARM Microcontrollers - MCU Arm Cortex -M0+ 32-bit MCU, 128 KB Flash, 36 KB RAM, 4x USART, timers, ADC, comm. I/Fs, 2.0-3.6V
CGA3E2C0G1H102J080AA

Mfr.#: CGA3E2C0G1H102J080AA

OMO.#: OMO-CGA3E2C0G1H102J080AA

Multilayer Ceramic Capacitors MLCC - SMD/SMT CGA 0603 50V 1000pF C0G 5% AEC-Q200
505565-0501

Mfr.#: 505565-0501

OMO.#: OMO-505565-0501-1190

MLX5055650501 - Bulk (Alt: 5055650501)
RAC04-15SGB

Mfr.#: RAC04-15SGB

OMO.#: OMO-RAC04-15SGB-RECOM-POWER

4W AC/DC-CONVERTER 'POWERLINE'
STM32G070RBT6

Mfr.#: STM32G070RBT6

OMO.#: OMO-STM32G070RBT6-1190

- Trays (Alt: STM32G070RBT6)
CRCW08051K30FKEB

Mfr.#: CRCW08051K30FKEB

OMO.#: OMO-CRCW08051K30FKEB-VISHAY-DALE

Thick Film Resistors - SMD 1/8watt 1.3Kohms 1% 100ppm
CRCW080524K0FKEAC

Mfr.#: CRCW080524K0FKEAC

OMO.#: OMO-CRCW080524K0FKEAC-VISHAY-DALE

D12/CRCW0805-C 100 24K 1% ET1
CGA3E2C0G1H102J080AA

Mfr.#: CGA3E2C0G1H102J080AA

OMO.#: OMO-CGA3E2C0G1H102J080AA-TDK

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 1000pF 50volts C0G 5% T=0.8mm
TLP3406S(TP,E

Mfr.#: TLP3406S(TP,E

OMO.#: OMO-TLP3406S-TP-E-TOSHIBA-SEMICONDUCTOR-AND-STOR

全新原装
可用性
库存:
Available
订购:
1989
输入数量:
IPD60R380C6ATMA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$1.67
US$1.67
10
US$1.42
US$14.20
100
US$1.13
US$113.00
500
US$0.99
US$497.00
1000
US$0.82
US$824.00
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