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IPB042N10N3GATMA1

IPB042N10N3GATMA1
Mfr. #:
IPB042N10N3GATMA1
制造商:
Infineon Technologies
描述:
MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
生命周期:
制造商新产品。
数据表:
IPB042N10N3GATMA1 数据表
交货:
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ECAD Model:
更多信息:
IPB042N10N3GATMA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
PG-TO-263-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
100 V
Id - 连续漏极电流：
100 A
Rds On - 漏源电阻：
4.2 mOhms
Vgs th - 栅源阈值电压：
2 V
Vgs - 栅源电压：
10 V
Qg - 门电荷：
88 nC
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
Pd - 功耗：
214 W
配置：
单身的
频道模式：
增强
商品名：
优化MOS
打包：
卷轴
高度：
4.4 mm
长度：
10 mm
系列：
OptiMOS 3
晶体管类型：
1 N-Channel
宽度：
9.25 mm
品牌：
英飞凌科技
正向跨导 - 最小值：
73 S
秋季时间：
14 ns
产品类别：
MOSFET
上升时间：
59 ns
出厂包装数量：
1000
子类别：
MOSFET
典型关断延迟时间：
48 ns
典型的开启延迟时间：
27 ns
第 # 部分别名：
G IPB042N10N3 IPB42N1N3GXT SP000446880
单位重量：
0.139332 oz
Tags
IPB042N10N3GA, IPB042N10N3G, IPB042N10N3, IPB042N1, IPB042, IPB04, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 100 V 4.2 mOhm 88 nC OptiMOS™ Power Mosfet - D2PAK
***nell
MOSFET, N CH, 100V, 100A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 214W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
*** Source Electronics
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***roFlash
Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0095Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ow.cn
Trans MOSFET N-CH 80V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
***ark
MOSFET, N-CH, 80V, 100A, 175DEG C, 214W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 80V, 100A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 214W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
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***ure Electronics
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Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:100V; On Resistance
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***nell
MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***et
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***ment14 APAC
MOSFET, N CH, 70A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
*** Source Electronics
Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) D2PAK / MOSFET N-CH 100V 90A D2PAK
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***ark
Mosfet, N Channel, 100V, 90A, To-263-3; Channel Type:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 100V, 90A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:300W; Voltage Vgs Max:20V
***el Electronic
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N-Channel 100 V 4 mOhm 375 W SMT ThunderFET Power Mosfet - TO-263
***ment14 APAC
MOSFET, N-CH, 100V, 120A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Source Voltage Vds:100V; On Resistance
***ark
MOSFET, N-CH, 100V, 120A, 175DEG C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 100V, 120A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
型号 制造商 描述 库存 价格
IPB042N10N3GATMA1
DISTI # V72:2272_06378065		Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		36
  • 25:$1.9617
  • 10:$1.9682
  • 1:$2.2261
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6222In Stock
  • 500:$1.8588
  • 100:$2.3899
  • 10:$2.9740
  • 1:$3.2900
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6222In Stock
  • 500:$1.8588
  • 100:$2.3899
  • 10:$2.9740
  • 1:$3.2900
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		6000In Stock
  • 1000:$1.4953
IPB042N10N3GATMA1
DISTI # 31049885		Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$1.4933
IPB042N10N3GATMA1
DISTI # 31010737		Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		36
  • 25:$1.9617
  • 10:$1.9682
  • 7:$2.2261
IPB042N10N3GXT
DISTI # IPB042N10N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB042N10N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 1000
  • 1000:$1.2900
  • 2000:$1.1900
  • 4000:$1.1900
  • 6000:$1.1900
  • 10000:$1.1900
IPB042N10N3GATMA1
DISTI # 47Y8047		Infineon Technologies AGMOSFET Transistor, N Channel, 100 A, 100 V, 0.0036 ohm, 10 V, 2.7 V , RoHS Compliant: Yes705
  • 1:$2.7600
  • 10:$2.3500
  • 25:$2.1900
  • 50:$2.0400
  • 100:$1.8800
  • 250:$1.7700
  • 500:$1.6500
IPB042N10N3GATMA1Infineon Technologies AGSingle N-Channel 100 V 4.2 mOhm 88 nC OptiMOS Power Mosfet - D2PAK
RoHS: Not Compliant		1000Reel
  • 1000:$1.2400
IPB042N10N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 100A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		500
  • 1000:$1.0000
  • 500:$1.0500
  • 100:$1.1000
  • 25:$1.1400
  • 1:$1.2300
IPB042N10N3GATMA1
DISTI # 726-IPB042N10N3GATMA		Infineon Technologies AGMOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
RoHS: Compliant		1607
  • 1:$2.7500
  • 10:$2.3400
  • 100:$1.8700
  • 500:$1.6400
  • 1000:$1.3600
  • 2000:$1.2600
IPB042N10N3 G
DISTI # 726-IPB042N10N3G		Infineon Technologies AGMOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
RoHS: Compliant		830
  • 1:$2.7600
  • 10:$2.3500
  • 100:$1.8800
  • 500:$1.6500
  • 1000:$1.3600
IPB042N10N3GATMA1
DISTI # 8275237		Infineon Technologies AGMOSFET N-CH 100A 100V OPTIMOS3 TO263, PK370
  • 10:£1.5750
  • 50:£1.3280
  • 250:£1.1860
  • 500:£1.0290
IPB042N10N3GATMA1
DISTI # 8275237P		Infineon Technologies AGMOSFET N-CH 100A 100V OPTIMOS3 TO263, RL980
  • 50:£1.3280
  • 250:£1.1860
  • 500:£1.0290
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,100A,214W,PG-TO263-3778
  • 1:$1.8961
  • 3:$1.6261
  • 10:$1.3077
  • 100:$1.1371
  • 1000:$1.0598
IPB042N10N3GATMA1
DISTI # 2443431		Infineon Technologies AGMOSFET, N CH, 100V, 100A, TO-263-3
RoHS: Compliant		680
  • 1:$4.3700
  • 10:$3.7200
  • 100:$2.9800
  • 500:$2.6200
  • 1000:$2.1600
  • 2000:$2.0100
  • 5000:$1.9400
  • 10000:$1.8700
IPB042N10N3GATMA1
DISTI # XSFP00000153641		Infineon Technologies AGPowerField-EffectTransistor,100AI(D),100V,0.0042ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-263AB
RoHS: Compliant		1346
  • 1000:$1.6500
  • 1346:$1.5500
IPB042N10N3GATMA1
DISTI # 2443431		Infineon Technologies AGMOSFET, N CH, 100V, 100A, TO-263-3
RoHS: Compliant		680
  • 1:£2.3700
  • 10:£1.3400
  • 100:£1.2700
  • 250:£1.2000
  • 500:£1.0400
IPB042N10N3GATMA1
DISTI # C1S322000212747		Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		36
  • 25:$1.9617
  • 10:$1.9682
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可用性
库存:
Available
订购:
1986
输入数量:
IPB042N10N3GATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$2.62
US$2.62
10
US$2.22
US$22.20
100
US$1.78
US$178.00
500
US$1.55
US$775.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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