FFSD10120A

FFSD10120A
Mfr. #:
FFSD10120A
制造商:
ON Semiconductor / Fairchild
描述:
Schottky Diodes & Rectifiers Silicon Carbide Schottky Diode
生命周期:
制造商新产品。
数据表:
FFSD10120A 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FFSD10120A 更多信息
产品属性
属性值
制造商:
安森美半导体
产品分类:
肖特基二极管和整流器
RoHS:
Y
产品:
肖特基碳化硅二极管
安装方式:
贴片/贴片
包装/案例:
D-PAK-3
如果 - 正向电流:
10 A
Vrrm - 重复反向电压:
1200 V
Vf - 正向电压:
1.45 V
Ifsm - 正向浪涌电流:
90 A
配置:
单身的
技术:
碳化硅
Ir - 反向电流:
200 uA
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
系列:
FFSD10120A
打包:
卷轴
品牌:
安森美半导体/飞兆半导体
Pd - 功耗:
283 W
产品类别:
肖特基二极管和整流器
出厂包装数量:
2500
子类别:
二极管和整流器
Vr - 反向电压:
1200 V
单位重量:
0.009184 oz
Tags
FFSD10, FFSD1, FFSD, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 22A, 1200V V(RRM), Silicon Carbide, TO-252AA
***ical
Rectifier Diode Schottky SiC 1.2KV 22A 3-Pin(2+Tab) DPAK T/R
***rchild Semiconductor
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased powerdensity, reduced EMI, and reduced system size & cost.
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Silicon Carbide Schottky Diodes
ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
型号 制造商 描述 库存 价格
FFSD10120A
DISTI # 26994630
ON SemiconductorSilicon Carbide Schottky Diode160000
  • 2500:$3.3910
FFSD10120A
DISTI # FFSD10120AOSCT-ND
ON SemiconductorDIODE SCHOTTKY 1.2KV TO252
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)
2483In Stock
  • 1000:$3.2689
  • 500:$3.8760
  • 100:$4.5532
  • 10:$5.5570
  • 1:$6.1900
FFSD10120A
DISTI # FFSD10120AOSDKR-ND
ON SemiconductorDIODE SCHOTTKY 1.2KV TO252
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®
2483In Stock
  • 1000:$3.2689
  • 500:$3.8760
  • 100:$4.5532
  • 10:$5.5570
  • 1:$6.1900
FFSD10120A
DISTI # FFSD10120AOSTR-ND
ON SemiconductorDIODE SCHOTTKY 1.2KV TO252
RoHS: Not compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$3.3827
FFSD10120A
DISTI # V36:1790_18470534
ON SemiconductorSilicon Carbide Schottky Diode0
  • 2500000:$2.8220
  • 1250000:$2.8240
  • 250000:$3.0140
  • 25000:$3.3380
  • 2500:$3.3910
FFSD10120A
DISTI # FFSD10120A
ON SemiconductorDiode SiC Schottky 1200V 22A 3-Pin TO-252 T/R - Tape and Reel (Alt: FFSD10120A)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$2.8900
  • 15000:$2.9900
  • 2500:$3.0900
  • 5000:$3.0900
  • 10000:$3.0900
FFSD10120A
DISTI # FFSD10120A
ON SemiconductorDiode SiC Schottky 1200V 22A 3-Pin TO-252 T/R (Alt: FFSD10120A)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€2.9900
  • 15000:€3.1900
  • 10000:€3.2900
  • 5000:€3.3900
  • 2500:€3.6900
FFSD10120A
DISTI # 512-FFSD10120A
ON SemiconductorSchottky Diodes & Rectifiers Silicon Carbide Schottky Diode
RoHS: Compliant
3847
  • 1:$6.4100
  • 10:$5.4400
  • 100:$4.7200
  • 250:$4.4800
  • 500:$4.0200
  • 1000:$3.4700
图片 型号 描述
IRS21867STRPBF

Mfr.#: IRS21867STRPBF

OMO.#: OMO-IRS21867STRPBF

Gate Drivers Hi CUR Iout = 4A robust HS/LS Gt Drvr
SMBJ5338B-TP

Mfr.#: SMBJ5338B-TP

OMO.#: OMO-SMBJ5338B-TP

Zener Diodes 5W 5.1V
UJ3C065080B3

Mfr.#: UJ3C065080B3

OMO.#: OMO-UJ3C065080B3

MOSFET 650V/80mOhm SiC CASCODE G3
FDP060AN08A0

Mfr.#: FDP060AN08A0

OMO.#: OMO-FDP060AN08A0

MOSFET 75V 80a .6Ohms/VGS=1V
FDD86567-F085

Mfr.#: FDD86567-F085

OMO.#: OMO-FDD86567-F085

MOSFET NMOS DPAK 60V 3.2 MOHM
ST-LINK/V2

Mfr.#: ST-LINK/V2

OMO.#: OMO-ST-LINK-V2

Programmers - Processor Based STM8S STM32 Programr 5V USB 2.0 JTAG DFU
LAUNCHXL-F280049C

Mfr.#: LAUNCHXL-F280049C

OMO.#: OMO-LAUNCHXL-F280049C

Development Boards & Kits - TMS320 C2000 F280049C PICCOLO LAUNCHPAD
IRS21867STRPBF

Mfr.#: IRS21867STRPBF

OMO.#: OMO-IRS21867STRPBF-INFINEON-TECHNOLOGIES

Gate Drivers Hi CUR Iout = 4A robust HS/LS Gt Drv
ST-LINK/V2

Mfr.#: ST-LINK/V2

OMO.#: OMO-ST-LINK-V2-STMICROELECTRONICS

全新原装
LAUNCHXL-F280049C

Mfr.#: LAUNCHXL-F280049C

OMO.#: OMO-LAUNCHXL-F280049C-TEXAS-INSTRUMENTS

LAUNCHPAD TMS320F280049C EVAL BD
可用性
库存:
Available
订购:
1986
输入数量:
FFSD10120A的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$6.41
US$6.41
10
US$5.44
US$54.40
100
US$4.72
US$472.00
250
US$4.48
US$1 120.00
500
US$4.02
US$2 010.00
1000
US$3.47
US$3 470.00
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