IS66WV51216EBLL-70BLI-TR

IS66WV51216EBLL-70BLI-TR
Mfr. #:
IS66WV51216EBLL-70BLI-TR
制造商:
ISSI
描述:
SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v~3.6v,48 Ball BGA (6x8mm), RoHS
生命周期:
制造商新产品。
数据表:
IS66WV51216EBLL-70BLI-TR 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IS66WV51216EBLL-70BLI-TR 更多信息
产品属性
属性值
制造商:
国际空间站
产品分类:
静态随机存取存储器
RoHS:
Y
内存大小:
8 Mbit
组织:
512 k x 16
访问时间:
70 ns
接口类型:
平行线
电源电压 - 最大值:
3.6 V
电源电压 - 最小值:
2.5 V
电源电流 - 最大值:
28 mA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
安装方式:
贴片/贴片
包装/案例:
TFBGA-48
打包:
卷轴
内存类型:
特别提款权
系列:
IS66WV51216EBLL
类型:
异步
品牌:
国际空间站
湿气敏感:
是的
产品类别:
静态随机存取存储器
出厂包装数量:
2500
子类别:
内存和数据存储
Tags
IS66WV51216EBLL-7, IS66WV51216EBLL, IS66WV51216EB, IS66WV51216E, IS66WV5, IS66WV, IS66W, IS66, IS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 70ns 48-Pin Mini-BGA T/R
***ark
8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v
***i-Key
IC PSRAM 8M PARALLEL 48TFBGA
Pseudo SRAM/CellularRAM
ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has a SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature which does not require physical refresh. These CellularRAM devics are designed in accordance to the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.
图片 型号 描述
IS66WV51216EBLL-70BLI

Mfr.#: IS66WV51216EBLL-70BLI

OMO.#: OMO-IS66WV51216EBLL-70BLI

SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v~3.6v,48 Ball BGA (6x8mm), RoHS
IS66WV51216EALL-70BLI

Mfr.#: IS66WV51216EALL-70BLI

OMO.#: OMO-IS66WV51216EALL-70BLI

SRAM 8Mb 1.7-1.95V 70ns 512Kx16 Pseudo SRAM
IS66WV51216EALL-70BLI-TR

Mfr.#: IS66WV51216EALL-70BLI-TR

OMO.#: OMO-IS66WV51216EALL-70BLI-TR

SRAM 8Mb 1.7-1.95V 70ns 512Kx16 Pseudo SRAM
IS66WV51216EBLL-55TLI

Mfr.#: IS66WV51216EBLL-55TLI

OMO.#: OMO-IS66WV51216EBLL-55TLI

SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns
IS66WV51216EBLL-70BLI-TR

Mfr.#: IS66WV51216EBLL-70BLI-TR

OMO.#: OMO-IS66WV51216EBLL-70BLI-TR

SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v~3.6v,48 Ball BGA (6x8mm), RoHS
IS66WV51216EBLL-55BLI-TR

Mfr.#: IS66WV51216EBLL-55BLI-TR

OMO.#: OMO-IS66WV51216EBLL-55BLI-TR

SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns
IS66WV51216EBLL-55BLI

Mfr.#: IS66WV51216EBLL-55BLI

OMO.#: OMO-IS66WV51216EBLL-55BLI

SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns
IS66WV51216EBLL-55TLI

Mfr.#: IS66WV51216EBLL-55TLI

OMO.#: OMO-IS66WV51216EBLL-55TLI-INTEGRATED-SILICON-SOLUTION

SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns
IS66WV51216EALL-70BLI

Mfr.#: IS66WV51216EALL-70BLI

OMO.#: OMO-IS66WV51216EALL-70BLI-INTEGRATED-SILICON-SOLUTION

IC SRAM 8M PARALLEL 48TFBGA
IS66WV51216EBL

Mfr.#: IS66WV51216EBL

OMO.#: OMO-IS66WV51216EBL-1190

全新原装
可用性
库存:
Available
订购:
3500
输入数量:
IS66WV51216EBLL-70BLI-TR的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
Top