AS4C64M8D1-5BIN

AS4C64M8D1-5BIN
Mfr. #:
AS4C64M8D1-5BIN
制造商:
Alliance Memory
描述:
DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
生命周期:
制造商新产品。
数据表:
AS4C64M8D1-5BIN 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
AS4C64M8D1-5BIN 更多信息
产品属性
属性值
制造商:
联盟记忆
产品分类:
动态随机存取存储器
RoHS:
Y
类型:
SDRAM - DDR1
数据总线宽度:
8 bit
组织:
64 M x 8
包装/案例:
FBGA-60
内存大小:
512 Mbit
最大时钟频率:
200 MHz
访问时间:
0.7 ns
电源电压 - 最大值:
2.7 V
电源电压 - 最小值:
2.3 V
电源电流 - 最大值:
130 mA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
系列:
AS4C64M8D1
打包:
托盘
品牌:
联盟记忆
安装方式:
贴片/贴片
湿气敏感:
是的
产品类别:
动态随机存取存储器
出厂包装数量:
240
子类别:
内存和数据存储
Tags
AS4C64M8D1-5B, AS4C64M8D1, AS4C64M8D, AS4C64M8, AS4C6, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**o
    E**o
    TR

    Thanks products as I want

    2019-06-03
    S***r
    S***r
    TZ

    Good

    2019-09-13
    A***a
    A***a
    DE

    very good quality. fast delivery

    2019-05-06
    V***v
    V***v
    RU

    Very fast shipping!!

    2019-04-02
***metry Electronics
DDR1 512MB 200MHz 400Mbps/pin 2.5V 64M x 8 60ball TFBGA
***et
DRAM Chip DDR1 512M-Bit 64Mx8 2.5V -40 to 85°C 60-ball FBGA
***se
DDR1 512Mb 64M x 8 2.5v BGA 200MHz Industriall Temp
***i-Key
IC DRAM 512MBIT PARALLEL 60FBGA
DDR1 Synchronous DRAM
Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
型号 制造商 描述 库存 价格
AS4C64M8D1-5BIN
DISTI # 1450-1331-ND
Alliance Memory IncIC DRAM 512M PARALLEL 60FBGA
RoHS: Compliant
Min Qty: 240
Container: Tray
Temporarily Out of Stock
  • 1200:$3.5428
  • 720:$3.7264
  • 480:$3.8688
  • 240:$3.8833
AS4C64M8D1-5BINTR
DISTI # AS4C64M8D1-5BINTR-ND
Alliance Memory IncIC DRAM 512M PARALLEL 60FBGA
RoHS: Not compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$3.5828
AS4C64M8D1-5BIN
DISTI # AS4C64M8D1-5BIN
Alliance Memory IncDRAM Chip DDR1 512M-Bit 64Mx8 2.5V -40 to 85°C 60-ball FBGA - Trays (Alt: AS4C64M8D1-5BIN)
RoHS: Compliant
Min Qty: 240
Container: Tray
Americas - 0
  • 240:$3.6900
  • 480:$3.5900
  • 960:$3.4900
  • 1440:$3.3900
  • 2400:$3.3900
AS4C64M8D1-5BIN
DISTI # AS4C64M8D1-5BIN
Alliance Memory IncDRAM Chip DDR1 512M-Bit 64Mx8 2.5V -40 to 85°C 60-ball FBGA (Alt: AS4C64M8D1-5BIN)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€3.6900
  • 10:€3.3900
  • 25:€3.2900
  • 50:€3.0900
  • 100:€2.9900
  • 500:€2.8900
  • 1000:€2.6900
AS4C64M8D1-5BINTR
DISTI # AS4C64M8D1-5BINTR
Alliance Memory IncDRAM Chip DDR SDRAM 512Mbit 64M X 8 60-Pin FBGA T/R - Tape and Reel (Alt: AS4C64M8D1-5BINTR)
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$2.9900
  • 5000:$2.7900
  • 10000:$2.6900
  • 15000:$2.6900
  • 25000:$2.5900
AS4C64M8D1-5BIN
DISTI # 913-AS4C64M8D1-5BIN
Alliance Memory IncDRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
RoHS: Compliant
72
  • 1:$5.1500
  • 10:$4.6700
  • 25:$4.5700
  • 50:$4.5400
  • 100:$4.0700
  • 250:$4.0600
  • 500:$3.9100
  • 1000:$3.5500
  • 2000:$3.3800
AS4C64M8D1-5BINTR
DISTI # 913-AS4C64M8D1-5BINT
Alliance Memory IncDRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
RoHS: Compliant
0
  • 2500:$3.4500
AS4C64M8D1-5BINAlliance Memory Inc512MbDDR164M x 82.5v BGA200MHzIndustriall Temp30227
    AS4C64M8D1-5BINTRAlliance Memory IncDDR SDRAM 512M 64M x 8 2.5V 60ball BGA2500
      图片 型号 描述
      GRF5020

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      RF Amplifier .01-6GHz Gain 17dB OP1dB 30.5dBm
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      LMT86LPG

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      Board Mount Temperature Sensors 2.2V-Capable, 10 uA Analog Output Temperature Sensor in SC70 and TO-92 3-TO-92 -50 to 150
      RN4871-I/RM130

      Mfr.#: RN4871-I/RM130

      OMO.#: OMO-RN4871-I-RM130-MICROCHIP-TECHNOLOGY

      BLUETOOTH BLE MODULE, SHIELDED,
      CP2112-F03-GM

      Mfr.#: CP2112-F03-GM

      OMO.#: OMO-CP2112-F03-GM-SILICON-LABS

      IC HID USB-TO-SMBUS BRIDGE 24QFN
      GRF5020

      Mfr.#: GRF5020

      OMO.#: OMO-GRF5020-1152

      RF Amplifier .01-6GHz Gain 17dB OP1dB 30.5dBm
      08051A331K4T2A

      Mfr.#: 08051A331K4T2A

      OMO.#: OMO-08051A331K4T2A-1190

      Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 330pF C0G 0805 10% AEC-Q200
      OPA189IDGKT

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      14MHZ, MUX-FRIENDLY, LOW-NOISE,
      可用性
      库存:
      72
      订购:
      2055
      输入数量:
      AS4C64M8D1-5BIN的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$5.15
      US$5.15
      10
      US$4.67
      US$46.70
      25
      US$4.57
      US$114.25
      50
      US$4.54
      US$227.00
      100
      US$4.07
      US$407.00
      250
      US$4.06
      US$1 015.00
      500
      US$3.91
      US$1 955.00
      1000
      US$3.55
      US$3 550.00
      2000
      US$3.38
      US$6 760.00
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