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SI4430BDY-T1-GE3

SI4430BDY-T1-GE3
Mfr. #:
SI4430BDY-T1-GE3
制造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 30V 20A 3.0W 4.5mohm @ 10V
生命周期:
制造商新产品。
数据表:
SI4430BDY-T1-GE3 数据表
交货:
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支付:
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ECAD Model:
更多信息:
SI4430BDY-T1-GE3 更多信息
产品属性
属性值
Tags
SI4430BDY-T, SI4430BDY, SI4430B, SI4430, SI443, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.006 Ohm 36 nC 1.6 W Silicon SMT Mosfet - SOIC-8
***ical
Trans MOSFET N-CH Si 30V 14A 8-Pin SOIC N T/R
***nell
N CHANNEL MOSFET, 30V, 20A, SOIC
***ment14 APAC
N CHANNEL MOSFET, 30V, 20A, SOIC; Transi; N CHANNEL MOSFET, 30V, 20A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型号 制造商 描述 库存 价格
SI4430BDY-T1-GE3
DISTI # SI4430BDY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 14A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1440In Stock
  • 1000:$0.8086
  • 500:$0.9759
  • 100:$1.2548
  • 10:$1.5610
  • 1:$1.7300
SI4430BDY-T1-GE3
DISTI # SI4430BDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 14A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1440In Stock
  • 1000:$0.8086
  • 500:$0.9759
  • 100:$1.2548
  • 10:$1.5610
  • 1:$1.7300
SI4430BDY-T1-GE3
DISTI # SI4430BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 14A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.7580
SI4430BDY-T1-GE3
DISTI # SI4430BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 14A 8-Pin SOIC N T/R (Alt: SI4430BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4430BDY-T1-GE3
    DISTI # SI4430BDY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 14A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4430BDY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.7419
    • 5000:$0.7399
    • 10000:$0.7379
    • 15000:$0.7369
    • 25000:$0.7349
    SI4430BDY-T1-GE3
    DISTI # 84W7286    		Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 0.0037OHM, 14A, SOIC-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins, RoHS Compliant: Yes0
    • 1:$0.8910
    • 2500:$0.8840
    • 5000:$0.8580
    • 10000:$0.8260
    SI4430BDY-T1-GE3
    DISTI # 16P3737    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 20A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,Product Range:- , RoHS Compliant: Yes0
    • 1:$1.9500
    • 10:$1.6200
    • 25:$1.5000
    • 50:$1.3800
    • 100:$1.2600
    • 250:$1.1800
    • 500:$1.1000
    SI4430BDY-T1-GE3
    DISTI # 781-SI4430BDY-T1-GE3    		Vishay IntertechnologiesMOSFET 30V 20A 3.0W 4.5mohm @ 10V
    RoHS: Compliant    		2420
    • 1:$1.9500
    • 10:$1.6200
    • 100:$1.2600
    • 500:$1.1000
    • 1000:$0.9080
    • 2500:$0.8450
    • 5000:$0.8140
    SI4430BDY-T1-GE3
    DISTI # 1771925    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 20A, SOIC
    RoHS: Compliant    		0
    • 1:$2.7500
    • 10:$2.4700
    • 100:$1.9900
    • 500:$1.5500
    • 1000:$1.2800
    SI4430BDY-T1-GE3
    DISTI # 1771925    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 20A, SOIC
    RoHS: Compliant    		0
    • 2500:£0.9660
    图片 型号 描述
    SI4430BDY-T1-GE3

    Mfr.#: SI4430BDY-T1-GE3

    OMO.#: OMO-SI4430BDY-T1-GE3

    		 MOSFET 30V 20A 3.0W 4.5mohm @ 10V
    SI4430BDY-T1-E3

    Mfr.#: SI4430BDY-T1-E3

    OMO.#: OMO-SI4430BDY-T1-E3

    		 MOSFET 30V 20A 0.0045Ohm
    SI4430BDY-T1-GE3

    Mfr.#: SI4430BDY-T1-GE3

    OMO.#: OMO-SI4430BDY-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 30V 20A 3.0W 4.5mohm @ 10V
    SI4430BDY-T1-E3-CUT TAPE

    Mfr.#: SI4430BDY-T1-E3-CUT TAPE

    OMO.#: OMO-SI4430BDY-T1-E3-CUT-TAPE-1190

    		 全新原装
    SI4430BD

    Mfr.#: SI4430BD

    OMO.#: OMO-SI4430BD-1190

    		 全新原装
    SI4430BDY

    Mfr.#: SI4430BDY

    OMO.#: OMO-SI4430BDY-1190

    		 全新原装
    SI4430BDY-T1-E3

    Mfr.#: SI4430BDY-T1-E3

    OMO.#: OMO-SI4430BDY-T1-E3-VISHAY

    		 MOSFET N-CH 30V 14A 8-SOIC
    SI4430BDY-T1-E3-S

    Mfr.#: SI4430BDY-T1-E3-S

    OMO.#: OMO-SI4430BDY-T1-E3-S-1190

    		 全新原装
    SI4430BDY-T1-E3.

    Mfr.#: SI4430BDY-T1-E3.

    OMO.#: OMO-SI4430BDY-T1-E3--1190

    		 N-CHANNEL 30-V MOSFET ROHS COMPLIANT: YES
    可用性
    库存:
    Available
    订购:
    2500
    输入数量:
    SI4430BDY-T1-GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$1.03
    US$1.03
    10
    US$0.98
    US$9.82
    100
    US$0.93
    US$93.03
    500
    US$0.88
    US$439.30
    1000
    US$0.83
    US$826.90
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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