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SI4166DY-T1-GE3

SI4166DY-T1-GE3
Mfr. #:
SI4166DY-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET 30V Vds 20V Vgs SO-8
生命周期:
制造商新产品。
数据表:
SI4166DY-T1-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SI4166DY-T1-GE3 DatasheetSI4166DY-T1-GE3 Datasheet (P4-P6)SI4166DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
更多信息:
SI4166DY-T1-GE3 更多信息
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
SO-8
商品名：
沟槽场效应晶体管
打包：
卷轴
高度：
1.75 mm
长度：
4.9 mm
系列：
SI4
宽度：
3.9 mm
品牌：
威世 / Siliconix
产品类别：
MOSFET
出厂包装数量：
2500
子类别：
MOSFET
第 # 部分别名：
SI4166DY-GE3
单位重量：
0.006596 oz
Tags
SI4166DY-T, SI4166D, SI4166, SI416, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    T***r
    T***r
    DE

    Top! Works!

    2019-01-15
    E**u
    E**u
    PT

    works very well. recommend

    2019-04-11
    A***a
    A***a
    RU

    Works fine

    2019-04-14
***ure Electronics
Single N-Channel 30 V 3.9 mOhm 6.5 W Surface Mount Power Mosfet - SOIC-8
*** Source Electronics
MOSFET N-CH 30V 30.5A 8-SOIC / Trans MOSFET N-CH 30V 30.5A 8-Pin SOIC N T/R
***nell
MOSFET, N CH, 30V, 30.5A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:30.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型号 制造商 描述 库存 价格
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 30.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1130In Stock
  • 1000:$0.7138
  • 500:$0.9041
  • 100:$1.1659
  • 10:$1.4750
  • 1:$1.6700
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 30.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1130In Stock
  • 1000:$0.7138
  • 500:$0.9041
  • 100:$1.1659
  • 10:$1.4750
  • 1:$1.6700
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 30.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.6468
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R (Alt: SI4166DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4166DY-T1-GE3
    DISTI # SI4166DY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4166DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.6329
    • 5000:$0.6319
    • 10000:$0.6299
    • 15000:$0.6279
    • 25000:$0.6269
    SI4166DY-T1-GE3
    DISTI # SI4166DY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R (Alt: SI4166DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 2500:€0.6869
    • 5000:€0.4689
    • 10000:€0.4029
    • 15000:€0.3719
    • 25000:€0.3469
    SI4166DY-T1-GE3
    DISTI # 85W3205    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 85W3205)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$0.7990
    SI4166DY-T1-GE3
    DISTI # 97W2647    		Vishay IntertechnologiesMOSFET, N CH, 30V, 30.5A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:30.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0032ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power , RoHS Compliant: Yes2250
    • 1:$1.4700
    • 10:$1.2100
    • 25:$1.1200
    • 50:$1.0200
    • 100:$0.9290
    • 500:$0.7990
    • 1000:$0.7010
    SI4166DY-T1-GE3
    DISTI # 781-SI4166DY-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
    RoHS: Compliant    		4268
    • 1:$1.4700
    • 10:$1.2100
    • 100:$0.9290
    • 500:$0.7990
    • 1000:$0.7560
    • 2500:$0.7000
    SI4166DY-T1-GE3
    DISTI # 2335305    		Vishay IntertechnologiesMOSFET, N CH, 30V, 30.5A, SOIC
    RoHS: Compliant    		2250
    • 1:$2.3400
    • 10:$1.9200
    • 100:$1.4700
    • 500:$1.2600
    • 1000:$1.1200
    • 2500:$1.1100
    SI4166DY-T1-GE3
    DISTI # 2335305    		Vishay IntertechnologiesMOSFET, N CH, 30V, 30.5A, SOIC
    RoHS: Compliant    		4741
    • 5:£1.1300
    • 25:£0.9270
    • 100:£0.7100
    • 250:£0.6610
    • 500:£0.6100
    SI4166DY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
    RoHS: Compliant    		Americas - 5000
    • 2500:$0.4080
    • 5000:$0.3860
    • 10000:$0.3730
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    Mfr.#: GCM21BC71E475KE36L

    OMO.#: OMO-GCM21BC71E475KE36L-MURATA-ELECTRONICS

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    		 AUTOMOTIVE SCHOTTKY BARRIER DIOD
    可用性
    库存:
    Available
    订购:
    1986
    输入数量:
    SI4166DY-T1-GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$1.47
    US$1.47
    10
    US$1.21
    US$12.10
    100
    US$0.93
    US$92.90
    500
    US$0.80
    US$399.50
    1000
    US$0.76
    US$756.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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