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MRF6S21190HSR3

MRF6S21190HSR3
Mfr. #:
MRF6S21190HSR3
制造商:
NXP / Freescale
描述:
RF MOSFET Transistors HV6 2.1GHZ 54W NI880S
生命周期:
制造商新产品。
数据表:
MRF6S21190HSR3 数据表
交货:
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支付:
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HTML Datasheet:
MRF6S21190HSR3 DatasheetMRF6S21190HSR3 Datasheet (P4-P6)MRF6S21190HSR3 Datasheet (P7-P9)MRF6S21190HSR3 Datasheet (P10-P11)
ECAD Model:
产品属性
属性值
制造商：
恩智浦
产品分类：
射频 MOSFET 晶体管
RoHS：
Y
晶体管极性：
N通道
技术：
硅
Vds - 漏源击穿电压：
68 V
最低工作温度：
- 65 C
最高工作温度：
+ 150 C
安装方式：
贴片/贴片
包装/案例：
NI-880S
打包：
卷轴
配置：
单身的
高度：
5.08 mm
长度：
23.24 mm
系列：
MRF6S21190H
类型：
射频功率MOSFET
宽度：
13.8 mm
品牌：
恩智浦/飞思卡尔
频道模式：
增强
产品类别：
射频 MOSFET 晶体管
出厂包装数量：
250
子类别：
MOSFET
Vgs - 栅源电压：
- 0.5 V, 12 V
单位重量：
0.238367 oz
Tags
MRF6S21190HS, MRF6S2119, MRF6S211, MRF6S21, MRF6S2, MRF6S, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
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Trans RF MOSFET N-CH 68V 3-Pin NI-880S T/R
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***i-Key
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***or
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***ment14 APAC
RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G
***i-Key Marketplace
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***nell
RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G; Drain Source Voltage Vds: 68V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 2.2GHz; Operating Frequency Max: 1.6GHz; RF Transistor Case: TO-270G; No. of
***W
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***ark
RF POWER MOSFET, LATERAL N-CH BROADBAND, 68V, TO-270-2 GULL; Transistor Type:RF FET; Drain Source Voltage Vds:68V; Power Dissipation Pd:10W; Operating Frequency Range:450MHz to 1500MHz; Operating Temperature Range:-10°C to +150°C ;RoHS Compliant: Yes
***nell
TRANSISTOR, RF, 68V, TO-270-2; Drain Source Voltage Vds: 68VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 450MHz; Operating Frequency Max: 1500MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***W
RF Power Transistor,1 to 2000 MHz, 4 W, Typ Gain in dB is 18 @ 1960 MHz, 28 V, LDMOS, SOT1811
***ment14 APAC
RF MOSFET, N CHANNEL, 68V, 466-03; Transistor Type:RF MOSFET; Drain Source Voltage Vds:68V; Operating Frequency Min:1MHz; Operating Frequency Max:2GHz; RF Transistor Case:PLD-1.5; No. of Pins:4; Filter Terminals:Surface Mount
***ark
RF MOSFET, N CHANNEL, 68V, 466-03; Transistor Type:RF FET; Drain Source Voltage, Vds:68V; RF Transistor Case:466; Gain:18dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:1960MHz ;RoHS Compliant: Yes
***nell
TRANSISTOR, RF, 68V, PLD-1.5-4; Drain Source Voltage Vds: 68VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: PLD-1.5; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
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***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
*** Source Electronics
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***nell
MOSFET, N-CH, 50V, SOT-523-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 160mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 3.1ohm; Rds(on) Test Voltage Vgs: 4; Available until stocks are exhausted
***emi
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MOSFET, N-CH, 50V, 0.22A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Source Voltage Vds:50V; On Resistance
***r Electronics
Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***nell
MOSFET, N-CH, 50V, 0.22A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 600mV; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 220 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 2.5 / Gate-Source Voltage V = 12 / Fall Time ns = 35 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 60 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350
型号 制造商 描述 库存 价格
MRF6S21190HSR3
DISTI # MRF6S21190HSR3-ND		NXP SemiconductorsFET RF 68V 2.17GHZ NI880S
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Limited Supply - Call
    MRF6S21190HSR3
    DISTI # 841-MRF6S21190HSR3    		NXP SemiconductorsRF MOSFET Transistors HV6 2.1GHZ 54W NI880S
    RoHS: Compliant    		0
      图片 型号 描述
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      OMO.#: OMO-MRF6S21140HSR5

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      MRF6S21100NBR1

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      MRF6S21050LSR5

      Mfr.#: MRF6S21050LSR5

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      MRF6S21050LSR5

      Mfr.#: MRF6S21050LSR5

      OMO.#: OMO-MRF6S21050LSR5-NXP-SEMICONDUCTORS

      		 FET RF 68V 2.16GHZ NI-400S
      MRF6S21100HR3

      Mfr.#: MRF6S21100HR3

      OMO.#: OMO-MRF6S21100HR3-NXP-SEMICONDUCTORS

      		 FET RF 68V 2.17GHZ NI-780
      MRF6S21100NBR1

      Mfr.#: MRF6S21100NBR1

      OMO.#: OMO-MRF6S21100NBR1-NXP-SEMICONDUCTORS

      		 FET RF 68V 2.16GHZ TO272-4
      MRF6S21140HR5

      Mfr.#: MRF6S21140HR5

      OMO.#: OMO-MRF6S21140HR5-NXP-SEMICONDUCTORS

      		 FET RF 68V 2.12GHZ NI-880
      MRF6S21100MBR1

      Mfr.#: MRF6S21100MBR1

      OMO.#: OMO-MRF6S21100MBR1-NXP-SEMICONDUCTORS

      		 FET RF 68V 2.16GHZ TO272-4
      MRF6S21060BR1

      Mfr.#: MRF6S21060BR1

      OMO.#: OMO-MRF6S21060BR1-1190

      		 全新原装
      MRF6S21140HR3

      Mfr.#: MRF6S21140HR3

      OMO.#: OMO-MRF6S21140HR3-NXP-SEMICONDUCTORS

      		 FET RF 68V 2.12GHZ NI-880
      可用性
      库存:
      Available
      订购:
      5000
      输入数量:
      MRF6S21190HSR3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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