AS4C128M32MD2A-18BIN

Mfr. #:: AS4C128M32MD2A-18BIN
制造商:: Alliance Memory
描述:: IC DRAM 4G PARALLEL 134FBGA
生命周期:: 制造商新产品。
数据表:: AS4C128M32MD2A-18BIN 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: AS4C128M32MD2A-18BIN 更多信息

产品属性
属性值

Tags: AS4C128M32MD2A, AS4C128M3, AS4C12, AS4C1, AS4C, AS4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

AS4C128M32MD2A-18BIN 更多信息

DDR2 SDRAM: Alliance Memory DDR2 SDRAM is designed to comply with DDR2 SDRAM key features. Features such as posted CAS# with additive latency, Write latency=Read latency -1 and On-Die Termination (ODT). All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS#) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in RAS #, CAS# multiplexing style.

Low-Power DDR2 SDRAM: Alliance Memory Low-Power DDR2 SDRAM are high-speed CMOS and dynamic-access memory that are internally configured as a 8-bank memory device. These DDR2 SDRAM feature 4-bit pre-fetch DDR architecture, programmable READ and WRITE latencies, auto Temperature Compensated Self Refresh (TCSR), and clock stop capability. The DDR2 SDRAM reduces the number of input pins in the system by using a double data rate architecture on the Command/Address (CA) bus. This CA bus is used to transmit address, command, and bank information. These DDR2 SDRAM can achieve high-speed operation by using a double data rate architecture on the DQ (bidirectional/differential data bus) pins.

Market price

型号	制造商	描述	库存	价格
AS4C128M32MD2A-18BIN DISTI # 1450-1463-ND	Alliance Memory Inc	IC DRAM 4G PARALLEL 134FBGA RoHS: Compliant Min Qty: 1 Container: Tray	144In Stock	1008:$9.4547 504:$9.7807 336:$9.8822 168:$10.3965 50:$11.8094 25:$11.8744 10:$12.1500 1:$13.1200
AS4C128M32MD2A-18BINTR DISTI # AS4C128M32MD2A-18BINTR-ND	Alliance Memory Inc	IC DRAM 4G PARALLEL 134FBGA RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$9.5232
AS4C128M32MD2A-18BIN DISTI # AS4C128M32MD2A-18BIN	Alliance Memory Inc	DRAM Chip DDR2 SDRAM 4Gbit 128M X 32 134-Pin FBGA Tray - Trays (Alt: AS4C128M32MD2A-18BIN) RoHS: Compliant Min Qty: 168 Container: Tray	Americas - 0	1680:$8.2900 1008:$8.4900 672:$8.6900 336:$8.8900 168:$8.9900
AS4C128M32MD2A-18BIN DISTI # AS4C128M32MD2A-18BIN	Alliance Memory Inc	DRAM Chip DDR2 SDRAM 4Gbit 128M X 32 134-Pin FBGA Tray (Alt: AS4C128M32MD2A-18BIN) RoHS: Compliant Min Qty: 1 Container: Tray	Europe - 0	1000:€8.3900 500:€8.9900 100:€9.2900 50:€9.6900 25:€10.0900 10:€10.4900 1:€11.3900
AS4C128M32MD2A-18BINTR DISTI # AS4C128M32MD2A-18BINTR	Alliance Memory Inc	DRAM Chip DDR2 SDRAM 4Gbit 128M X 32 134-Pin FBGA T/R - Tape and Reel (Alt: AS4C128M32MD2A-18BINTR) Min Qty: 1000 Container: Reel	Americas - 0	10000:$8.1900 6000:$8.3900 4000:$8.6900 2000:$8.9900 1000:$9.0900
AS4C128M32MD2A-18BIN DISTI # 913-4C12832MD2A18BIN	Alliance Memory Inc	DRAM 4G 1.2V/1.8V 533MHz 128Mx32 Mobile DDR2 RoHS: Compliant	116	1:$13.7500 10:$12.7300 25:$12.4400 50:$12.3800 100:$10.9000 250:$10.3600 500:$10.1800
AS4C128M32MD2A-18BINTR DISTI # 913-4C12832MD2A18BIT	Alliance Memory Inc	DRAM 4G 1.2V/1.8V 533MHz 128Mx32 Mobile DDR2 RoHS: Compliant	0	1000:$9.9800
AS4C128M32MD2A-18BIN	Alliance Memory Inc	4G 128M X 32LP DDR21.2V 134 BALL BGA533 MHZI TEMP	692

相关产品

图片	型号	描述
	Mfr.#: AS4C128M32MD2A-18BINTR OMO.#: OMO-AS4C128M32MD2A-18BINTR	DRAM 4G 1.2V/1.8V 533MHz 128Mx32 Mobile DDR2
	Mfr.#: AS4C128M32MD2A-25BIN OMO.#: OMO-AS4C128M32MD2A-25BIN	DRAM 4G 1.2V/1.8V 400MHz 128Mx32 Mobile DDR2
	Mfr.#: AS4C128M32MD2A-18BIN OMO.#: OMO-AS4C128M32MD2A-18BIN	DRAM 4G 1.2V/1.8V 533MHz 128Mx32 Mobile DDR2
	Mfr.#: AS4C128M32MD2-18BINTR OMO.#: OMO-AS4C128M32MD2-18BINTR	DRAM 4G 1.2V/1.8V 533MHz 128Mx32 Mobile DDR2
	Mfr.#: AS4C128M32MD2-18BCN OMO.#: OMO-AS4C128M32MD2-18BCN-ALLIANCE-MEMORY	IC DRAM 4G PARALLEL 134FBGA
	Mfr.#: AS4C128M32MD2-18BCNTR OMO.#: OMO-AS4C128M32MD2-18BCNTR-ALLIANCE-MEMORY	IC DRAM 4G PARALLEL 134FBGA
	Mfr.#: AS4C128M32MD2-18BIN OMO.#: OMO-AS4C128M32MD2-18BIN-ALLIANCE-MEMORY	IC DRAM 4G PARALLEL 134FBGA
	Mfr.#: AS4C128M32MD2-18BINTR OMO.#: OMO-AS4C128M32MD2-18BINTR-ALLIANCE-MEMORY	IC DRAM 4G PARALLEL 134FBGA
	Mfr.#: AS4C128M32MD2A-18BIN OMO.#: OMO-AS4C128M32MD2A-18BIN-ALLIANCE-MEMORY	IC DRAM 4G PARALLEL 134FBGA
	Mfr.#: AS4C128M32MD2A-25BIN OMO.#: OMO-AS4C128M32MD2A-25BIN-ALLIANCE-MEMORY	IC DRAM 4G PARALLEL 134FBGA