IRFHM8342TRPBF

IRFHM8342TRPBF
Mfr. #:
IRFHM8342TRPBF
制造商:
Infineon Technologies
描述:
MOSFET 30V 3.8nC SGL N-CH HEXFET Pwr MOSFET
生命周期:
制造商新产品。
数据表:
IRFHM8342TRPBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IRFHM8342TRPBF 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
PQFN-8
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
30 V
Id - 连续漏极电流:
10 A
Rds On - 漏源电阻:
20 mOhms
Vgs th - 栅源阈值电压:
1.8 V
Vgs - 栅源电压:
20 V
Qg - 门电荷:
10 nC
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
2.6 W
配置:
单身的
商品名:
小功率红外
打包:
卷轴
高度:
1.05 mm
长度:
3.3 mm
系列:
IRFHM8342
晶体管类型:
1 N-Channel
宽度:
3.3 mm
品牌:
英飞凌科技
正向跨导 - 最小值:
19 S
秋季时间:
5.6 ns
产品类别:
MOSFET
上升时间:
30 ns
出厂包装数量:
4000
子类别:
MOSFET
典型关断延迟时间:
7.6 ns
典型的开启延迟时间:
8.1 ns
第 # 部分别名:
SP001551976
Tags
IRFHM83, IRFHM8, IRFHM, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
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***ical
Trans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 6.2C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
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*** Source Electronics
Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC
***ark
N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ure Electronics
Single N-Channel 30 V 12.4 mOhm 5.4 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS
***ark
TAPE AND REEL / MOSFET, 30V,A, 12mOhm, 5nC, PQFN3.3x3.3 single
***p One Stop
Trans MOSFET N-CH 30V 12A 8-Pin PQFN EP T/R
***ineon
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***ark
N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin
***(Formerly Allied Electronics)
MOSFET, 30V, 11A, 11.9 MOHM, 6.2 NC QG, SO-8, HALOGEN-FREE
***et
Trans MOSFET N-CH 30V 11A 8-Pin SOIC T/R
***nell
MOSFET, N-CH, 30V, 11A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0093ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Pow
***emi
N-Channel Fast Switching PowerTrench® MOSFET, 30V, 13A, 11.3mΩ
***et Europe
Trans MOSFET N-CH 30V 13A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:13A; Package / Case:SOIC-8; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
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***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 8A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ment14 APAC
MOSFET, DUAL N-CH 30V 8A/11A SO8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8mA; Package / Case:SOIC; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
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***rchild Semiconductor
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***nell
MOSFET, N-CH, 30V, 6MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
Small PowIR MOSFETs
Infineon Small PowIR MOSFETs combine high performance silicon technology with small and innovative packaging to offer designers more flexibility when it comes to making a MOSFET selection. The IRLML6244TRPBF provides 21 mO max @ 4.5Vgs RDS(on). The new 2x2 PQFN package offers some of the smallest dual configurations possible (dual N or dual P) while providing 19°C/W optimal thermal performance. Infineon Small PowIR MOSFETs are available in SO-8, TSOP-6 and PQFN 3x3 packages allowing designers to maximize board space, save on part count and improve system efficiency.Learn More
型号 制造商 描述 库存 价格
IRFHM8342TRPBF
DISTI # V72:2272_13890761
Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R2488
  • 1000:$0.2064
  • 500:$0.2544
  • 250:$0.2572
  • 100:$0.2601
  • 25:$0.3730
  • 10:$0.3776
  • 1:$0.4321
IRFHM8342TRPBF
DISTI # IRFHM8342TRPBFCT-ND
Infineon Technologies AGMOSFET N-CH 30V 10A 8PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    IRFHM8342TRPBF
    DISTI # IRFHM8342TRPBFDKR-ND
    Infineon Technologies AGMOSFET N-CH 30V 10A 8PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      IRFHM8342TRPBF
      DISTI # IRFHM8342TRPBFTR-ND
      Infineon Technologies AGMOSFET N-CH 30V 10A 8PQFN
      RoHS: Compliant
      Min Qty: 4000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 4000:$0.2725
      IRFHM8342TRPBF
      DISTI # 24576937
      Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R4000
      • 4000:$0.1495
      IRFHM8342TRPBF
      DISTI # 31035522
      Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R2488
      • 1000:$0.2064
      • 500:$0.2544
      • 250:$0.2572
      • 100:$0.2601
      • 44:$0.3730
      IRFHM8342TRPBF
      DISTI # IRFHM8342TRPBF
      Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin PQFN T/R (Alt: IRFHM8342TRPBF)
      RoHS: Compliant
      Min Qty: 4000
      Container: Tape and Reel
      Asia - 0
        IRFHM8342TRPBF
        DISTI # IRFHM8342TRPBF
        Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFHM8342TRPBF)
        RoHS: Compliant
        Min Qty: 4000
        Container: Reel
        Americas - 0
        • 4000:$0.1649
        • 8000:$0.1589
        • 16000:$0.1529
        • 24000:$0.1479
        • 40000:$0.1459
        IRFHM8342TRPBF
        DISTI # SP001551976
        Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin PQFN T/R (Alt: SP001551976)
        RoHS: Compliant
        Min Qty: 4000
        Container: Tape and Reel
        Europe - 0
        • 4000:€0.2769
        • 8000:€0.2149
        • 16000:€0.1759
        • 24000:€0.1489
        • 40000:€0.1379
        IRFHM8342TRPBF
        DISTI # 942-IRFHM8342TRPBF
        Infineon Technologies AGMOSFET 30V 3.8nC SGL N-CH HEXFET Pwr MOSFET
        RoHS: Compliant
        0
        • 1:$0.6300
        • 10:$0.5200
        • 100:$0.3170
        • 1000:$0.2450
        • 4000:$0.2090
        IRFHM8342TRPBF
        DISTI # C1S322000490983
        Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R
        RoHS: Compliant
        2488
        • 250:$0.2572
        • 100:$0.2601
        • 25:$0.3730
        • 10:$0.3776
        IRFHM8342TRPBF
        DISTI # C1S322000490992
        Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R
        RoHS: Compliant
        4000
        • 4000:$0.2380
        图片 型号 描述
        FDWS9509L-F085

        Mfr.#: FDWS9509L-F085

        OMO.#: OMO-FDWS9509L-F085

        MOSFET PMOS PWR56 40V 8 MOHM
        VS-6EWH06FNTRHM3

        Mfr.#: VS-6EWH06FNTRHM3

        OMO.#: OMO-VS-6EWH06FNTRHM3

        Rectifiers 6 Amp 600 Volt
        VS-5EWL06FNTR-M3

        Mfr.#: VS-5EWL06FNTR-M3

        OMO.#: OMO-VS-5EWL06FNTR-M3

        Rectifiers Ultrafast 5A 600V 59ns
        UPW1H561MHD

        Mfr.#: UPW1H561MHD

        OMO.#: OMO-UPW1H561MHD

        Aluminum Electrolytic Capacitors - Radial Leaded 50volts 560uF 12.5x25 20% 5LS
        GMK316AB7475KLHT

        Mfr.#: GMK316AB7475KLHT

        OMO.#: OMO-GMK316AB7475KLHT

        Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 35VDC 4.7uF 10% X7R AEC-Q200
        FDWS9509L-F085

        Mfr.#: FDWS9509L-F085

        OMO.#: OMO-FDWS9509L-F085-ON-SEMICONDUCTOR

        PMOS PWR56 40V 8 MOHM
        EEU-FR1E122L

        Mfr.#: EEU-FR1E122L

        OMO.#: OMO-EEU-FR1E122L-PANASONIC

        Aluminum Electrolytic Capacitors - Leaded 25VDC 1200uF 10x25mm LS5mm
        UPW1H561MHD

        Mfr.#: UPW1H561MHD

        OMO.#: OMO-UPW1H561MHD-NICHICON

        Aluminum Electrolytic Capacitors - Leaded 50volts 560uF 12.5x25 20% 5LS
        VS-6EWH06FNTRHM3

        Mfr.#: VS-6EWH06FNTRHM3

        OMO.#: OMO-VS-6EWH06FNTRHM3-VISHAY

        Rectifiers 6 Amp 600 Volt
        VS-5EWL06FNTR-M3

        Mfr.#: VS-5EWL06FNTR-M3

        OMO.#: OMO-VS-5EWL06FNTR-M3-VISHAY

        Rectifiers Ultrafast 5A 600V 59ns
        可用性
        库存:
        Available
        订购:
        1987
        输入数量:
        IRFHM8342TRPBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格(美元)
        数量
        单价
        小计金额
        1
        US$0.62
        US$0.62
        10
        US$0.52
        US$5.20
        100
        US$0.32
        US$31.70
        1000
        US$0.24
        US$245.00
        由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
        从...开始
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