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FPF2G120BF07AS

FPF2G120BF07AS
Mfr. #:
FPF2G120BF07AS
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Modules High Power Module
生命周期:
制造商新产品。
数据表:
FPF2G120BF07AS 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FPF2G120BF07AS 更多信息
产品属性
属性值
制造商：
安森美半导体
产品分类：
IGBT 模块
RoHS：
Y
产品：
IGBT 硅模块
配置：
三倍
集电极-发射极电压 VCEO 最大值：
650 V
集电极-发射极饱和电压：
1.55 V
25 C 时的连续集电极电流：
40 A
栅极-发射极漏电流：
2 uA
Pd - 功耗：
98 W, 140 W, 156 W
包装/案例：
F2
最低工作温度：
- 40 C
最高工作温度：
+ 150 C
打包：
托盘
系列：
FPF2G120BF07AS
品牌：
安森美半导体/飞兆半导体
安装方式：
贴片/贴片
最大栅极发射极电压：
20 V
产品类别：
IGBT 模块
出厂包装数量：
70
子类别：
IGBT
单位重量：
1.587328 oz
Tags
FPF2G, FPF2, FPF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power Integrated Module (PIM), F2, SiC Diode + IGBT, 650 V, 40 A
***ical
Trans IGBT Module N=-CH 650V 40A 156000mW 17-Pin Case F2 Tray
***ark
HPM(High Power Module) - HPM F2 PKG, 32LD, SOLDERING TERMINAL, 3CH BOOST MODULE
***rchild Semiconductor
The FPF2G120BF07AS is the 3ch boost topology which is providing an optimized solution for the multi-string solar application.And the integrated high speed field stop IGBTs and SiC diodes are providing lower conduction and switching losses. Furthermore, the screw clamp provides a fast and reliable mounting method.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
SiC Diodes and IGBT Power Integrated Modules
ON Semiconductor Silicon Carbide (SiC) Diodes and IGBT Power Integrated Modules (PIM) provide lower conduction and switching losses. These integrated high-speed field stop IGBT and SiC diodes feature built-in Negative Temperature Co-efficient (NTC) for temperature monitoring. The SiC diodes and IGBT PIMs are optimized for solar inverters, UPS, or power stages that need a more compact design.
FPF2G120BF07AS 3-Channel Boost Module
ON Semiconductor FPF2G120BF07AS 3-Channel Boost Module provides an optimized solution for the multi-string solar application. The integrated high speed field stop IGBTs and SiC diodes provide lower conduction and switching losses. And, the screw clamp provides a fast and reliable mounting method.Learn More
型号 制造商 描述 库存 价格
FPF2G120BF07AS
DISTI # V99:2348_14141233		ON SemiconductorTrans IGBT Module N-CH 650V 40A 156000mW 17-Pin Case F2 Tray70
  • 100:$93.6600
  • 25:$98.4599
  • 10:$101.4599
  • 5:$104.1600
  • 1:$105.2000
FPF2G120BF07ASP
DISTI # V99:2348_14141234		ON SemiconductorHPM(HIGH POWER MODULE)70
  • 25:$102.0699
  • 10:$105.1900
  • 5:$108.7000
  • 1:$109.0800
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP-ND		ON SemiconductorIC LOAD SWITCH
RoHS: Compliant
Min Qty: 1
Container: Tray		70In Stock
  • 10:$103.6350
  • 1:$109.2800
FPF2G120BF07AS
DISTI # FPF2G120BF07AS-ND		ON SemiconductorIC LOAD SWITCH
RoHS: Compliant
Min Qty: 1
Container: Tray		65In Stock
  • 10:$99.9600
  • 1:$105.4000
FPF2G120BF07AS
DISTI # 25887478		ON SemiconductorTrans IGBT Module N-CH 650V 40A 156000mW 17-Pin Case F2 Tray70
  • 1:$105.2000
FPF2G120BF07ASP
DISTI # 31085825		ON SemiconductorHPM(HIGH POWER MODULE)70
  • 1:$109.0800
FPF2G120BF07AS
DISTI # FPF2G120BF07AS		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 (Alt: FPF2G120BF07AS)
RoHS: Compliant
Min Qty: 1
Container: Case		Europe - 0
  • 1000:€78.7900
  • 500:€79.2900
  • 100:€79.8900
  • 50:€80.3900
  • 25:€80.9900
  • 10:€81.4900
  • 1:€82.0900
FPF2G120BF07AS
DISTI # FPF2G120BF07AS		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 - Bulk (Alt: FPF2G120BF07AS)
Min Qty: 4
Container: Bulk		Americas - 0
  • 40:$93.1900
  • 20:$95.5900
  • 12:$96.7900
  • 8:$98.0900
  • 4:$98.6900
FPF2G120BF07AS
DISTI # FPF2G120BF07AS		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 - Trays (Alt: FPF2G120BF07AS)
RoHS: Compliant
Min Qty: 70
Container: Tray		Americas - 0
  • 700:$81.8900
  • 420:$83.8900
  • 280:$85.9900
  • 140:$88.2900
  • 70:$89.3900
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 - Trays (Alt: FPF2G120BF07ASP)
RoHS: Compliant
Min Qty: 70
Container: Tray		Americas - 0
  • 700:$84.8900
  • 420:$86.9900
  • 280:$89.1900
  • 140:$91.4900
  • 70:$92.6900
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 (Alt: FPF2G120BF07ASP)
RoHS: Compliant
Min Qty: 1
Container: Case		Europe - 0
  • 1000:€81.6900
  • 500:€82.1900
  • 100:€82.7900
  • 50:€83.3900
  • 25:€83.8900
  • 10:€84.4900
  • 1:€85.0900
FPF2G120BF07AS
DISTI # 512-FPF2G120BF07AS		ON SemiconductorIGBT Modules High Power Module
RoHS: Compliant		11
  • 1:$108.8000
  • 5:$106.8100
  • 10:$102.0000
FPF2G120BF07ASP
DISTI # 512-FPF2G120BF07ASP		ON SemiconductorIGBT Modules High Power Module
RoHS: Compliant		70
  • 1:$112.8000
  • 5:$110.7300
  • 10:$105.7500
  • 25:$102.2200
FPF2G120BF07ASFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor
RoHS: Compliant		140
  • 1000:$99.4200
  • 500:$104.6500
  • 100:$108.9600
  • 25:$113.6200
  • 1:$122.3600
图片 型号 描述
FPF2G120BF07ASP

Mfr.#: FPF2G120BF07ASP

OMO.#: OMO-FPF2G120BF07ASP

 IGBT Modules High Power Module
FPF2G120BF07AS

Mfr.#: FPF2G120BF07AS

OMO.#: OMO-FPF2G120BF07AS

 IGBT Modules High Power Module
FPF2G120BF07AS

Mfr.#: FPF2G120BF07AS

OMO.#: OMO-FPF2G120BF07AS-ON-SEMICONDUCTOR

 IC LOAD SWITCH
FPF2G120BF07ASP

Mfr.#: FPF2G120BF07ASP

OMO.#: OMO-FPF2G120BF07ASP-ON-SEMICONDUCTOR

 IC LOAD SWITCH
可用性
库存:
11
订购:
1994
输入数量:
FPF2G120BF07AS的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$108.80
US$108.80
5
US$106.81
US$534.05
10
US$102.00
US$1 020.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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