S25FL512SAG-AEC10

Mfr. #:: S25FL512SAG-AEC10
制造商:: Cypress Semiconductor
描述:: NOR Flash
生命周期:: 制造商新产品。
数据表:: S25FL512SAG-AEC10 数据表
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更多信息:: S25FL512SAG-AEC10 更多信息 S25FL512SAG-AEC10 Product Details

产品属性
属性值

制造商：: 赛普拉斯半导体

产品分类：: NOR闪存

系列：: S25FL512S

打包：: 托盘

品牌：: 赛普拉斯半导体

产品类别：: NOR闪存

出厂包装数量：: 338

子类别：: 内存和数据存储

商品名：: 镜像位

Tags: S25FL512SAG-A, S25FL512SAG, S25FL512SA, S25FL512S, S25FL5, S25FL, S25F, S25

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S25FL512SAG-AEC10 更多信息

S25FL512S FL-S NOR Flash Memory Devices: Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.

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