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IRFH5020TR2PBF

IRFH5020TR2PBF
Mfr. #:
IRFH5020TR2PBF
制造商:
Infineon / IR
描述:
MOSFET MOSFT 200V 41A 59mOhm 36nC Qg
生命周期:
制造商新产品。
数据表:
IRFH5020TR2PBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
PQFN-8
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
200 V
Id - 连续漏极电流：
5.1 A
Rds On - 漏源电阻：
55 mOhms
Vgs th - 栅源阈值电压：
5 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
36 nC
最高工作温度：
+ 150 C
Pd - 功耗：
3.6 W
配置：
单身的
打包：
卷轴
高度：
0.83 mm
长度：
6 mm
晶体管类型：
1 N-Channel
宽度：
5 mm
品牌：
英飞凌/红外
正向跨导 - 最小值：
18 S
秋季时间：
6 ns
产品类别：
MOSFET
上升时间：
7.7 ns
出厂包装数量：
400
子类别：
MOSFET
第 # 部分别名：
SP001556316
单位重量：
0.070548 oz
Tags
IRFH5020, IRFH502, IRFH50, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, N-Channel, 200V, 41A, 59 mOhm, 36 nC Qg, PQFN
***et
Trans MOSFET N-CH 200V 5.1A 8-Pin QFN EP T/R
***ment14 APAC
MOSFET, N CH, 200V, 41A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:200V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:8.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:43A; Power Dissipation Pd:8.3W; Voltage Vgs Max:20V
*** Electronics
INFINEON IRFH5025TRPBF MOSFET Transistor, N Channel, 25 A, 250 V, 0.084 ohm, 10 V, 5 VNew
***ure Electronics
Single N-Channel 250 V 100 mOhm 37 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
250V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
*** Electronic Components
RF Bipolar Transistors MOSFET 250V 1 N-CH HEXFET 5MM X 6MM PQFN
***et
Trans MOSFET N-CH 250V 3.8A 8-Pin PQFN T/R
***ark
N-CHANNEL MOSFET, 250V, 32A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:20V ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 250V, 25A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.084ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 3.6W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Single N-Channel 150 V 31 mOhm 54 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***(Formerly Allied Electronics)
MOSFET; N-Channel; 150V; 56A; 31 mOhm; 33 nC Qg; PQFN
*** Source Electronics
Trans MOSFET N-CH 150V 10A 8-Pin PQFN EP T/R / MOSFET N-CH 150V 10A 8VQFN
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:150V; On Resistance Rds(on):31mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 150 V 58 mOhm 21 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package, PG-TDSON-8, RoHS
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ment14 APAC
N CH MOSFET, 150V, 5A, 8-PQFN; Transisto; N CH MOSFET, 150V, 5A, 8-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; No. of Pins:8
***ernational Rectifier
150V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, N-Channel, 150V, 56A, 31 mOhm, 33 nC Qg, PQFN
***ment14 APAC
MOSFET, N CH, 150V, 56A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:150V; On Resistance Rds(on):25.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Power Dissipation Pd:250W; Voltage Vgs Max:20V
型号 制造商 描述 库存 价格
IRFH5020TR2PBF
DISTI # IRFH5020TR2PBFCT-ND		Infineon Technologies AGMOSFET N-CH 200V 5.1A 8PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IRFH5020TR2PBF
    DISTI # IRFH5020TR2PBFDKR-ND    		Infineon Technologies AGMOSFET N-CH 200V 5.1A 8PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IRFH5020TR2PBF
      DISTI # 70019254      		Infineon Technologies AGMOSFET,N-Channel,200V,41A,59 mOhm,36 nC Qg,PQFN
      RoHS: Compliant      		0
      • 400:$1.9700
      • 800:$1.9310
      • 2000:$1.8720
      • 4000:$1.7930
      • 10000:$1.6750
      IRFH5020TR2PBF
      DISTI # 942-IRFH5020TR2PBF      		Infineon Technologies AGMOSFET MOSFT 200V 41A 59mOhm 36nC Qg
      RoHS: Compliant      		0
        图片 型号 描述
        IRFH5020TRPBF

        Mfr.#: IRFH5020TRPBF

        OMO.#: OMO-IRFH5020TRPBF

        		 MOSFET 200V 1 N-CH HEXFET 55mOhms 11nC
        IRFH5025TRPBF

        Mfr.#: IRFH5025TRPBF

        OMO.#: OMO-IRFH5025TRPBF

        		 MOSFET 250V 1 N-CH HEXFET 5MM X 6MM PQFN
        IRFH5025TR2PBF

        Mfr.#: IRFH5025TR2PBF

        OMO.#: OMO-IRFH5025TR2PBF

        		 MOSFET MOSFT 250V 31A 104mOhm 36nC Qg
        IRFH5020TR2PBF

        Mfr.#: IRFH5020TR2PBF

        OMO.#: OMO-IRFH5020TR2PBF

        		 MOSFET MOSFT 200V 41A 59mOhm 36nC Qg
        IRFH5020TRPBF-CUT TAPE

        Mfr.#: IRFH5020TRPBF-CUT TAPE

        OMO.#: OMO-IRFH5020TRPBF-CUT-TAPE-1190

        		 全新原装
        IRFH5020TR2PBF

        Mfr.#: IRFH5020TR2PBF

        OMO.#: OMO-IRFH5020TR2PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 200V 5.1A 8PQFN
        IRFH5020TRPBF

        Mfr.#: IRFH5020TRPBF

        OMO.#: OMO-IRFH5020TRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 200V 5.1A 8PQFN
        IRFH5020TRPBF,5020,IR502

        Mfr.#: IRFH5020TRPBF,5020,IR502

        OMO.#: OMO-IRFH5020TRPBF-5020-IR502-1190

        		 全新原装
        IRFH5020TRPBF.

        Mfr.#: IRFH5020TRPBF.

        OMO.#: OMO-IRFH5020TRPBF--1190

        		 全新原装
        IRFH5025TRPBF

        Mfr.#: IRFH5025TRPBF

        OMO.#: OMO-IRFH5025TRPBF-INFINEON-TECHNOLOGIES

        		 RF Bipolar Transistors MOSFET 250V 1 N-CH HEXFET 5MM X 6MM PQFN
        可用性
        库存:
        Available
        订购:
        3000
        输入数量:
        IRFH5020TR2PBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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