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DMN2028USS-13

DMN2028USS-13
Mfr. #:
DMN2028USS-13
制造商:
Diodes Incorporated
描述:
MOSFET N-Ch FET VDSS 20V VGSS 20V ID 9.8A
生命周期:
制造商新产品。
数据表:
DMN2028USS-13 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMN2028USS-13 DatasheetDMN2028USS-13 Datasheet (P4-P6)DMN2028USS-13 Datasheet (P7)
ECAD Model:
更多信息:
DMN2028USS-13 更多信息
产品属性
属性值
制造商：
二极管公司
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
SO-8
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
20 V
Id - 连续漏极电流：
9.8 A
Rds On - 漏源电阻：
20 mOhms
Vgs - 栅源电压：
12 V
Qg - 门电荷：
11.6 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
1.56 W
配置：
单身的
频道模式：
增强
打包：
卷轴
系列：
DMN2028
晶体管类型：
1 N-Channel
类型：
N 沟道增强型 MOSFET
品牌：
二极管公司
正向跨导 - 最小值：
16 S
秋季时间：
12.33 ns
产品类别：
MOSFET
上升时间：
12.49 ns
出厂包装数量：
2500
子类别：
MOSFET
典型关断延迟时间：
35.89 ns
典型的开启延迟时间：
11.67 ns
单位重量：
0.002610 oz
Tags
DMN2028US, DMN2028, DMN202, DMN20, DMN2, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 20V 9.8A Automotive 8-Pin SO T/R
***ark
MOSFET,N CHANNEL,20V,7.3A,SO8; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:9.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
***nell
MOSFET,N CH,20V,9.8A,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.8A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 1.56W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 9.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 12V
***et
Trans MOSFET P-CH 20V 7.3A 8-Pin SOIC N T/R
***eco
P-CH MOSFET SO-8 20V 32MOHM @ 1.8V
***S
French Electronic Distributor since 1988
***Yang
Transistor MOSFET Array Dual N-CH 20V 8.9A 8-Pin SOIC T/R - Tape and Reel
***ure Electronics
Dual N-Channel 20 V 18.3 mOhm 4.9 nC HEXFET® Power Mosfet - SOIC-8
*** Stop Electro
Power Field-Effect Transistor, 8.9A I(D), N-Channel, Metal-oxide Semiconductor FET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:8.9A; On Resistance, Rds(on):18.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Dual N-Channel MOSFET
***nell
MOSFET, DUAL N-CH, 20V, 8.9A, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 8.9A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.0146ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 8.9 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 18.3 / Gate-Source Voltage V = 20 / Fall Time ns = 3.6 / Rise Time ns = 12 / Turn-OFF Delay Time ns = 7.1 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
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IRF8910PBF Dual N-channel MOSFET Transistor; 10 A; 20 V; 8-Pin SOIC
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Dual N-Channel 20 V 13.4 mOhm 7.4 nC HEXFET® Power Mosfet - SOIC-8
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Transistor MOSFET Array Dual N-CH 20V 10A 8-Pin SOIC Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:10A; On Resistance Rds(On):0.0107Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.55V Rohs Compliant: Yes
***et Europe
Transistor MOSFET Array Dual N-CH 20V 9.5A 8-Pin SOIC T/R
***ure Electronics
DMG6898LSD Series 20 V 9.5 A Dual N-Channel Enhancement Mode Mosfet - SO-8
***ical
Trans MOSFET N-CH 20V 9.5A Automotive 8-Pin SO T/R
***ark
Mosfet, Dual, N-Ch, 20V, 9.5A Rohs Compliant: Yes
***des Inc SCT
N-Channel Mosfet, 20V VDS, 12±V VGS
***ment14 APAC
MOSFET, DUAL, N-CH, 20V, 9.5A;
***ure Electronics
Si5459DU Series 20 V 8 A 0.052 Ohm P-Channel MOSFET - PowerPAK® ChipFET
***C
MOSFET 20V 8.0A 10.9W 52mohm @ 4.5V
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Trans MOSFET P-CH 20V 6.7A 8-Pin PowerPAK ChipFET T/R
***ment14 APAC
P CHANNEL MOSFET, -20V, 8A; Transistor P; P CHANNEL MOSFET, -20V, 8A; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.4V; No. of Pins:8
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P-channel 20 V, 0.0195 Ohm typ., 9 A STripFET H7 Power MOSFET in a SO-8 package
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STS9P2UH7: 20 V 0.018 Ohm 9 A P-Channel STripFET™ VII DeepGATE™ Power Mosfet
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20V 9A 2.7W 22.5m´Î@4.5V4.5A 1V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
Diodes Inc. DMNxx MOSFETs
Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.
型号 制造商 描述 库存 价格
DMN2028USS-13
DISTI # V72:2272_06698045		Zetex / Diodes IncTrans MOSFET N-CH 20V 9.8A Automotive 8-Pin SO T/R
RoHS: Compliant		2500
  • 1000:$0.2053
  • 500:$0.2653
  • 250:$0.2680
  • 100:$0.2708
  • 25:$0.4350
  • 10:$0.4396
  • 1:$0.5305
DMN2028USS-13
DISTI # DMN2028USS-13DICT-ND		Diodes IncorporatedMOSFET N-CH 20V 7.3A 8SO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2470In Stock
  • 1000:$0.2772
  • 500:$0.3508
  • 100:$0.4687
  • 10:$0.6160
  • 1:$0.7300
DMN2028USS-13
DISTI # DMN2028USS-13DIDKR-ND		Diodes IncorporatedMOSFET N-CH 20V 7.3A 8SO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2470In Stock
  • 1000:$0.2772
  • 500:$0.3508
  • 100:$0.4687
  • 10:$0.6160
  • 1:$0.7300
DMN2028USS-13
DISTI # DMN2028USS-13DITR-ND		Diodes IncorporatedMOSFET N-CH 20V 7.3A 8SO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.2477
DMN2028USS-13
DISTI # 26571865		Zetex / Diodes IncTrans MOSFET N-CH 20V 9.8A Automotive 8-Pin SO T/R
RoHS: Compliant		7500
  • 2500:$0.1625
DMN2028USS-13
DISTI # 30737740		Zetex / Diodes IncTrans MOSFET N-CH 20V 9.8A Automotive 8-Pin SO T/R
RoHS: Compliant		2500
  • 1000:$0.2053
  • 500:$0.2653
  • 250:$0.2680
  • 100:$0.2708
  • 39:$0.4350
DMN2028USS-13
DISTI # DMN2028USS-13		Diodes IncorporatedTrans MOSFET N-CH 20V 9.8A 8-Pin SO T/R - Tape and Reel (Alt: DMN2028USS-13)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.1899
  • 5000:$0.1799
  • 10000:$0.1719
  • 15000:$0.1639
  • 25000:$0.1599
DMN2028USS-13
DISTI # DMN2028USS-13		Diodes IncorporatedTrans MOSFET N-CH 20V 9.8A 8-Pin SO T/R (Alt: DMN2028USS-13)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.1629
  • 5000:€0.1619
  • 10000:€0.1619
  • 15000:€0.1619
  • 25000:€0.1609
DMN2028USS-13
DISTI # 27T2699		Diodes IncorporatedMOSFET,N CHANNEL,20V,7.3A,SO8,Transistor Polarity:N Channel,Continuous Drain Current Id:9.8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.011ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:8Pins RoHS Compliant: Yes9868
  • 1:$0.5700
  • 10:$0.4700
  • 25:$0.4090
  • 50:$0.3480
  • 100:$0.2870
  • 250:$0.2650
  • 500:$0.2440
  • 1000:$0.2220
DMN2028USS-13
DISTI # 70550765		Diodes Incorporated20V N-Channel Enhancement MOSFET SOIC8
RoHS: Compliant		0
  • 100:$0.3600
  • 300:$0.3200
  • 1200:$0.2800
  • 2500:$0.2600
DMN2028USS-13
DISTI # 522-DMN2028USS-13		Diodes IncorporatedMOSFET N-Ch FET VDSS 20V VGSS 20V ID 9.8A
RoHS: Compliant		2471
  • 1:$0.5700
  • 10:$0.4700
  • 100:$0.2870
  • 1000:$0.2220
  • 2500:$0.1890
DMN2028USS-13
DISTI # DMN2028USS-13		Diodes IncorporatedTransistor: N-MOSFET,unipolar,20V,7.3A,12.5W,SO82311
  • 1:$0.5500
  • 5:$0.2800
  • 25:$0.2300
  • 100:$0.2000
  • 500:$0.1900
DMN2028USS-13
DISTI # C1S205700141381		Diodes IncorporatedTrans MOSFET N-CH 20V 9.8A Automotive 8-Pin SO T/R
RoHS: Compliant		2500
  • 250:$0.2680
  • 100:$0.2708
  • 25:$0.4350
  • 10:$0.4396
DMN2028USS-13
DISTI # C1S205700122678		Diodes IncorporatedTrans MOSFET N-CH 20V 9.8A Automotive 8-Pin SO T/R
RoHS: Compliant		2500
  • 2500:$0.2390
DMN2028USS-13
DISTI # 1863719		Diodes IncorporatedMOSFET,N CH,20V,9.8A,SO8
RoHS: Compliant		12488
  • 5:£0.4230
  • 25:£0.3970
  • 100:£0.2280
  • 250:£0.2020
  • 500:£0.1760
DMN2028USS-13
DISTI # 1863719		Diodes IncorporatedMOSFET,N CH,20V,9.8A,SO8
RoHS: Compliant		9868
  • 1:$0.9020
  • 10:$0.7440
  • 100:$0.4550
  • 1000:$0.3520
  • 2500:$0.3000
  • 10000:$0.2790
  • 25000:$0.2650
  • 50000:$0.2610
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 Common Mode Chokes / Filters 8900ohms 1.3ohms 400mA
可用性
库存:
Available
订购:
1986
输入数量:
DMN2028USS-13的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$0.56
US$0.56
10
US$0.47
US$4.70
100
US$0.29
US$28.70
1000
US$0.22
US$222.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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