SLA5227

Mfr. #:: SLA5227
制造商:: Sanken
描述:: IGBT 600V 30A PFC
生命周期:: 制造商新产品。
数据表:: SLA5227 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SLA5227 Datasheet SLA5227 Datasheet (P4-P6)SLA5227 Datasheet (P7-P8)
ECAD Model:

产品属性
属性值

制造商: 三垦

产品分类: IGBT - 单

系列: -

打包: 管子

包装盒: 12-SIP, Exposed Tab

输入类型: 标准

安装型: 通孔

供应商-设备-包: 12-SIP

最大功率: -

反向恢复时间trr: -

电流收集器 Ic-Max: 30A

电压收集器发射极击穿最大值: 600V

IGBT型: -

电流收集器脉冲Icm: -

Vce-on-Max-Vge-Ic: -

开关能源: -

栅极电荷: -

Td-on-off-25°C: -

测试条件: -

Tags: SLA52, SLA5, SLA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SLA5227 描述

***roFlash: Integrated IGBT and Diode Bridge Rectifier

***S: new, original packaged

***i-Key: IGBT 600V 30A PFC

***ical: Trans IGBT Chip N-CH 600V 30A 30000mW 3-Pin(3+Tab) TO-220FP Tube

***icroelectronics: Trench gate field-stop IGBT, H series 600 V, 15 A high speed

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, 600V, 30A, 175DEG C, 30W; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 30W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins:

***p One Stop: Trans IGBT Chip N-CH 600V 30A 115000mW 3-Pin(3+Tab) TO-220 Tube

***icroelectronics: Trench gate field-stop IGBT, H series 600 V, 15 A high speed

***ure Electronics: STGP Series 600 V 30 A 24.5 ns t(on) Trench Gate Field-Stop IGBT - TO-220-3

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB

*** Source Electronics: Trans IGBT Chip N-CH 600V 30A 178000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 30A 178W TO220-3

*** Stop Electro: Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***rchild Semiconductor: Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as : sewing machine, CNC, motor control and home appliances.

***p One Stop Global: Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-220F Tube

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***rchild Semiconductor: Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as : sewing machine, CNC, motor control and home appliances.

***et: Trans IGBT Chip N-CH 600V 30A 3-Pin TO-251

***or: IGBT, 30A, 600V, N-CHANNEL

***el Nordic: Contact for details

***p One Stop Global: Trans IGBT Chip N-CH 600V 28A 100000mW 3-Pin(3+Tab) TO-220AB Tube

***essParts.Net: INTERNATIONAL RECTIFIER IRG4BC30KDPBF / IGBT W/DIODE 600V 28A TO220AB

***(Formerly Allied Electronics): IRG4BC30KDPBF, IGBT Transistor, 28 A 600 V, 3-Pin TO-220AB

***ure Electronics: IRG4BC30 Series 600 V 16 A N-Channel Ultra Fast IGBT - TO-220AB

***ernational Rectifier: 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package

***trelec: IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.7 V Current release time: 160 ns Power dissipation: 100 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:28A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:100W; Package/Case:TO-220AB ;RoHS Compliant: Yes

***nell: IGBT, TO-220; DC Collector Current: 28A; Collector Emitter Saturation Voltage Vce(on): 2.21V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating T

***ment14 APAC: IGBT, 600V, 28A, TO-220; Transistor Type:IGBT; DC Collector Current:28A; Collector Emitter Voltage Vces:2.21V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:28A; Current Temperature:25°C; Fall Time Max:120ns; Fall Time tf:120ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:58A; Rise Time:42ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Market price

型号	制造商	描述	库存	价格
SLA5227 DISTI # 30595193	Sanken Electric Co Ltd	0	179	50:$3.9907
SLA5227 DISTI # SLA5227-ND	Sanken Electric Co Ltd	IGBT 600V 30A PFC RoHS: Compliant Min Qty: 1 Container: Tube	70In Stock	36:$5.7686 18:$6.3317 1:$7.0400
SLA5227 DISTI # C1S721000057800	Sanken Electric Co Ltd	Integrated IGBT and Diode Bridge Rectifier RoHS: Compliant	179	50:$3.1300
SLA5227	Sanken Electric Co Ltd		141	138:$6.5175 33:$7.3075 1:$11.8500
SLA5227	Sanken Electric Co Ltd		226
SLA5227	Sanken Electric Co Ltd	RoHS(ship within 1day)	177	1:$5.9600 10:$5.0800 50:$4.4000 100:$4.2000 500:$4.0300 1000:$3.9500

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SLA5227

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes