SGW23N60UFDTM

SGW23N60UFDTM
Mfr. #:
SGW23N60UFDTM
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 600V/ 12A
生命周期:
制造商新产品。
数据表:
SGW23N60UFDTM 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
安森美半导体
产品分类:
IGBT晶体管
RoHS:
E
技术:
包装/案例:
D2PAK-3
安装方式:
贴片/贴片
配置:
单身的
集电极-发射极电压 VCEO 最大值:
600 V
集电极-发射极饱和电压:
2.1 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
23 A
Pd - 功耗:
100 W
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
打包:
卷轴
连续集电极电流 Ic 最大值:
23 A
高度:
4.83 mm
长度:
10.67 mm
宽度:
9.65 mm
品牌:
安森美半导体/飞兆半导体
连续集电极电流:
23 A
栅极-发射极漏电流:
+/- 100 nA
产品类别:
IGBT晶体管
出厂包装数量:
800
子类别:
IGBT
单位重量:
0.079014 oz
Tags
SGW23, SGW2, SGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
IGBT 600V 23A 100W D2PAK
***ser
IGBTs 600V/ 12A
型号 制造商 描述 库存 价格
SGW23N60UFDTM
DISTI # SGW23N60UFDTM-ND
ON SemiconductorIGBT 600V 23A 100W D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Limited Supply - Call
    SGW23N60UFDTM
    DISTI # SGW23N60UFDTM
    ON SemiconductorIGBT 600V 23A 100W D2PAK - Bulk (Alt: SGW23N60UFDTM)
    RoHS: Compliant
    Min Qty: 404
    Container: Bulk
    Americas - 0
    • 4040:$0.7649
    • 2020:$0.7839
    • 1212:$0.7939
    • 808:$0.8049
    • 404:$0.8099
    SGW23N60UFDTM
    DISTI # 512-SGW23N60UFDTM
    ON SemiconductorIGBT Transistors 600V/ 12A
    RoHS: Compliant
    0
      SGW23N60UFDTMFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      RoHS: Compliant
      50477
      • 1000:$0.8200
      • 500:$0.8600
      • 100:$0.8900
      • 25:$0.9300
      • 1:$1.0000
      图片 型号 描述
      SGW23N60UFDTM

      Mfr.#: SGW23N60UFDTM

      OMO.#: OMO-SGW23N60UFDTM

      IGBT Transistors 600V/ 12A
      SGW23N60UF

      Mfr.#: SGW23N60UF

      OMO.#: OMO-SGW23N60UF-1190

      全新原装
      SGW23N60UFD

      Mfr.#: SGW23N60UFD

      OMO.#: OMO-SGW23N60UFD-1190

      全新原装
      SGW23N60UFDTM

      Mfr.#: SGW23N60UFDTM

      OMO.#: OMO-SGW23N60UFDTM-ON-SEMICONDUCTOR

      IGBT 600V 23A 100W D2PAK
      SGW23N60UFTM

      Mfr.#: SGW23N60UFTM

      OMO.#: OMO-SGW23N60UFTM-1190

      全新原装
      可用性
      库存:
      Available
      订购:
      4000
      输入数量:
      SGW23N60UFDTM的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      从...开始
      最新产品
      Top