CSD17555Q5A

Mfr. #:: CSD17555Q5A
描述:: MOSFET N-CH 30V 100A 8SON
生命周期:: 制造商新产品。
数据表:: CSD17555Q5A 数据表
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更多信息:: CSD17555Q5A 更多信息 CSD17555Q5A Product Details

产品属性
属性值

制造商: 德州仪器

产品分类: 晶体管 - FET、MOSFET - 单

系列: CSD17555Q5A

打包: 卷轴

安装方式: 贴片/贴片

商品名: 场效应管

包装盒: VSON-FET-8

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 3 W

最高工作温度: + 150 C

最低工作温度: - 55 C

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 100 A

Vds-漏-源-击穿电压: 30 V

VGS-th-Gate-Source-Threshold-Voltage: 1.5 V

Rds-On-Drain-Source-Resistance: 3.4 mOhms

晶体管极性: N通道

Qg-门电荷: 23 nC

Tags: CSD1755, CSD175, CSD17, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD17555Q5A 描述

***as Instruments: 30V N-ch NexFET Power MOSFET, CSD17555Q5A 8-VSONP -55 to 150

***p One Stop Global: Trans MOSFET N-CH Si 30V 24A 8-Pin VSONP EP T/R

***i-Key: MOSFET N-CH 30V 100A 8SON

***ark: 30V N ch MOSFET

CSD17555Q5A 更多信息

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

型号	描述	库存	价格
CSD17555Q5A DISTI # 296-34772-2-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call	5000:$0.7651 2500:$0.7945
CSD17555Q5A DISTI # 296-34772-1-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call	1000:$0.8789 500:$1.0608 100:$1.3638 10:$1.6970 1:$1.8800
CSD17555Q5A DISTI # 296-34772-6-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call	1000:$0.8789 500:$1.0608 100:$1.3638 10:$1.6970 1:$1.8800
CSD17555Q5A DISTI # CSD17555Q5A	Trans MOSFET N-CH 30V 116A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD17555Q5A) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.7759 5000:$0.7379 10000:$0.7139 15000:$0.6899 25000:$0.6709
CSD17555Q5A	30V N-ch NexFET Power MOSFET, CSD17555Q5A	2500	1000:$0.6100 750:$0.6600 500:$0.8100 250:$0.9600 100:$1.0400 25:$1.2000 10:$1.2900 1:$1.4400
CSD17555Q5A	Power Field-Effect Transistor, 24A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET RoHS: Compliant	208412	1000:$0.6600 500:$0.7000 100:$0.7300 25:$0.7600 1:$0.8100
CSD17555Q5A DISTI # 595-CSD17555Q5A	MOSFET 30V N-ch NexFET Pwr MOSFET RoHS: Compliant	1176	1:$1.5800 10:$1.3400 100:$1.0700 500:$0.9370 1000:$0.7760

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