F3L300R12ME4_B23

Mfr. #:: F3L300R12ME4_B23
制造商:: Infineon Technologies
描述:: IGBT Modules IGBT Module 300A 1200V
生命周期:: 制造商新产品。
数据表:: F3L300R12ME4_B23 数据表
交货:: DHL FedEx Ups TNT EMS
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产品属性
属性值

制造商：: 英飞凌

产品分类：: IGBT 模块

RoHS：: Y

打包：: 托盘

品牌：: 英飞凌科技

产品类别：: IGBT 模块

出厂包装数量：: 10

子类别：: IGBT

第 # 部分别名：: F3L300R12ME4B23BOSA1 SP000931258

Tags: F3L300R12ME4_B, F3L300R12ME, F3L300R12M, F3L300R1, F3L300, F3L3, F3L

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

F3L300R12ME4_B23 描述

***et Europe: EconoDUAL 3 Module with Trench/Fieldstop IGBT 4 and Emitter Controlled HE diode/NTC

***ronik: IGBT 1200V 300A EconoDUAL3

***omponent: Infineon power module

***i-Key: IGBT MODULE VCES 650V 300A

***et: MEDIUM POWER ECONO

***ineon: EconoDUAL 3 1200V 3-level phase leg IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode and NTC1 lower switch. | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); Unbeatable Robustness; T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups; welding

Market price

型号	制造商	描述	库存	价格
F3L300R12ME4B23BOSA1 DISTI # F3L300R12ME4B23BOSA1-ND	Infineon Technologies AG	IGBT MODULE VCES 650V 300A RoHS: Not compliant Min Qty: 10 Container: Bulk	Temporarily Out of Stock	10:$174.0550
F3L300R12ME4_B23 DISTI # SP000931258	Infineon Technologies AG	EconoDUAL 3 Module with Trench/Fieldstop IGBT 4 and Emitter Controlled HE diode/NTC (Alt: SP000931258) RoHS: Compliant Min Qty: 1	Europe - 0	1:€227.2900 10:€183.6900 25:€166.9900 50:€161.2900 100:€155.9900 500:€151.4900 1000:€148.0900
F3L300R12ME4B23BOSA1 DISTI # F3L300R12ME4B23BOSA1	Infineon Technologies AG	MEDIUM POWER ECONO - Trays (Alt: F3L300R12ME4B23BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	10:$180.6900 20:$174.1900 40:$167.8900 60:$162.2900 100:$159.3900
F3L300R12ME4_B23 DISTI # 641-F3L300R12ME4_B23	Infineon Technologies AG	IGBT Modules IGBT Module 300A 1200V RoHS: Compliant	8	1:$181.9300 5:$177.5500 10:$173.1400 25:$170.7200
F3L300R12ME4_B23	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	310	1000:$151.4700 500:$159.4500 100:$166.0000 25:$173.1100 1:$186.4300
F3L300R12ME4B23BOSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	40	1000:$138.8400 500:$146.1500 100:$152.1600 25:$158.6800 1:$170.8800

F3L300R12ME4_B23

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes